2D-materials-integrated optoelectromechanics: recent progress and future perspectives.

The discovery of two-dimensional (2D) materials has gained worldwide attention owing to their extraordinary optical, electrical, and mechanical properties. Due to their atomic layer thicknesses, the emerging 2D materials have great advantages of enhanced interaction strength, broad operating bandwidth, and ultralow power consumption for optoelectromechanical coupling. The van der Waals (vdW) epitaxy or multidimensional integration of 2D material family provides a promising platform for on-chip advanced nano-optoelectromechanical systems (NOEMS). Here, we provide a comprehensive review on the nanomechanical properties of 2D materials and the recent advances of 2D-materials-integrated nano-electromechanical systems and nano-optomechanical systems. By utilizing active nanophotonics and optoelectronics as the interface, 2D active NOEMS and their coupling effects are particularly highlighted at the 2D atomic scale. Finally, we share our viewpoints on the future perspectives and key challenges of scalable 2D-materials-integrated active NOEMS for on-chip miniaturized, lightweight, and multifunctional integration applications.

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures.

Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe and 3D wurtzite GaN polar semiconductors to construct MoSSe/GaN polar heterostructures by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV in the N polarity to -0.24 eV/-0.42 eV in the Ga polarity. In particular, the polarity reversal of GaN in contact with Janus MoSSe not only determined the charge transfer direction but also significantly increased the electrostatic potential difference from 0.71 eV/0.78 eV in the N polarity to 3.13 eV/2.24 eV in the Ga polarity. In addition, strain modulation was further utilized to enhance interfacial polarization and tune the electronic energy band profiles of Janus MoSSe/GaN polar heterostructures. By applying in-plane biaxial strains, the AA and AA' polarity configurations induced band alignment transition from type I (tensile) to type II (compressive). As a result, both the polarity reversal and strain modulation provide effective ways for the multifunctional manipulation and facile design of Janus MoSSe/III-nitrides polar heterostructures, which broaden the Janus 2D/3D polar semiconducting devices in advanced electronics, optoelectronics, and energy harvesting applications.

Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics.

The spatial distribution of electric field in photovoltaic multiple quantum wells (MQWs) is extremely important to dictate the mutual competition of photoelectric conversion and optical transition. Here, electric-field-driven photoluminescence (PL) in both steady-state and transient-state has been utilized to directly investigate the internal photoelectric conversion processes in InGaN-based MQW photovoltaic cell. As applying the reversed external electric field, the compensation of the quantum confined stark effect (QCSE) in InGaN QW is beneficial to help the photoabsorbed minor carriers drift out from the localized states, whereas extremely weakening the PL radiative recombination. A directly driven force by the reversed external electric field decreases the transit time of photocarriers drifting in InGaN QW. And hence, the overall dynamic PL decay including both the slow and fast processes gradually speeds up from 19.2 ns at the open-circuit condition to 3.9 ns at a negative bias of -3 V. In particular, the slow PL decay lifetime declines more quickly than that of the fast one. It is the delocalization of photocarriers by electric-field drift that helps to further enhance the high-efficiency photoelectric conversion except for the tunneling transport in InGaN-based MQW photovoltaics. Therefore, it can be concluded that the electric-field PL probe may provide a direct method for evaluating the photoelectric conversion in multilayer quantum structures and related multijunction photovoltaic cells.

Raman study of 2D anatase TiO2 nanosheets.

Herein, we present for the first time a spectroscopic study of two-dimensional (2D) anatase TiO2 nanosheets. Previous publications demonstrated that Raman spectroscopy was mostly employed to characterize the TiO2 nanoparticle size and the phase transition of amorphous-anatase and anatase-rutile. In this study, TiO2 nanosheets were characterized by XRD, AFM and Raman spectroscopy, which demonstrated a shift toward higher frequency and broadening in the full width at half maximum of the characteristic Eg mode by decreasing the thickness of anatase TiO2 with a 2D nanostructure. In contrast to the study of TiO2 nanoparticles, the Raman vibrations can be attributed to phonon confinement in 2D TiO2 nanosheets which can be employed to characterize the thickness of TiO2 nanosheets. In order to effectively identify the thickness of the 2D TiO2 nanostructure, we established a reliable method for the examination by characterizing the shifts of the Eg mode.

Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure.

Electron transport layers (ETLs) play a key role in the electron transport properties and photovoltaic performance of solar cells. Although the existing ETLs such as TiO2, ZnO and SnO2 have been widely used to fabricate high performance solar cells, they still suffer from several inherent drawbacks such as low electron mobility and poor chemical stability. Therefore, exploring other novel and effective electron transport materials is of great importance. Gallium nitride (GaN) as an emerging candidate with excellent optoelectronic properties attracts our attention, in particular its significantly higher electron mobility and similar conduction band position to TiO2. Here, we mainly focus on the investigation of interfacial carrier transport properties of a GaN epilayer/quantum dot hybrid structure. Benefiting from the quantum effects of QDs, suitable energy level arrangements have formed between the GaN and CdSe QDs. It is revealed that the GaN epilayer exhibits better electron extraction ability and faster interfacial electron transfer than the rutile TiO2 single crystal. Moreover, the corresponding electron transfer rates of 4.44 × 108 s-1 and 8.98 × 108 s-1 have been calculated, respectively. This work preliminarily shows the potential application of GaN in quantum dot solar cells (QDSCs). Carefully tailoring the structure and optoelectronic properties of GaN, in particular realizing the low-temperature deposition of high-quality GaN on various substrates, will significantly promote the construction of highly efficient GaN-ETL based QDSCs.

Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS2 Template.

Ultrathin gallium nitride (GaN) application can be profoundly influenced by its quality, especially the issue of amorphous interfacial layers formed on conventional substrates. Herein, we report a two-step deposition of an ultrathin GaN film via the plasma-enhanced atomic layer deposition (PEALD) technique on a mono-MoS2 template over a SiO2/Si substrate for quality improvement, by starting the deposition temperature at 260 °C and then ramping it to 320 °C. It was found that a lower initiating deposition temperature could be conducive to maintaining the mono-MoS2 template to support the subsequent growth of GaN. Compared to the control group of one-step high-temperature deposition at 320 °C, ideal layer-by-layer film growth is achieved at the low temperature of the two-step method instead of island formation, leading to the direct crystallization of GaN on the substrate with a rather sharp interface. Structural and chemical characterizations show that this two-step method produces a preferred [0001] orientation of the film originating from the interface region. Additionally, the improved two-step ultrathin GaN displays a smooth surface roughness as low as 0.58 nm, a low oxygen impurity concentration of 3.6%, and a nearly balanced Ga/N stoichiometry of 0.95:1. Our work paves a possible way to the feasible fabrication of ultrathin high-quality PEALD-GaN, and it is promising for better performance of relevant devices.

Dynamic real-time imaging of living cell traction force by piezo-phototronic light nano-antenna array.

Dynamic mapping of the cell-generated force of cardiomyocytes will help provide an intrinsic understanding of the heart. However, a real-time, dynamic, and high-resolution mapping of the force distribution across a single living cell remains a challenge. Here, we established a force mapping method based on a "light nano-antenna" array with the use of piezo-phototronic effect. A spatial resolution of 800 nm and a temporal resolution of 333 ms have been demonstrated for force mapping. The dynamic mapping of cell force of live cardiomyocytes was directly derived by locating the antennas' positions and quantifying the light intensities of the piezo-phototronic light nano-antenna array. This study presents a rapid and ultrahigh-resolution methodology for the fundamental study of cardiomyocyte behavior at the cell or subcellular level. It can provide valuable information about disease detection, drug screening, and tissue engineering for heart-related studies.

A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating.

