Detalhe da pesquisa
1.
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001).
Nano Lett
; 24(13): 3978-3985, 2024 Apr 03.
Artigo
Inglês
| MEDLINE | ID: mdl-38451178
2.
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3.
ACS Appl Mater Interfaces
; 15(39): 45997-46009, 2023 Oct 04.
Artigo
Inglês
| MEDLINE | ID: mdl-37733937
3.
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC.
J Phys Condens Matter
; 29(3): 035703, 2017 Jan 25.
Artigo
Inglês
| MEDLINE | ID: mdl-27869645