Understanding the Role of Surface Charge on Nanobubble Capillary Bridging during Particle-Particle Interaction.

The interactions between particles due to long-range hydrophobic forces have been extensively investigated. The hydrophobic force is likely a capillary force that arises from the formation of capillary bridges due to the merging of nanobubbles. In this study, we aim to investigate the impact of the nanobubble surface charge on the capillary bridge and, subsequently, the interaction between particles. The surface charge of the nanobubbles was altered in the presence of various surfactants (cationic, anionic, and nonionic) and salts (mono-, di-, and trivalent). The particle-particle interaction was quantified by measuring the aggregate size of the hydrophobized glass particles. Both experimental and theoretical findings confirm that the interaction between particles was enhanced when the surface potential of the nanobubble was around the neutral regime. This is probably because, when the surface potential was close to neutral, the interaction between two surface-deposited nanobubbles dominated over electrostatic repulsion, which was more conducive to the formation of the nanobubble capillary bridge. The estimation of the constrained Gibbs potential also showed the capillary bridge to be more stable when surface charge density along the bridge gas-liquid interface was minimal.

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip.

The computing demands of future data-intensive applications will greatly exceed the capabilities of current electronics, and are unlikely to be met by isolated improvements in transistors, data storage technologies or integrated circuit architectures alone. Instead, transformative nanosystems, which use new nanotechnologies to simultaneously realize improved devices and new integrated circuit architectures, are required. Here we present a prototype of such a transformative nanosystem. It consists of more than one million resistive random-access memory cells and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies for use in energy-efficient digital logic circuits and for dense data storage-fabricated on vertically stacked layers in a single chip. Unlike conventional integrated circuit architectures, the layered fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and dense vertical connectivity between layers of computing, data storage, and input and output (in this instance, sensing). As a result, our nanosystem can capture massive amounts of data every second, store it directly on-chip, perform in situ processing of the captured data, and produce 'highly processed' information. As a working prototype, our nanosystem senses and classifies ambient gases. Furthermore, because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible with existing infrastructure for silicon-based technologies. Such complex nano-electronic systems will be essential for future high-performance and highly energy-efficient electronic systems.

Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.

Carbon nanotube field-effect transistors (CNFETs) promise to improve the energy efficiency, speed, and transistor density of very large scale integration circuits owing to the intrinsic thin channel body and excellent charge transport properties of carbon nanotubes. Low-temperature fabrication (e.g., <400 °C) is a key enabler for the monolithic three-dimensional (3D) integration of CNFET digital logic into a device technology platform that overcomes memory bandwidth bottlenecks for data-abundant applications such as big-data analytics and machine learning. However, high contact resistance for short CNFET contacts has been a major roadblock to establishing CNFETs as a viable technology because the contact resistance, in series with the channel resistance, reduces the on-state current of CNFETs. Additionally, the variation in contact resistance remains unstudied for short contacts and will further degrade the energy efficiency and speed of CNFET circuits. In this work, we investigate by experiments the contact resistance and statistical variation of room-temperature fabricated CNFET contacts down to 10 nm contact lengths. These CNFET contacts are ∼15 nm shorter than the state-of-the-art Si CMOS "7 nm node" contact length, allowing for multiple generations of future scaling of the transistor-contacted gate pitch. For the 10 nm contacts, we report contact resistance values down to 6.5 kΩ per source/drain contact for a single carbon nanotube (CNT) with a median contact resistance of 18.2 kΩ. The 10 nm contacts reduce the CNFET current by as little as 13% at VDS = 0.7 V compared with the best reported 200 nm contacts to date, corroborated by results in this work. Our analysis of RC from 232 single-CNT CNFETs between the long-contact (e.g., 200 nm) and short-contact (e.g., 10 nm) regimes quantifies the resistance variation and projects the impact on CNFET current variability versus the number of CNT in the transistor. The resistance distribution reveals contact-length-dependent RC variations become significant below 20 nm contact length. However, a larger source of CNFET resistance variation is apparent at all contact lengths used in this work. To further investigate the origins of this contact-length-independent resistance variation, we analyze the variation of RC in arrays of identical CNFETs along a single CNT of constant diameter and observe the random occurrence of high  RC, even on correlated CNFETs.

Carbon nanotube computer.

The miniaturization of electronic devices has been the principal driving force behind the semiconductor industry, and has brought about major improvements in computational power and energy efficiency. Although advances with silicon-based electronics continue to be made, alternative technologies are being explored. Digital circuits based on transistors fabricated from carbon nanotubes (CNTs) have the potential to outperform silicon by improving the energy-delay product, a metric of energy efficiency, by more than an order of magnitude. Hence, CNTs are an exciting complement to existing semiconductor technologies. Owing to substantial fundamental imperfections inherent in CNTs, however, only very basic circuit blocks have been demonstrated. Here we show how these imperfections can be overcome, and demonstrate the first computer built entirely using CNT-based transistors. The CNT computer runs an operating system that is capable of multitasking: as a demonstration, we perform counting and integer-sorting simultaneously. In addition, we implement 20 different instructions from the commercial MIPS instruction set to demonstrate the generality of our CNT computer. This experimental demonstration is the most complex carbon-based electronic system yet realized. It is a considerable advance because CNTs are prominent among a variety of emerging technologies that are being considered for the next generation of highly energy-efficient electronic systems.

Activation of ganglion cells and axon bundles using epiretinal electrical stimulation.

Epiretinal prostheses for treating blindness activate axon bundles, causing large, arc-shaped visual percepts that limit the quality of artificial vision. Improving the function of epiretinal prostheses therefore requires understanding and avoiding axon bundle activation. This study introduces a method to detect axon bundle activation on the basis of its electrical signature and uses the method to test whether epiretinal stimulation can directly elicit spikes in individual retinal ganglion cells without activating nearby axon bundles. Combined electrical stimulation and recording from isolated primate retina were performed using a custom multielectrode system (512 electrodes, 10-µm diameter, 60-µm pitch). Axon bundle signals were identified by their bidirectional propagation, speed, and increasing amplitude as a function of stimulation current. The threshold for bundle activation varied across electrodes and retinas, and was in the same range as the threshold for activating retinal ganglion cells near their somas. In the peripheral retina, 45% of electrodes that activated individual ganglion cells (17% of all electrodes) did so without activating bundles. This permitted selective activation of 21% of recorded ganglion cells (7% of expected ganglion cells) over the array. In one recording in the central retina, 75% of electrodes that activated individual ganglion cells (16% of all electrodes) did so without activating bundles. The ability to selectively activate a subset of retinal ganglion cells without axon bundles suggests a possible novel architecture for future epiretinal prostheses.NEW & NOTEWORTHY Large-scale multielectrode recording and stimulation were used to test how selectively retinal ganglion cells can be electrically activated without activating axon bundles. A novel method was developed to identify axon activation on the basis of its unique electrical signature and was used to find that a subset of ganglion cells can be activated at single-cell, single-spike resolution without producing bundle activity in peripheral and central retina. These findings have implications for the development of advanced retinal prostheses.

Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors.

Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state leakage due to the small effective mass and band gap. The lower limit of off-current (IMIN) was measured in electrostatically doped CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) across a range of band gaps (0.37 to 1.19 eV), supply voltages (0.5 to 0.7 V), and extension doping levels (0.2 to 0.8 carriers/nm). A nonequilibrium Green's function (NEGF) model confirms the dependence of IMIN on CNT band gap, supply voltage, and extension doping level. A leakage current design space across CNT band gap, supply voltage, and extension doping is projected based on the validated NEGF model for long-channel CNT MOSFETs to identify the appropriate device design choices. The optimal extension doping and CNT band gap design choice for a target off-current density are identified by including on-current projection in the leakage current design space. An extension doping level >0.5 carrier/nm is required for optimized on-current.

Linear increases in carbon nanotube density through multiple transfer technique.

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. We perform multiple transfers, whereby we transfer CNTs from several growth wafers onto the same target surface, thereby linearly increasing CNT density on the target substrate. This process, called transfer of nanotubes through multiple sacrificial layers, is highly scalable, and we demonstrate linear CNT density scaling up to 5 transfers. We also demonstrate that this linear CNT density increase results in an ideal linear increase in drain-source currents of carbon nanotube field effect transistors (CNFETs). Experimental results demonstrate that CNT density can be improved from 2 to 8 CNTs/µm, accompanied by an increase in drain-source CNFET current from 4.3 to 17.4 µA/µm.

The effect of amine protonation on the electrical properties of spin-assembled single-walled carbon nanotube networks.