III-nitride solid-state microdisplays have significant advantages, including high brightness and high resolution, for the development of advanced displays, high-definition projectors, head-mounted displays, large-capacity optical communication systems, and so forth. Herein, a high-brightness InGaN/GaN multiple-quantum-well (MQW) nanoemitter array with an ultrahigh resolution of 31 750 dpi was achieved by combining a top-down fabrication with surface passivation of plasma-enhanced atomic layer deposition (PEALD)-grown AlN coating. With regard to the nanometer-level top-down etching, the surface damage or defects on the newly-formed sidewall play a significant role in the photoluminescence (PL) quality. Note that these arrays can be effectively passivated by the PEALD-grown AlN coating with an over 345% PL enhancement. In addition, a sharp band bending at the interface of the luminescent InGaN QW and the AlN coating layer can electrically drift away the photogenerated electrons from the surface traps; this leads to enhancement of the bulk PL radiative recombination with a fast PL decay rate. Therefore, we have demonstrated a feasible way for realizing an advanced nanoemitter array with both high brightness and ultrahigh resolution for future smart displays, high-resolution imaging, big-data optical information systems and so on.

Interfacial Tailoring for the Suppression of Impurities in GaN by In Situ Plasma Pretreatment via Atomic Layer Deposition.

A method for suppressing impurities in GaN thin films grown via plasma-enhanced atomic deposition (PEALD) through the in situ pretreatment of Si (100) substrate with plasma was developed. This approach leads to a superior GaN/Si (100) interface. After pretreatment, the thickness of the interfacial layer between GaN films and the substrates decreases from 2.0 to 1.6 nm, and the oxygen impurity content at the GaN/Si (100) interface reduces from 34 to 12%. The pretreated GaN films exhibit thinner amorphous transition GaN layer of 5.3 nm in comparison with those nonpretreated of 18.0 nm, which indicates the improvement of crystallinity of GaN. High-quality GaN films with enhanced density are obtained because of the pretreatment. This promising approach is considered to facilitate the growth of high-quality thin films via PEALD.

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity.

Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100). It is consistent with high-resolution image of the sharp interface analyzed by transmission electron microscope (TEM). The highly uniform thickness throughout the 2-inch size AlN film with blue covered surface was determined by spectroscopic ellipsometry (SE). Grazing incident X-ray diffraction (GIXRD) patterns indicate that the AlN films are polycrystalline with wurtzite structure and have a tendency to form (002) preferential orientation with increasing of the thickness. The obtained AlN films could open up a new approach of research in the use of AlN as the template to support gallium nitride (GaN) growth on silicon substrates.

Piezo-phototronic effect enhanced UV photodetector based on CuI/ZnO double-shell grown on flexible copper microwire.

In this work, we present a facile, low-cost, and effective approach to fabricate the UV photodetector with a CuI/ZnO double-shell nanostructure which was grown on common copper microwire. The enhanced performances of Cu/CuI/ZnO core/double-shell microwire photodetector resulted from the formation of heterojunction. Benefiting from the piezo-phototronic effect, the presentation of piezocharges can lower the barrier height and facilitate the charge transport across heterojunction. The photosensing abilities of the Cu/CuI/ZnO core/double-shell microwire detector are investigated under different UV light densities and strain conditions. We demonstrate the I-V characteristic of the as-prepared core/double-shell device; it is quite sensitive to applied strain, which indicates that the piezo-phototronic effect plays an essential role in facilitating charge carrier transport across the CuI/ZnO heterojunction, then the performance of the device is further boosted under external strain.

Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio.

Flexible self-powered sensing is urgently needed for wearable, portable, sustainable, maintenance-free and long-term applications. Here, we developed a flexible and self-powered GaN membrane-based ultraviolet (UV) photoswitch with high on/off ratio and excellent sensitivity. Even without any power supply, the driving force of UV photogenerated carriers can be well boosted by the combination of both built-in electric field and piezoelectric polarization field. The asymmetric metal-semiconductor-metal structure has been elaborately utilized to enhance the carrier separation and transport for highly sensitive UV photoresponse. Its UV on/off ratio and detection sensitivity reach to 4.67 × 10(5) and 1.78 × 10(12) cm·Hz(0.5) W(1-), respectively. Due to its excellent mechanical flexibility, the piezoelectric polarization field in GaN membrane can be easily tuned/controlled based on piezo-phototronic effect. Under 1% strain, a stronger and broader depletion region can be obtained to further enhance UV on/off ratio up to 154%. As a result, our research can not only provide a deep understanding of local electric field effects on self-powered optoelectronic detection, but also promote the development of self-powered flexible optoelectronic devices and integrated systems.

