RESUMO
An improvement in resistive switching (RS) characteristics of CeO2-based devices has been reported by charge transfer through Al metal as a dopant. Moreover, density functional theory (DFT) calculations have been performed to investigate the role of Al-layer sandwiched between CeO2 layers by the Vienna ab initio simulation package (VASP). Total density of states (TDOS) and partial electron density of states (PDOS) have been calculated and analyzed with respect to resistive switching. It is established that the oxygen vacancy based conductive filaments are formed and ruptured in the upper region of CeO2 layer, because of the fact that maximum transport of charge takes place in this region by Al and Ti (top electrode), while the lower region revealed less capability to generate conductive filaments because minimum charge transfer takes place in this region by Al and/or Pt (bottom electrode). The effect of Al and Al2O3 on both the electronic charge transfer from valence to conduction bands and the formation stability of oxygen vacancies in conductive filament have been discussed in detail. Experimental results demonstrated that the Ti/CeO2:Al/Pt sandwich structure exhibits significantly better switching characteristics including lower forming voltage, improved and stable SET/RESET voltages, enhanced endurance of more than 10(4) repetitive switching cycles and large memory window (ROFF/RON > 10(2)) as compared to undoped Ti/CeOx/Pt device. This improvement in memory switching behavior has been attributed to a significant decrease in the formation energy of oxygen vacancies and to the enhanced oxygen vacancies generation within the CeO2 layers owing to charge transferring and oxygen gettering ability of Al-dopant.