Amine-terminated self-assembled monolayers (SAMs) have been shown to selectively adsorb semiconducting single-walled carbon nanotubes (sc-SWNTs). Previous studies have shown that when deposited by spin coating, the resulting nanotube networks (SWNTnts) can be strongly influenced by the charge state of the amine (primary, secondary, and tertiary). When the amine surfaces were exposed to varying pH solutions, the conductivity and overall quality of the resulting fabricated networks were altered. Atomic force microscopy (AFM) topography had shown that the density of the SWNTnts was reduced as the amine protonation decreased, indicating that the electrostatic attraction between the SWNTs in solution and the surface influenced the adsorption. Simultaneously, µ-Raman analysis had suggested that when exposed to more basic conditions, the resulting networks were enhanced with sc-SWNTs. To directly confirm this enhancement, Ti/Pd contacts were deposited and devices were tested in air. Key device characteristics were found to match the enhancement trends previously observed by spectroscopy. For the primary and secondary amines, on/off current ratios were commensurate with the Raman trends in metallic contribution, while no trends were observed on the tertiary amine (due to weaker interactions). Finally, differing SWNT solution volumes were used to compensate for adsorption differences and yielded identical SWNTnt densities on the various pH-treated samples to eliminate the influence of network density. These results further the understanding of the amine-SWNT interaction during the spin coating process. Overall, we provide a convenient route to provide SWNT-based TFTs with highly tunable electronic charge transport through better understanding of the influence of these specific interactions.

Spatially patterned bi-electrode epiretinal stimulation for axon avoidance at cellular resolution.

Objective.Epiretinal prostheses are designed to restore vision to people blinded by photoreceptor degenerative diseases by stimulating surviving retinal ganglion cells (RGCs), which carry visual signals to the brain. However, inadvertent stimulation of RGCs at their axons can result in non-focal visual percepts, limiting the quality of artificial vision. Theoretical work has suggested that axon activation can be avoided with current stimulation designed to minimize the second spatial derivative of the induced extracellular voltage along the axon. However, this approach has not been verified experimentally at the resolution of single cells.Approach.In this work, a custom multi-electrode array (512 electrodes, 10µm diameter, 60µm pitch) was used to stimulate and record RGCs in macaque retinaex vivoat single-cell, single-spike resolution. RGC activation thresholds resulting from bi-electrode stimulation, which consisted of bipolar currents simultaneously delivered through two electrodes straddling an axon, were compared to activation thresholds from traditional single-electrode stimulation.Main results.On average, across three retinal preparations, the bi-electrode stimulation strategy reduced somatic activation thresholds (∼21%) while increasing axonal activation thresholds (∼14%), thus favoring selective somatic activation. Furthermore, individual examples revealed rescued selective activation of somas that was not possible with any individual electrode.Significance.This work suggests that a bi-electrode epiretinal stimulation strategy can reduce inadvertent axonal activation at cellular resolution, for high-fidelity artificial vision.

Automatic Identification of Axon Bundle Activation for Epiretinal Prosthesis.

OBJECTIVE: Retinal prostheses must be able to activate cells in a selective way in order to restore high-fidelity vision. However, inadvertent activation of far-away retinal ganglion cells (RGCs) through electrical stimulation of axon bundles can produce irregular and poorly controlled percepts, limiting artificial vision. In this work, we aim to provide an algorithmic solution to the problem of detecting axon bundle activation with a bi-directional epiretinal prostheses. METHODS: The algorithm utilizes electrical recordings to determine the stimulation current amplitudes above which axon bundle activation occurs. Bundle activation is defined as the axonal stimulation of RGCs with unknown soma and receptive field locations, typically beyond the electrode array. The method exploits spatiotemporal characteristics of electrically-evoked spikes to overcome the challenge of detecting small axonal spikes. RESULTS: The algorithm was validated using large-scale, single-electrode and short pulse, ex vivo stimulation and recording experiments in macaque retina, by comparing algorithmically and manually identified bundle activation thresholds. For 88% of the electrodes analyzed, the threshold identified by the algorithm was within ±10% of the manually identified threshold, with a correlation coefficient of 0.95. CONCLUSION: This works presents a simple, accurate and efficient algorithm to detect axon bundle activation in epiretinal prostheses. SIGNIFICANCE: The algorithm could be used in a closed-loop manner by a future epiretinal prosthesis to reduce poorly controlled visual percepts associated with bundle activation. Activation of distant cells via axonal stimulation will likely occur in other types of retinal implants and cortical implants, and the method may therefore be broadly applicable.

