On the kinetics of the removal of ligands from films of colloidal nanocrystals by plasmas.

This paper describes the kinetic limitations of etching ligands from colloidal nanocrystal assemblies (CNAs) by plasma processing. We measured the etching kinetics of ligands from a CNA model system (spherical ZrO2 nanocrystals, 2.5-3.5 nm diameter, capped with trioctylphosphine oxide) with inductively coupled plasmas (He and O2 feed gases, powers ranging from 7 to 30 W, at pressures ranging from 100 to 2000 mTorr and exposure times ranging between 6 and 168 h). The etching rate slows down by about one order of magnitude in the first minutes of etching, after which the rate of carbon removal becomes proportional to the third power of the carbon concentration in the CNA. Pressure oscillations in the plasma chamber significantly accelerate the overall rate of etching. These results indicate that the rate of etching is mostly affected by two main factors: (i) the crosslinking of the ligands in the first stage of plasma exposure, and (ii) the formation of a boundary layer at the surface of the CNA. Optimized conditions of plasma processing allow for a 60-fold improvement in etching rates compared to the previous state of the art and make the timeframes of plasma processing comparable to those of calcination.

Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films.

This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.

Calcination does not remove all carbon from colloidal nanocrystal assemblies.

Removing organics from hybrid nanostructures is a crucial step in many bottom-up materials fabrication approaches. It is usually assumed that calcination is an effective solution to this problem, especially for thin films. This assumption has led to its application in thousands of papers. We here show that this general assumption is incorrect by using a relevant and highly controlled model system consisting of thin films of ligand-capped ZrO2 nanocrystals. After calcination at 800 °C for 12 h, while Raman spectroscopy fails to detect the ligands after calcination, elastic backscattering spectrometry characterization demonstrates that ~18% of the original carbon atoms are still present in the film. By comparison plasma processing successfully removes the ligands. Our growth kinetic analysis shows that the calcined materials have significantly different interfacial properties than the plasma-processed counterparts. Calcination is not a reliable strategy for the production of single-phase all-inorganic materials from colloidal nanoparticles.