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1.
Opt Express ; 23(9): 10905-13, 2015 May 04.
Artigo em Inglês | MEDLINE | ID: mdl-25969186

RESUMO

We report on the first InP-based Mach-Zehnder modulator (MZM) employing quantum-confined Stark effect (QCSE) for operation around 2000 nm. The polarization sensitive device is based on 15 compressively strained quantum wells and achieves an electro-optic (EO) bandwidth of at least 9 GHz, with a DC extinction ratio of ~9 dB, and a V(π)L ~9.6 V.mm. We demonstrate back-to-back communication with a 10 Gb/s pseudo-random bit sequence (PRBS) of length 2(7)-1 at a wavelength around 2000 nm.

2.
Opt Lett ; 40(14): 3308-11, 2015 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-26176456

RESUMO

We show, for the first time, dense WDM (8×20 Gbit/s) transmission at 2 µm enabled by advanced modulation formats (4-ASK Fast-OFDM) and the development of key components, including a new arrayed waveguide grating (AWGr) at 2 µm. The AWGr shows -12.8±1.78 dB of excess loss with an 18-dB extinction ratio and a thermal tunability of 0.108 nm/°C.

3.
Phys Rev Lett ; 108(25): 256102, 2012 Jun 22.
Artigo em Inglês | MEDLINE | ID: mdl-23004625

RESUMO

Extensive experimental data and an accompanying theoretical model are presented for the self-limiting profiles and Ga segregation on patterned GaAs(111)B substrates during metalorganic vapor-phase epitaxy of Al(x)Ga(1-x)As. Self-limiting widths and segregation of Ga produce quantum dots along the base of pyramidal recesses bounded by (111)A planes and quantum wires along the vertical axis of the template, respectively. Coupled reaction-diffusion equations for precursor and adatom kinetics reproduce the measured concentration and temperature dependence of the self-limiting width and segregation. Our model can be extended to other patterned systems, providing a new paradigm for predicting the morphology of surface nanostructures and inferring their quantum optical properties.

4.
Phys Rev Lett ; 107(12): 127403, 2011 Sep 16.
Artigo em Inglês | MEDLINE | ID: mdl-22026800

RESUMO

A systematic and simple theoretical approach is proposed to analyze true degeneracies and polarized decay patterns of exciton complexes in semiconductor quantum dots. The results provide reliable spectral signatures for efficient symmetry characterization, and predict original features for low C(2v) and high C(3v) symmetries. Excellent agreement with single quantum dot spectroscopy of real pyramidal InGaAs/AlGaAs quantum dots grown along [111] is demonstrated. The high sensitivity of biexciton quantum states to exact high symmetry can be turned into an efficient uninvasive postgrowth selection procedure for quantum entanglement applications.

5.
Nature ; 438(7067): 479-82, 2005 Nov 24.
Artigo em Inglês | MEDLINE | ID: mdl-16306988

RESUMO

Picosecond and femtosecond spectroscopy allow the detailed study of carrier dynamics in nanostructured materials. In such experiments, a laser pulse normally excites several nanostructures at once. However, spectroscopic information may also be acquired using pulses from an electron beam in a modern electron microscope, exploiting a phenomenon called cathodoluminescence. This approach offers several advantages. The multimode imaging capabilities of the electron microscope enable the correlation of optical properties (via cathodoluminescence) with surface morphology (secondary electron mode) at the nanometre scale. The broad energy range of the electrons can excite wide-bandgap materials, such as diamond- or gallium-nitride-based structures that are not easily excited by conventional optical means. But perhaps most intriguingly, the small beam can probe a single selected nanostructure. Here we apply an original time-resolved cathodoluminescence set-up to describe carrier dynamics within single gallium-arsenide-based pyramidal nanostructures with a time resolution of 10 picoseconds and a spatial resolution of 50 nanometres. The behaviour of such charge carriers could be useful for evaluating elementary components in quantum computers, optical quantum gates or single photon sources for quantum cryptography.

6.
J R Soc Interface ; 10(84): 20130122, 2013 Jul 06.
Artigo em Inglês | MEDLINE | ID: mdl-23635491

RESUMO

Marine biofouling causes problems for technologies based on the sea, including ships, power plants and marine sensors. Several antifouling techniques have been applied to marine sensors, but most of these methodologies are environmentally unfriendly or ineffective. Bioinspiration, seeking guidance from natural solutions, is a promising approach to antifouling. Here, the eye of the green crab Carcinus maenas was regarded as a marine sensor model and its surface characterized by means of atomic force microscopy. Engineered surface micro- and nanotopography is a new mechanism found to limit biofouling, promising an effective solution with much reduced environmental impact. Besides giving a new insight into the morphology of C. maenas eye and its characterization, our study indicates that the eye surface probably has antifouling/fouling-release potential. Furthermore, the topographical features of the surface may influence the wettability properties of the structure and its interaction with organic molecules. Results indicate that the eye surface micro- and nanotopography may lead to bioinspired solutions to antifouling protection.


Assuntos
Biomimética/métodos , Braquiúros/anatomia & histologia , Olho/anatomia & histologia , Propriedades de Superfície , Análise de Variância , Animais , Imageamento Tridimensional , Irlanda , Microscopia de Força Atômica
7.
Nano Lett ; 7(8): 2227-33, 2007 Aug.
Artigo em Inglês | MEDLINE | ID: mdl-17625903

RESUMO

We report the photoluminescence (PL) and polarization-resolved PL characteristics of a novel GaAs/AlGaAs quantum wire/dot semiconductor system, realized by metalorganic vapor-phase epitaxy of site-controlled, self-assembled nanostructures in inverted tetrahedral pyramids. By systematically changing the length of the quantum wires, we implement a continuous transition between the regimes of two-dimensional and three-dimensional quantum confinement. The two main evidences for this transition are observed experimentally and confirmed theoretically: (i) strongly blue-shifted ground-state emission, accompanied by increase separation of ground and excited transition energies; and (ii) change in the orientation of the main axis of linear polarization of the photoluminescence, from parallel to perpendicular with respect to the wire axis. This latter effect, whose origin is shown to be purely due to quantum confinement and valence band mixing, sets in at wire lengths of only approximately 30 nm.


Assuntos
Cristalização/métodos , Modelos Químicos , Modelos Moleculares , Nanotubos/química , Nanotubos/ultraestrutura , Pontos Quânticos , Semicondutores , Simulação por Computador , Transporte de Elétrons , Substâncias Macromoleculares/química , Teste de Materiais , Conformação Molecular , Nanotecnologia/métodos , Tamanho da Partícula , Propriedades de Superfície
8.
Nano Lett ; 7(5): 1282-5, 2007 May.
Artigo em Inglês | MEDLINE | ID: mdl-17397234

RESUMO

A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing.

9.
Phys Rev Lett ; 97(19): 196802, 2006 Nov 10.
Artigo em Inglês | MEDLINE | ID: mdl-17155649

RESUMO

We have measured the temperature dependence of the conductance in long V-groove quantum wires fabricated in GaAs/AlGaAs heterostructures. Our data are consistent with recent theories developed within the framework of the Luttinger-liquid model, in the limit of weakly disordered wires. We show that, for the relatively low level of disorder in our quantum wires, the value of the interaction parameter g congruent with 0.66, which is the expected value for GaAs. However, samples with a higher level of disorder show conductance with stronger temperature dependence, which does not allow their treatment in the framework of perturbation theory. Fitting such data with perturbation-theory models leads inevitably to wrong (lower) values of g.

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