Observation of Two-Mode Squeezing in a Traveling Wave Parametric Amplifier.

Traveling wave parametric amplifiers (TWPAs) have recently emerged as essential tools for broadband near quantum-limited amplification. However, their use to generate microwave quantum states still misses an experimental demonstration. In this Letter, we report operation of a TWPA as a source of two-mode squeezed microwave radiation. We demonstrate broadband entanglement generation between two modes separated by up to 400 MHz by measuring logarithmic negativity between 0.27 and 0.51 and collective quadrature squeezing below the vacuum limit between 1.5 and 2.1 dB. This work opens interesting perspectives for the exploration of novel microwave photonics experiments with possible applications in quantum sensing and continuous variable quantum computing.

Kerr reversal in Josephson meta-material and traveling wave parametric amplification.

Josephson meta-materials have recently emerged as very promising platform for superconducting quantum science and technologies. Their distinguishing potential resides in ability to engineer them at sub-wavelength scales, which allows complete control over wave dispersion and nonlinear interaction. In this article we report a versatile Josephson transmission line with strong third order nonlinearity which can be tuned from positive to negative values, and suppressed second order non linearity. As an initial implementation of this multipurpose meta-material, we operate it to demonstrate reversed Kerr phase-matching mechanism in traveling wave parametric amplification. Compared to previous state of the art phase matching approaches, this reversed Kerr phase matching avoids the presence of gaps in transmission, can reduce gain ripples, and allows in situ tunability of the amplification band over an unprecedented wide range. Besides such notable advancements in the amplification performance with direct applications to superconducting quantum computing and generation of broadband squeezing, the in-situ tunability with sign reversal of the nonlinearity in traveling wave structures, with no counterpart in optics to the best of our knowledge, opens exciting experimental possibilities in the general framework of microwave quantum optics, single-photon detection and quantum limited amplification.

Magnetic particles for triggering insulin release in INS-1E cells subjected to a rotating magnetic field.

Diabetes is a major global health threat. Both academics and industry are striving to develop effective treatments for this disease. In this work, we present a new approach to induce insulin release from ß-islet pancreatic cells (INS-1E) by mechanical stimulation. Two types of experiments were carried out. First, a local stimulation was performed by dispersing anisotropic magnetic particles within the cell medium, which settled down almost immediately on cell plasma membranes. Application of a low frequency magnetic field (up to 40 Hz) generated by a custom-made magnetic device resulted in oscillations of these particles, which then exerted a mechanical constraint on the cell plasma membranes. The second type of experiment consisted of a global stimulation, where cells were grown on magneto-elastic membranes composed of a biocompatible polymer with embedded magnetic particles. Upon application of a rotating magnetic field, magnetic particles within the membrane were attracted towards the field source, resulting in the membrane's vibrations being transmitted to the cells grown on it. In both experiments, the cell response to these mechanical stimulations caused by application of the variable magnetic field was quantified via the measurement of insulin release in the growth medium. We demonstrated that the mechanical action induced by the motion of magnetic particles or by membrane vibrations was an efficient stimulus for insulin granule secretion from ß-cells. This opens a wide range of possible applications including the design of a system which triggers insulin secretion by ß-islet pancreatic cells on demand.

Junction fabrication by shadow evaporation without a suspended bridge.

We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by e-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in situ fabrication of junctions and capacitors without the use of the well-known suspended bridge (Dolan 1977 Appl. Phys. Lett. 31 337-9). The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible range of the junction size, from 10(-2) µm(2) to more than 10(4) µm(2). We have fabricated Al/AlO(x)/Al Josephson junctions, phase qubit and capacitors using a 100 kV e-beam writer. Although this high voltage enables a precise control of the undercut, implementation using a conventional 20 kV e-beam is also discussed. The phase qubit coherence times, extracted from spectroscopy resonance width, Rabi and Ramsey oscillation decays and energy relaxation measurements, are longer than the ones obtained in our previous samples realized by standard techniques. These results demonstrate the high quality of the junction obtained by this bridge-free technique.

Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect.

Superconductor-semiconductor-superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well as for future high-performance low power dissipating nanoelectronic and quantum devices. In this work, ultrascaled monolithic Al-Ge-Al nanowire heterostructures featuring monocrystalline Al leads and abrupt metal-semiconductor interfaces are used to probe the low-temperature transport in intrinsic Ge (i-Ge) quantum dots. In particular, demonstrating the ability to tune the Ge quantum dot device from completely insulating, through a single-hole-filling quantum dot regime, to a supercurrent regime, resembling a Josephson field effect transistor with a maximum critical current of 10 nA at a temperature of 390 mK. The realization of a Josephson field-effect transistor with high junction transparency provides a mechanism to study sub-gap transport mediated by Andreev states. The presented results reveal a promising intrinsic Ge-based architecture for hybrid superconductor-semiconductor devices for the study of Majorana zero modes and key components of quantum computing such as gatemons or gate tunable superconducting quantum interference devices.

Nanostructures made from superconducting boron-doped diamond.

We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films, grown by chemical vapour deposition, we pattern by electron-beam lithography devices with dimensions in the nanometer range. We show that even for such small devices, the superconducting properties of the material are well preserved: for wires of width less than 100 nm, we measure critical temperatures in the kelvin range and critical fields in the tesla range.