A Data-Compressive Wired-OR Readout for Massively Parallel Neural Recording.

Neural interfaces of the future will be used to help restore lost sensory, motor, and other capabilities. However, realizing this futuristic promise requires a major leap forward in how electronic devices interface with the nervous system. Next generation neural interfaces must support parallel recording from tens of thousands of electrodes within the form factor and power budget of a fully implanted device, posing a number of significant engineering challenges. In this paper, we exploit sparsity and diversity of neural signals to achieve simultaneous data compression and channel multiplexing for neural recordings. The architecture uses wired-OR interactions within an array of single-slope A/D converters to obtain massively parallel digitization of neural action potentials. The achieved compression is lossy but effective at retaining the critical samples belonging to action potentials, enabling efficient spike sorting and cell type identification. Simulation results of the architecture using data obtained from primate retina ex-vivo with a 512-channel electrode array show average compression rates up to  âˆ¼ 40× while missing less than 5% of cells. In principle, the techniques presented here could be used to design interfaces to other parts of the nervous system.

Dynamic Surface Wetting and Heat Transfer in a Droplet-Particle System of Less Than Unity Size Ratio.

Dynamic surface wetting of particles in contact with droplet is a complex phenomenon ubiquitously encountered in many multiphase systems of industrial importance. In this study, we address this aspect by investigating impact behavior of a water droplet (diameter = 2.9 ± 0.1 mm) in the Weber number (We) range from ~4 to 104 on a stationary spherical brass particle (diameter = 10 mm) with and without heat transfer using a combination of high speed imaging and computational fluid dynamics (CFD) modeling approach. In cold state interactions (20°C), droplet exhibited oscillatory interfacial motion comprising periodic spreading and recoiling motion. Interactions involving heat transfer were studied in film boiling regime (350°C) and two outcomes were noted-droplet rebound and disintegration. A coupled Level Set and Volume of Fluid (VOF) approach based multiphase CFD model was utilized to predict the dynamic spread ratio and transient evolution of droplet shape during the interaction. To capture the complex contact line motion realistically, a continuous time varying profile of experimentally measured dynamic contact angles was used as a wall boundary condition for the cold interactions which provided good agreement with experimentally measured droplet spread ratio. In film boiling regime, droplet spread ratio was correlated to impact Weber number and a power law trend was obtained. Rebound and disintegration outcomes were characterized by the droplet-particle contact time. For simulating interactions in film boiling regime, a constant contact angle in the limit of super-hydrophobic surface was implemented in the CFD model to account for the apparent non-wetting effect due to vapor film formation at the contact area. A sensitivity analysis was performed involving three different contact angle boundary conditions (θ s = 150, 160, and 170°) to represent the surface hydrophobicity. CFD model predicted interaction outcomes and droplet spread ratios were in reasonable agreement with the experiment at different impact Weber numbers. Increase in spherical surface heat flux and corresponding rise in droplet temperature at different impact Weber numbers were also quantified which showed an increasing trend up to a critical Weber number for droplet disintegration.

Hysteresis-Free Carbon Nanotube Field-Effect Transistors.

While carbon nanotube (CNT) field-effect transistors (CNFETs) promise high-performance and energy-efficient digital systems, large hysteresis degrades these potential CNFET benefits. As hysteresis is caused by traps surrounding the CNTs, previous works have shown that clean interfaces that are free of traps are important to minimize hysteresis. Our previous findings on the sources and physics of hysteresis in CNFETs enabled us to understand the influence of gate dielectric scaling on hysteresis. To begin with, we validate through simulations how scaling the gate dielectric thickness results in greater-than-expected benefits in reducing hysteresis. Leveraging this insight, we experimentally demonstrate reducing hysteresis to <0.5% of the gate-source voltage sweep range using a very large-scale integration compatible and solid-state technology, simply by fabricating CNFETs with a thin effective oxide thickness of 1.6 nm. However, even with negligible hysteresis, large subthreshold swing is still observed in the CNFETs with multiple CNTs per transistor. We show that the cause of large subthreshold swing is due to threshold voltage variation between individual CNTs. We also show that the source of this threshold voltage variation is not explained solely by variations in CNT diameters (as is often ascribed). Rather, other factors unrelated to the CNTs themselves (i.e., process variations, random fixed charges at interfaces) are a significant factor in CNT threshold voltage variations and thus need to be further improved.

Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

Carbon nanotube circuit integration up to sub-20 nm channel lengths.

Carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging technology projected to achieve over an order of magnitude improvement in energy-delay product, a metric of performance and energy efficiency, compared to silicon-based circuits. However, due to substantial imperfections inherent with CNTs, the promise of CNFETs has yet to be fully realized. Techniques to overcome these imperfections have yielded promising results, but thus far only at large technology nodes (1 µm device size). Here we demonstrate the first very large scale integration (VLSI)-compatible approach to realizing CNFET digital circuits at highly scaled technology nodes, with devices ranging from 90 nm to sub-20 nm channel lengths. We demonstrate inverters functioning at 1 MHz and a fully integrated CNFET infrared light sensor and interface circuit at 32 nm channel length. This demonstrates the feasibility of realizing more complex CNFET circuits at highly scaled technology nodes.

Wafer-scale fabrication and characterization of thin-film transistors with polythiophene-sorted semiconducting carbon nanotube networks.

Semiconducting single-walled carbon nanotubes (SWCNTs) have great potential of becoming the channel material for future thin-film transistor technology. However, an effective sorting technique is needed to obtain high-quality semiconducting SWCNTs for optimal device performance. In our previous work, we reported a dispersion technique for semiconducting SWCNTs that relies on regioregular poly(3-dodecylthiophene) (rr-P3DDT) to form hybrid nanostructures. In this study, we demonstrate the scalability of those sorted CNT composite structures to form arrays of TFTs using standard lithographic techniques. The robustness of these CNT nanostructures was tested with Raman spectroscopy and atomic force microscope images. Important trends in device properties were extracted by means of electrical measurements for different CNT concentrations and channel lengths (L(c)). A statistical study provided an average mobility of 1 cm(2)/V·s and I(on)/I(off) as high as 10(6) for short channel lengths (L(c) = 1.5 µm) with 100% yield. This highlights the effectiveness of this sorting technique and its scalability for large-scale, flexible, and transparent display applications.

CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes.

Massive aligned carbon nanotubes hold great potential but also face significant integration/assembly challenges for future beyond-silicon nanoelectronics. We report a wafer-scale processing of aligned nanotube devices and integrated circuits, including progress on essential technological components such as wafer-scale synthesis of aligned nanotubes, wafer-scale transfer of nanotubes to silicon wafers, metallic nanotube removal and chemical doping, and defect-tolerant integrated nanotube circuits. We have achieved synthesis of massive aligned nanotubes on complete 4 in. quartz and sapphire substrates, which were then transferred to 4 in. Si/SiO(2) wafers. CMOS analogous fabrication was performed to yield transistors and circuits with features down to 0.5 mum, with high current density approximately 20 muA/mum and good on/off ratios. In addition, chemical doping has been used to build fully integrated complementary inverter with a gain approximately 5, and a defect-tolerant design has been employed for NAND and NOR gates. This full-wafer approach could serve as a critical foundation for future integrated nanotube circuits.

Solution assembly of organized carbon nanotube networks for thin-film transistors.

Ultrathin, transparent electronic materials consisting of solution-assembled nanomaterials that are directly integrated as thin-film transistors or conductive sheets may enable many new device structures. Applications ranging from disposable autonomous sensors to flexible, large-area displays and solar cells can dramatically expand the electronics market. With a practical, reliable method for controlling their electronic properties through solution assembly, submonolayer films of aligned single-walled carbon nanotubes (SWNTs) may provide a promising alternative for large-area, flexible electronics. Here, we report SWNT network TFTs (SWNTntTFTs) deposited from solution with controllable topology, on/off ratios averaging greater than 10(5), and an apparent mobility averaging 2 cm(2)/V.s, without any pre- or postprocessing steps. We employ a spin-assembly technique that results in chirality enrichment along with tunable alignment and density of the SWNTs by balancing the hydrodynamic force (spin rate) with the surface interaction force controlled by a chemically functionalized interface. This directed nanoscale assembly results in enriched semiconducting nanotubes yielding excellent TFT characteristics, which is corroborated with mu-Raman spectroscopy. Importantly, insight into the electronic properties of these SWNT networks as a function of topology is obtained.