RESUMO
Materials with a zero refractive index support electromagnetic modes that exhibit stationary phase profiles. While such materials have been realized across the visible and near-infrared spectral range, radiative and dissipative optical losses have hindered their development. We reduce losses in zero-index, on-chip photonic crystals by introducing high-Q resonances via resonance-trapped and symmetry-protected states. Using these approaches, we experimentally obtain quality factors of 2.6 × 103 and 7.8 × 103 at near-infrared wavelengths, corresponding to an order-of-magnitude reduction in propagation loss over previous designs. Our work presents a viable approach to fabricate zero-index on-chip nanophotonic devices with low-loss.
RESUMO
We demonstrate a photonic analog of twisted bilayer graphene that has ultra-flat photonic bands and exhibits extreme slow-light behavior. Our twisted bilayer photonic device, which has an operating wavelength in the C-band of the telecom window, uses two crystalline silicon photonic crystal slabs separated by a methyl methacrylate tunneling layer. We numerically determine the magic angle using a finite-element method and the corresponding photonic band structure, which exhibits a flat band over the entire Brillouin zone. This flat band causes the group velocity to approach zero and introduces light localization, which enhances the electromagnetic field at the expense of bandwidth. Using our original plane-wave continuum model, we find that the photonic system has a larger band asymmetry. The band structure can easily be engineered by adjusting the device geometry, giving significant freedom in the design of devices. Our work provides a fundamental understanding of the photonic properties of twisted bilayer photonic crystals and opens the door to the nanoscale-based enhancement of nonlinear effects.