RESUMO
The effects of a static magnetic field on systems with chaotic dynamical behavior have attracted little attention so far. Here, Chua's electronic circuit with an inductor placed in a static uniform magnetic field operating in a chaotic double-scroll regime is studied experimentally. The effect of the magnetic field on the duty cycle factor and the spike count rate, with spikes defined by crossings between the scrolls of the double-scroll attractor, is described. A slow monotonic variation in the duty cycle factor and constant spike count rate is observed for magnetic field intensities up to the threshold, where both these metrics change severely; the dynamic trajectory remains on one scroll and spikes disappear. The dependence of the static magnetic field intensity on Chua's circuit resistivity at the threshold is given. Two biomimetic magnetic chaotic sensors are proposed: one based on one Chua's circuit and another that can have various transfer functions and is composed of several independent Chua's circuits.
Assuntos
Biomimética , Dinâmica não Linear , Eletrônica , Campos Magnéticos , Fenômenos FísicosRESUMO
Cellular Nonlinear Networks (CNN) are a concept introduced in 1988 by Leon Chua and Lin Yang as a bio-inspired architecture capable of massively parallel computation. Since then, CNN have been enhanced by incorporating designs that incorporate memristors to profit from their processing and memory capabilities. In addition, Stochastic Computing (SC) can be used to optimize the quantity of required processing elements; thus it provides a lightweight approximate computing framework, quite accurate and effective, however. In this work, we propose utilization of SC in designing and implementing a memristor-based CNN. As a proof of the proposed concept, an example of application is presented. This application combines Matlab and a FPGA in order to create the CNN. The implemented CNN was then used to perform three different real-time applications on a 512 × 512 gray-scale and a 768 × 512 color image: storage of the image, edge detection, and image sharpening. It has to be pointed out that the same CNN was used for the three different tasks, with the sole change of some programmable parameters. Results show an excellent capability with significant accompanying advantages, such as the low number of needed elements further allowing for a low cost FPGA-based system implementation, something confirming the system's capacity for real time operation.
RESUMO
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. For the full industrial development of these devices different simulation tools and compact models are needed in order to allow computer-aided design, both at the device and circuit levels. Most of the different RRAM models presented so far in the literature deal with temperature effects since the physical mechanisms behind RS are thermally activated; therefore, an exhaustive description of these effects is essential. As far as we know, no revision papers on thermal models have been published yet; and that is why we deal with this issue here. Using the heat equation as the starting point, we describe the details of its numerical solution for a conventional RRAM structure and, later on, present models of different complexity to integrate thermal effects in complete compact models that account for the kinetics of the chemical reactions behind resistive switching and the current calculation. In particular, we have accounted for different conductive filament geometries, operation regimes, filament lateral heat losses, the use of several temperatures to characterize each conductive filament, among other issues. A 3D numerical solution of the heat equation within a complete RRAM simulator was also taken into account. A general memristor model is also formulated accounting for temperature as one of the state variables to describe electron device operation. In addition, to widen the view from different perspectives, we deal with a thermal model contextualized within the quantum point contact formalism. In this manner, the temperature can be accounted for the description of quantum effects in the RRAM charge transport mechanisms. Finally, the thermometry of conducting filaments and the corresponding models considering different dielectric materials are tackled in depth.
RESUMO
The self-organizing mechanism is a universal approach that is widely followed in nature. In this work, a novel self-organizing model describing diffusion over a lattice is introduced. Simulation results for the model's active lattice sites demonstrate an evolution curve that is very close to those describing the evolution of infected European populations by COVID-19. The model was further examined against real data regarding the COVID-19 epidemic for seven European countries (with a total population of 290 million) during the periods in which social distancing measures were imposed, namely Italy and Spain, which had an enormous spread of the disease; the successful case of Greece; and four central European countries: France, Belgium, Germany and the Netherlands. The value of the proposed model lies in its simplicity and in the fact that it is based on a universal natural mechanism, which through the presentation of an equivalent dynamical system apparently documents and provides a better understanding of the dynamical process behind viral epidemic spreads in general-even pandemics, such as in the case of COVID-19-further allowing us to come closer to controlling such situations. Finally, this model allowed the study of dynamical characteristics such as the memory effect, through the autocorrelation function, in the studied epidemiological dynamical systems.