Self-Powered Random Number Generator Based on Coupled Triboelectric and Electrostatic Induction Effects at the Liquid-Dielectric Interface.

Modern cryptography increasingly employs random numbers generated from physical sources in lieu of conventional software-based pseudorandom numbers, primarily owing to the great demand of unpredictable, indecipherable cryptographic keys from true random numbers for information security. Thus, far, the sole demonstration of true random numbers has been generated through thermal noise and/or quantum effects, which suffers from expensive and complex equipment. In this paper, we demonstrate a method for self-powered creation of true random numbers by using triboelectric technology to collect random signals from nature. This random number generator based on coupled triboelectric and electrostatic induction effects at the liquid-dielectric interface includes an elaborately designed triboelectric generator (TENG) with an irregular grating structure, an electronic-optical device, and an optical-electronic device. The random characteristics of raindrops are harvested through TENG and consequently transformed and converted by electronic-optical device and an optical-electronic device with a nonlinear characteristic. The cooperation of the mechanical, electrical, and optical signals ensures that the generator possesses complex nonlinear input-output behavior and contributes to increased randomness. The random number sequences are deduced from final electrical signals received by an optical-electronic device using a familiar algorithm. These obtained random number sequences exhibit good statistical characteristics, unpredictability, and unrepeatability. Our study supplies a simple, practical, and effective method to generate true random numbers, which can be widely used in cryptographic protocols, digital signatures, authentication, identification, and other information security fields.

Lattice Strain Induced Remarkable Enhancement in Piezoelectric Performance of ZnO-Based Flexible Nanogenerators.

In this work, by employing halogen elements (fluorine, chlorine, bromine, and iodine) as dopant we demonstrate a unique strategy to enhance the output performance of ZnO-based flexible piezoelectric nanogenerators. For a halogen-doped ZnO nanowire film, dopants and doping concentration dependent lattice strain along the ZnO c-axis are established and confirmed by the EDS, XRD, and HRTEM analysis. Although lattice strain induced charge separation was theoretically proposed, it has not been experimentally investigated for wurtzite structured ZnO nanomaterials. Tuning the lattice strain from compressive to tensile state along the ZnO c-axis can be achieved by a substitution of halogen dopant from fluorine to other halogen elements due to the ionic size difference between dopants and oxygen. With its focus on a group of nonmetal element induced lattice strain in ZnO-based nanomaterials, this work paves the way for enhancing the performance of wurtzite-type piezoelectric semiconductor nanomaterials via lattice strain strategy which can be employed to construct piezoelectric nanodevices with higher efficiency in a cost-effective manner.

Triboelectric Nanogenerator as a Self-Powered Communication Unit for Processing and Transmitting Information.

In this paper, we demonstrate an application of a triboelectric nanogenerator (TENG) as a self-powered communication unit. An elaborately designed TENG is used to translate a series of environmental triggering signals into binary digital signals and drives an electronic-optical device to transmit binary digital data in real-time without an external power supply. The elaborately designed TENG is built in a membrane structure that can effectively drive the electronic-optical device in a bandwidth from 1.30 to 1.65 kHz. Two typical communication modes (amplitude-shift keying and frequency-shift keying) are realized through the resonant response of TENG to different frequencies, and two digital signals, i.e., "1001" and "0110", are successfully transmitted and received through this system, respectively. Hence, in this study, a simple but efficient method for directly transmitting ambient vibration to the receiver as a digital signal is established using an elaborately designed TENG and an optical communication technique. This type of the communication system, as well as the implementation method presented, exhibits great potential for applications in the smart city, smart home, password authentication, and so on.

High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

Magnetic-mechanical-electrical-optical coupling effects in GaN-based LED/rare-earth terfenol-D structures.

A multi-field coupling structure is designed and investigated, which combines GaN-based optoelectronic devices and Terfenol-D. The abundant coupling effects and multifunctionalities among magnetics, mechanics, electrics, and optics are investigated by a combination of non-magnetic GaN-based piezoelectronic optoelectronic characteristics and the giant magnetomechanical properties of Terfenol-D. A few potential new areas of studies are proposed.