Ultrathin In2 O3 Nanosheets toward High Responsivity and Rejection Ratio Visible-Blind UV Photodetection.

Photoelectrochemical-type visible-blind ultraviolet photodetectors (PEC VBUV PDs) have gained ever-growing attention due to their simple fabrication processes, uncomplicated packaging technology, and high sensitivity. However, it is still challenging to achieve high-performance PEC VBUV PDs based on a single material with good spectral selectivity. Here, it is demonstrated that individual ultrathin indium oxide (In2 O3 ) nanosheets (NSs) are suitable for designing high-performance PEC VBUV PDs with high responsivity and UV/visible rejection ratio for the first time. In2 O3 NSs PEC PDs show excellent UV photodetection capability with an ultrahigh photoresponsivity of 172.36 mA W-1 and a high specific detectivity of 4.43 × 1011 Jones under 254 nm irradiation, which originates from the smaller charge transfer resistance (Rct ) at the In2 O3 NSs/electrolyte interface. The light absorption of In2 O3 NSs takes a blueshift due to the quantum confinement effect, granting good spectral selectivity for visible-blind detection. The UV/visible rejection ratio of In2 O3 NSs PEC PDs is 1567, which is 30 times higher than that of In2 O3 nanoparticles (NPs) and exceeds all recently reported PEC VBUV PDs. Moreover, In2 O3 NSs PEC PDs show good stability and good underwater imaging capability. The results verify that ultrathin In2 O3 NSs have potential in underwater optoelectronic devices.

Oxygen-vacancy-dependent high-performanceα-Ga2O3nanorods photoelectrochemical deep UV photodetectors.

Ga2O3is a good candidate for deep ultraviolet photodetectors due to its wide-bandgap, good chemical, and thermal stability. Ga2O3-based photoelectrochemical (PEC) photodetectors attract increasing attention due to the simple fabrication and self-powered capability, but the corresponding photoresponse is still inferior. In this paper, the oxygen vacancy (Vo) engineering towardsα-Ga2O3was proposed to obtain high-performance PEC photodetectors. Theα-Ga2O3nanorods were synthesized by a simple hydrothermal method with an annealing process. The final samples were named as Ga2O3-400, Ga2O3-500, and Ga2O3-600 for annealing at 400 ℃, 500 ℃, and 600 ℃, respectively. Different annealing temperatures lead to different Voconcentrations in theα-Ga2O3nanorods. The responsivity is 101.5 mA W-1for Ga2O3-400 nanorod film-based PEC photodetectors under 254 nm illumination, which is 1.4 and 4.0 times higher than those of Ga2O3-500 and Ga2O3-600 nanorod film-based PEC photodetectors, respectively. The photoresponse ofα-Ga2O3nanorod film-based PEC photodetectors strongly depends on the Voconcentration and high Voconcentration accelerates the interfacial carrier transfer of Ga2O3-400, enhancing the photoresponse of Ga2O3-400 nanorod film-based PEC photodetectors. Furthermore, theα-Ga2O3nanorod film-based PEC photodetectors have good multicycle, long-term stability, and repeatability. Our result shows thatα-Ga2O3nanorods have promising applications in deep UV photodetectors.

Mechanism investigation of highly selective inhibitors toward phosphodiesterase 5 and 6 via the in vitro calculation and simulation.

Introduction: In clinical practice, phosphodiesterase 5 (PDE5) inhibitors are commonly used to treat erectile dysfunction and pulmonary arterial hypertension. However, due to the high structural similarity between PDE5 and Phosphodiesterase 6 (PDE6), there is a risk that existing drugs will cause off-target effects on PDE6 resulting in visual disorders such as low visual acuity and color blindness. Previous research on the selectivity of PDE5 inhibitors focused on marketed drugs such as sildenafil and tadalafil. Methods: In this study, a highly selective PDE5 inhibitor, ligand3, was used as the subject, and molecular docking, molecular dynamics simulations, MM-GBSA, alanine scanning, and independent gradient model analysis were employed to investigate the biological mechanism underlying the selectivity of PDE5 inhibitors. Results and Discussion: The present work revealed that the binding mode of ligand3 to the PDE5A and PDE6C targets was distinctly different. Ligand3 exhibited stronger coulombic forces when binding to PDE5A, while showing stronger van der waals forces when binding to PDE6C. Ligand3 binds more deeply at the active site of PDE5A than at PDE6C, allowing its side chains to effectively bind to the critical TYR612, whereas in the case of the shallow binding to PDE6C, ligand3 lacks a similar effect. Mechanism investigations of highly selective inhibitors through computational simulation might provide an insight into potent treatment of drugs.

