Selective synthesis of zeolites A and X from two industrial wastes: Crushed stone powder and aluminum ash.

Crushed stone powder and aluminum ash are industrial wastes, and effective utilization of these wastes has been highly expected. Since the main components of the two wastes are Si, Al and O, those wastes can be used as starting materials for synthesis of zeolites of which some types have been commercialized as catalysts and ion-exchangers. In this study, zeolites A and X well-known as practical materials were successfully synthesized with high purity using the two industrial wastes by a mild process based on two hydrothermal treatments with intermediate acid treatment. In the first hydrothermal treatment at 150 °C, quartz in the crushed stone powder was dissolved and acid-soluble hydroxysodalite (Na8(AlSiO4)6(H2O)2(OH)2) with Si/Al = 1 and sodium aluminosilicate (Na6(AlSiO4)6) were formed. Those compounds were dissolved with HCl aq. solution. The zeolites were successfully synthesized from the second hydrothermal treatment of the yellow dried filtrates at 80 °C in NaOH aq. solution. In the process proposed, removal of Ca from the crushed stone powder was effective to formation of zeolites A and/or X. Selective synthesis of zeolites A and X was achieved by controlling the acid treatment conditions. Furthermore, the effect of the drying condition of the filtrate obtained after the acid treatment was also investigated on the differences in the product phase.

Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching.

A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50 nm without any subsurface damage by applying one correction process. Furthermore, applying a pulse-modulated plasma markedly decreased the correction time of the thickness distribution without breaking the quartz crystal wafer by thermal stress.