Cancer treatment by magneto-mechanical effect of particles, a review.

Cancer treatment by magneto-mechanical effect of particles (TMMEP) is a growing field of research. The principle of this technique is to apply a mechanical force on cancer cells in order to destroy them thanks to magnetic particles vibrations. For this purpose, magnetic particles are injected in the tumor or exposed to cancer cells and a low-frequency alternating magnetic field is applied. This therapeutic approach is quite new and a wide range of treatment parameters are explored to date, as described in the literature. This review explains the principle of the technique, summarizes the parameters used by the different groups and reports the main in vitro and in vivo results.

Observation of quantum many-body effects due to zero point fluctuations in superconducting circuits.

Electromagnetic fields possess zero point fluctuations which lead to observable effects such as the Lamb shift and the Casimir effect. In the traditional quantum optics domain, these corrections remain perturbative due to the smallness of the fine structure constant. To provide a direct observation of non-perturbative effects driven by zero point fluctuations in an open quantum system we wire a highly non-linear Josephson junction to a high impedance transmission line, allowing large phase fluctuations across the junction. Consequently, the resonance of the former acquires a relative frequency shift that is orders of magnitude larger than for natural atoms. Detailed modeling confirms that this renormalization is non-linear and quantum. Remarkably, the junction transfers its non-linearity to about thirty environmental modes, a striking back-action effect that transcends the standard Caldeira-Leggett paradigm. This work opens many exciting prospects for longstanding quests such as the tailoring of many-body Hamiltonians in the strongly non-linear regime, the observation of Bloch oscillations, or the development of high-impedance qubits.

Highly Transparent Contacts to the 1D Hole Gas in Ultrascaled Ge/Si Core/Shell Nanowires.

Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible semiconductor-superconductor interfaces. Here, we realize and measure axial Al-Ge-Al nanowire heterostructures with atomically precise interfaces, enwrapped by an ultrathin epitaxial Si layer further denoted as Al-Ge/Si-Al nanowire heterostructures. The heterostructures were synthesized by a thermally induced exchange reaction of single-crystalline Ge/Si core/shell nanowires and lithographically defined Al contact pads. Applying this heterostructure formation scheme enables self-aligned quasi one-dimensional crystalline Al leads contacting ultrascaled Ge/Si segments with contact transparencies greater than 96%. Integration into back-gated field-effect devices and continuous scaling beyond lithographic limitations allows us to exploit the full potential of the highly transparent contacts to the 1D hole gas at the Ge-Si interface. This leads to the observation of ballistic transport as well as quantum confinement effects up to temperatures of 150 K. Low-temperature measurements reveal proximity-induced superconductivity in the Ge/Si core/shell nanowires. The realization of a Josephson field-effect transistor allows us to study the subgap structure caused by multiple Andreev reflections. Most importantly, the absence of a quantum dot regime indicates a hard superconducting gap originating from the highly transparent contacts to the 1D hole gas, which is potentially interesting for the study of Majorana zero modes. Moreover, underlining the importance of the proposed thermally induced Al-Ge/Si-Al heterostructure formation technique, our system could contribute to the development of key components of quantum computing such as gatemon or transmon qubits.

Self-assembly of carbon-nanotube-based single-electron memories.

We demonstrate the wafer-scale integration of single-electron memories based on carbon nanotube field-effect transistors (CNFETs) using a process based entirely on self assembly. First, a "dry" self-assembly step based on chemical vapor deposition (CVD) allows the growth and connection of CNFETs. Next, a "wet" self-assembly step is used to attach a single 30-nm-diameter gold bead in the nanotube vicinity via chemical functionalization. The bead is used as the memory storage node while the CNFET operating in the subthreshold regime acts as an electrometer exhibiting exponential gain. Below 60 K, the transfer characteristics of gold-CNFETs show highly reproducible hysteretic steps. Evaluation of the capacitance confirms that these current steps originate from the controlled storage of single electrons with a retention time that exceeds 550 s at 4 K.

Multiscale investigation of graphene layers on 6H-SiC(000-1).

In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-µm scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferred orientations exist. This is confirmed at the nanometer scale by scanning tunneling microscopy (STM). Finally, STM (at the nm scale) and Raman spectroscopy (at the µm scale) show that the FLG stacking is turbostratic, and that the domain size of the crystallites ranges from 10 to 100 nm. The most striking result is that the FLGs experience a strong compressive stress that is seldom observed for graphene grown on the C face of SiC substrates.

The diamond superconducting quantum interference device.

Diamond is an electrical insulator in its natural form. However, when doped with boron above a critical level (∼0.25 atom %) it can be rendered superconducting at low temperatures with high critical fields. Here we present the realization of a micrometer-scale superconducting quantum interference device (µ-SQUID) made from nanocrystalline boron-doped diamond (BDD) films. Our results demonstrate that µ-SQUIDs made from superconducting diamond can be operated in magnetic fields as large as 4 T independent of the field direction. This is a decisive step toward the detection of quantum motion in a diamond-based nanomechanical oscillator.

Electronic confinement and coherence in patterned epitaxial graphene.

Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.