Advancements of engineered live oncolytic biotherapeutics (microbe/virus/cells): Preclinical research and clinical progress.

The proven efficacy of immunotherapy in fighting tumors has been firmly established, heralding a new era in harnessing both the innate and adaptive immune systems for cancer treatment. Despite its promise, challenges such as inefficient delivery, insufficient tumor penetration, and considerable potential toxicity of immunomodulatory agents have impeded the advancement of immunotherapies. Recent endeavors in the realm of tumor prophylaxis and management have highlighted the use of living biological entities, including bacteria, oncolytic viruses, and immune cells, as a vanguard for an innovative class of live biotherapeutic products (LBPs). These LBPs are gaining recognition for their inherent ability to target tumors. However, these LBPs must contend with significant barriers, including robust immune clearance mechanisms, cytotoxicity and other in vivo adverse effects. Priority must be placed on enhancing their safety and therapeutic indices. This review consolidates the latest preclinical research and clinical progress pertaining to the exploitation of engineered biologics, spanning bacteria, oncolytic viruses, immune cells, and summarizes their integration with combination therapies aimed at circumventing current clinical impasses. Additionally, the prospective utilities and inherent challenges of the biotherapeutics are deliberated, with the objective of accelerating their clinical application in the foreseeable future.

Achieving High-Performance Self-Powered Visible-Blind Ultraviolet Photodetection Using Alloy Engineering.

The exploration and development of self-powered visible-blind ultraviolet photodetectors (VBUV PDs) with high responsivity and wavelength selectivity have far-reaching significance for versatile applications. Although In2O3 shows potential for UV detection due to good UV absorption and electrical transport properties, the poor wavelength selectivity impedes further application in VBUV PDs. Here, a self-powered photoelectrochemical-type (PEC) VBUV PD is demonstrated by using gallium-indium oxide alloys (Ga-In OAs). The self-powered Ga-In OAs-based PEC VBUV PDs exhibit good VBUV photodetection performance, including a high responsivity of 50.04 mA/W and a high detectivity of 6.03 × 1010 Jones under 254 nm light irradiation, a good wavelength selectivity (UV/visible light rejection ratio of 262.45), and a fast response time (0.45/0.38 s). The good self-powered VBUV detection performance of Ga-In OAs is attributed to the larger band gap and smaller charge-transfer resistance induced by alloy engineering, which not only suppresses the absorption of visible light but also accelerates interfacial charge transfer. Moreover, an underwater optical communication system is demonstrated by using the self-powered Ga-In OAs PEC VBUV PDs. This study demonstrates that alloy engineering is a powerful tool to improve the performance of In2O3-based PEC PDs, and Ga-In OAs have great application potential for underwater optoelectronic devices.

Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping.

Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to its good light absorption and electrical transport properties. However, 2D InSe photodetectors usually endure a large driving voltage, and 2D InSe-based heterojunction photodetectors require complex fabrication processes. Here, we demonstrate high-performance self-powered InSe-based photoelectrochemical (PEC) photodetectors using electrochemical intercalated ultrathin InSe nanosheets. The ultrathin InSe nanosheets have good crystallinity with a uniform thickness of 1.4-2.1 nm, lateral size up to 18 µm, and yield of 82%. The self-powered InSe-based PEC photodetectors show broadband photoresponse ranging from 365 to 850 nm. The photoresponse of InSe-based PEC photodetectors is boosted by suppressing p-type doping of the intercalator with annealing, which improves the electrical properties and facilitates electron transport from InSe to the electrode. The self-powered annealed InSe (A-InSe) PEC photodetectors show a high responsivity of 10.14 mA/W and fast response speed of 2/37 ms. Moreover, the self-powered PEC photodetectors have good stability under UV-NIR irradiation. Furthermore, the photoresponse can be effectively tuned by the concentration and kind of electrolyte. The facile large-scale fabrication and good photoresponse demonstrate that 2D ultrathin InSe can be applied in high-performance optoelectronic devices.

