Monitoring the transformation of aliphatic and fullerene molecules by high-energy electrons using surface-enhanced Raman spectroscopy.

We report on using 100 keV electrons to obtain amorphous carbon from aliphatic and fullerene molecules, and study this process by monitoring their Raman signal. In this regard, we use self-assembled monolayers of gold nanoparticles to provide high electromagnetic field enhancement, which allows the detection of the Raman signal from even nanometer-thick layers of analyte. Our results show different dynamics in the amorphization process of the two molecules, although both show suppression of their original vibrational resonances even at low exposure doses. We have also used atomic-force microscopy to evaluate the sensitivity of the C60 molecules to electron beams in forming networks of amorphized molecules that are less soluble in the development process. This method allows precise patterning possibilities as well as in situ functionalization of carbonaceous thin films in the perspective of using in electronic device applications.

Enhancement of the intrinsic fluorescence of adenine using aluminum nanoparticle arrays.

This study demonstrates the metal-enhanced fluorescence of adenine using aluminum nanoparticle arrays in the deep UV range. It achieves the reproducible intensity enhancement of intrinsic fluorescence up to 80 on well-defined aluminum nanoparticle arrays at 257 nm excitation. In addition to a high signal enhancement, a strong modification of the fluorescence emission spectrum of adenine is observed. This study illustrates that the label-free detection of DNA bases and proteins that have low intrinsic fluorescence and absorption bands in the deep UV range can be facilitated using aluminum nanostructures.

Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths.

Manufacturing efficient and broadband optics is of high technological importance for various applications in all wavelength regimes. Particularly in the extreme ultraviolet and soft x-ray spectra, this becomes challenging due to the involved atomic absorption edges that rapidly change the optical constants in these ranges. Here we demonstrate a new interference lithography grating mask that can be used for nanopatterning in this spectral range. We demonstrate photolithography with cutting-edge resolution at 6.5 and 13.5 nm wavelengths, relevant to the semiconductor industry, as well as using 2.5 and 4.5 nm wavelength for patterning thick photoresists and fabricating high-aspect-ratio metal nanostructures for plasmonics and sensing applications.

Measuring three-dimensional interaction potentials using optical interference.

We describe the application of three-dimensional (3D) scattering interferometric (iSCAT) imaging to the measurement of spatial interaction potentials for nano-objects in solution. We study electrostatically trapped gold particles in a nanofluidic device and present details on axial particle localization in the presence of a strongly reflecting interface. Our results demonstrate high-speed (~kHz) particle tracking with subnanometer localization precision in the axial and average 2.5 nm in the lateral dimension. A comparison of the measured levitation heights of trapped particles with the calculated values for traps of various geometries reveals good agreement. Our work demonstrates that iSCAT imaging delivers label-free, high-speed and accurate 3D tracking of nano-objects conducive to probing weak and long-range interaction potentials in solution.

Soft electrostatic trapping in nanofluidics.

Trapping and manipulation of nano-objects in solution are of great interest and have emerged in a plethora of fields spanning from soft condensed matter to biophysics and medical diagnostics. We report on establishing a nanofluidic system for reliable and contact-free trapping as well as manipulation of charged nano-objects using elastic polydimethylsiloxane (PDMS)-based materials. This trapping principle is based on electrostatic repulsion between charged nanofluidic walls and confined charged objects, called geometry-induced electrostatic (GIE) trapping. With gold nanoparticles as probes, we study the performance of the devices by measuring the stiffness and potential depths of the implemented traps, and compare the results with numerical simulations. When trapping 100 nm particles, we observe potential depths of up to Q≅24 k B T that provide stable trapping for many days. Taking advantage of the soft material properties of PDMS, we actively tune the trapping strength and potential depth by elastically reducing the device channel height, which boosts the potential depth up to Q~200 k B T, providing practically permanent contact-free trapping. Due to a high-throughput and low-cost fabrication process, ease of use, and excellent trapping performance, our method provides a reliable platform for research and applications in study and manipulation of single nano-objects in fluids.

Beyond EUV lithography: a comparative study of efficient photoresists' performance.

Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra.