Detalhe da pesquisa
1.
Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics.
Small
; 19(49): e2303595, 2023 Dec.
Artigo
Inglês
| MEDLINE | ID: mdl-37612804
2.
Compact Modeling of Two-Dimensional Field-Effect Biosensors.
Sensors (Basel)
; 23(4)2023 Feb 07.
Artigo
Inglês
| MEDLINE | ID: mdl-36850440
3.
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor.
Nanotechnology
; 28(48): 485203, 2017 Dec 01.
Artigo
Inglês
| MEDLINE | ID: mdl-28972503
4.
Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors.
Adv Mater
; 34(48): e2201691, 2022 Dec.
Artigo
Inglês
| MEDLINE | ID: mdl-35593428
5.
Does carrier velocity saturation help to enhance f max in graphene field-effect transistors?
Nanoscale Adv
; 2(9): 4179-4186, 2020 Sep 16.
Artigo
Inglês
| MEDLINE | ID: mdl-36132766
6.
GFET Asymmetric Transfer Response Analysis through Access Region Resistances.
Nanomaterials (Basel)
; 9(7)2019 Jul 18.
Artigo
Inglês
| MEDLINE | ID: mdl-31323809
7.
Programa para ayudar a estudiantes de tercer año a integrar el contenido y la forma en la realización de la historia clínica / A program to help third year students to integrate content and form in the clinical history
Educ. méd. (Ed. impr.)
; 15(1): 53-61, mar. 2012. tab
Artigo
Espanhol
| IBECS (Espanha) | ID: ibc-105135