MOF-Derived In2O3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors.

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In2O3)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In2O3-based PEC UV PDs for the first time. In2O3 microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In2O3 MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 1010 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In2O3 MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In2O3 holds great promise in high-performance PEC UV PDs.

High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets.

Two-dimensional (2D) bismuth oxychalcogenide (Bi2O2X, X refers to S, Se, and Te) is one type of rising semiconductor with excellent electrical transport properties, high photoresponse, and good air stability. However, the research on 2D Bi2O2S is limited. In this work, ultrathin Bi2O2S nanosheets are synthesized by a facile and eco-friendly chemical synthesis method at room temperature. The thickness and lateral sizes are 2-4 nm and 20-40 nm, respectively. The 2D ultrathin Bi2O2S nanosheets have a broad absorption spectrum from ultraviolet (UV) to near-infrared (NIR). Photoelectrochemical (PEC) photodetectors based on 2D Bi2O2S nanosheets are fabricated by a simple drop-casting method. The 2D Bi2O2S-based PEC photodetectors show excellent photodetection performance with a broad photoresponse spectrum from 365 to 850 nm, a high responsivity of 13.0 mA/W, ultrafast response times of 10/45 ms, and good long-term stability at a bias voltage of 0.6 V, which are superior to most 2D material-based PEC photodetectors. Further, the 2D Bi2O2S PEC photodetector can function as a high-performance self-powered broadband photodetector. Moreover, the photoresponse performance can be effectively tuned by the concentration and the kind of electrolyte. Our results demonstrate that 2D Bi2O2S nanosheets hold great promise for application in high-performance optoelectronic devices.

Diabetic Optic Neuropathy and Its Risk Factors in Chinese Patients With Diabetic Retinopathy.

Purpose: To investigate diabetic optic neuropathy (DON) prevalence and risk factors in Chinese diabetic retinopathy (DR) patients. Methods: This retrospective study included 1067 eyes (550 patients) that underwent ocular imaging. The diabetes duration, systolic blood pressure (SBP), hemoglobin A1c (HbA1c), and high-density lipoprotein (HDL) were also recorded simultaneously. Results: A total of 410 eyes with DON and 657 eyes without DON were included (38.4% DON prevalence). DON eyes were classified as having diabetic papillopathy (DP), optic disc neovascularization (NVD), anterior ischemic optic neuropathy (AION), or optic atrophy (OA). Proliferative DR eyes had a higher DON prevalence than nonproliferative DR eyes (P < 0.001). Diabetes duration, SBP, and HbA1c were higher in DON patients than in non-DON patients (all P < 0.001). Additionally, HDL was lower in patients with DON (0.74 ± 0.13 mM) than in those without DON (1.00 ± 0.24 mM, P < 0.001). HbA1c levels were greater in AION patients (10.00 ± 1.53% [85.76 ± 16.71 mmol/mol]) than in DP patients (8.78 ± 1.97% [72.45 ± 21.55 mmol/mol], P = 0.017); central foveal thickness (CFT) significantly varied among groups (P < 0.001). Increased age, diabetes duration, SBP, CFT, and DR severity were risk factors for DON; and increased HbA1c was a risk factor for NVD, AION, and OA (all P < 0.05). Conclusions: Our study results strengthen the argument that increased age, diabetes duration, SBP, CFT, DR severity, and HbA1c are all risk factors for DON in patients with DR.