RESUMO
Polarization-insensitive silicon nitride (SiN) 4-channel wavelength (de)multiplexers based on Mach-Zehnder interferometer lattice filters for coarse wavelength division multiplexing (CWDM) in the O-band are demonstrated in a SiN-on-silicon photonic platform. For the best-performing device, the insertion loss was < 2.8 dB, the inter-channel crosstalk was < -11.5 dB for a polarization scrambled input, and the passband shift between the orthogonal polarizations was < 1.5 nm. Across the 200mm wafer, the die-averaged insertion loss and maximum crosstalk were 3.1 dB and -10.6 dB, respectively. The higher-than-expected crosstalk was due to dimensional variations. This work shows the potential of SiN photonic circuits for CWDM without polarization diversity.
RESUMO
We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.
RESUMO
We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W(-1)m(-1). We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm(2)) over timescales of at least an hour.