Detalhe da pesquisa
1.
Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes.
Opt Express
; 30(12): 21065-21074, 2022 Jun 06.
Artigo
Inglês
| MEDLINE | ID: mdl-36224835
2.
Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer.
Materials (Basel)
; 17(1)2023 Dec 28.
Artigo
Inglês
| MEDLINE | ID: mdl-38204021
3.
Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis.
Sci Rep
; 10(1): 17433, 2020 Oct 15.
Artigo
Inglês
| MEDLINE | ID: mdl-33060771