An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories.

One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options. Tools like machine learning (ML) and deep neural networks are becoming a de-facto standard. Nowadays, computing facilities based on the Von Neumann architecture are devoted to these tasks, yet rapidly hitting a bottleneck in performance and energy efficiency. The in-memory computing (IMC) architecture emerged as a revolutionary approach to overcome that issue. In this work, we propose an IMC architecture based on resistive switching memory (RRAM) crossbar arrays to provide a convenient primitive for matrix-vector multiplication in a single computational step. This opens massive performance improvement in the acceleration of a neural network that is frequently used in survival analysis of biomedical records, namely the DeepSurv. We explored how the synaptic weights mapping strategy and the programming algorithms developed to counter RRAM non-idealities expose a performance/energy trade-off. Finally, we discussed how this application is tailored for the IMC architecture rather than being executed on commodity systems.

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories.

Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology. However, the paradigm change represented by the 3D memory integration concept has complicated the randomization task due to the increased dimensions of the memory array, especially along the bitlines. In this work, we propose an easy to implement, cost effective, and fully scalable with memory dimensions, randomization scheme that guarantees optimal randomization along the wordline and the bitline dimensions. At the same time, we guarantee an upper bound on the maximum length of consecutive ones and zeros along the bitline to improve the memory reliability. Our method has been validated on commercial off-the-shelf TLC 3D NAND Flash memory with respect to the Raw Bit Error Rate metric extracted in different memory working conditions.

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices.

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO2 based memristive cells is studied. An extensive characterization of HfO2 based 1T1R cells, a comparison of the cell-to-cell variability, and reliability study is performed. The cells' behaviors during forming, set, and reset operations are monitored in order to relate their features to conductive filament properties and process-induced variability of the switching parameters. The modeling of the high resistance state (HRS) is performed by applying the Quantum-Point Contact model to assess the link between the deposition condition and the precursor chemistry with the resulting physical cells characteristics.