Bridging the Green Gap: Monochromatic InP-Based Quantum-Dot-on-Chip LEDs with over 50% Color Conversion Efficiency.

Solid-state light-emitting diodes (LEDs) emit nearly monochromatic light, yet seamless tuning of emission color throughout the visible region remains elusive. Color-converting powder phosphors are therefore used for making LEDs with a bespoke emission spectrum, yet broad emission lines and low absorption coefficients compromise the formation of small-footprint monochromatic LEDs. Color conversion by quantum dots (QDs) can address these issues, but high-performance monochromatic LEDs made using QDs free of restricted, hazardous elements remain to be demonstrated. Here, we show green, amber, and red LEDs formed using InP-based QDs as on-chip color convertor for blue LEDs. Implementing QDs with near-unity photoluminescence efficiency yields a color conversion efficiency over 50% with little intensity roll-off and nearly complete blue light rejection. Moreover, as the conversion efficiency is mostly limited by package losses, we conclude that on-chip color conversion using InP-based QDs can provide spectrum-on-demand LEDs, including monochromatic LEDs that bridge the green gap.

Stimulated Emission and Lasing from Bulk CdSe Nanocrystals.

Nanocrystals with a size in the regime of vanishing quantum confinement, or bulk nanocrystals (BNCs), have emerged recently as viable solution processable optical gain materials in the green part of the spectrum. Here, we show that these properties can be extended to the crucial red region using CdSe BNCs. Through quantitative time-resolved spectroscopy, we can model these nanocrystals as bulk semiconductors, thereby revealing that the gain originates from an unbound electron-hole plasma state. The gain is broadband in nature and is not capped by Auger processes, but by a slower second-order recombination resulting in nanosecond gain lifetimes. Finally, optically pumped lasers under femtosecond pulsed and quasi-continuous wave operation are demonstrated using a photonic crystal surface emitting laser cavity, thereby stretching from 635 to 720 nm. Our results indicate that compositional variation can indeed provide spectral versatility to the BNC concept, while preserving the excellent gain metrics associated with it.

Two-Dimensional Electron-Hole Plasma in Colloidal Quantum Shells Enables Integrated Lasing Continuously Tunable in the Red Spectrum.

Combining integrated optical platforms with solution-processable materials offers a clear path toward miniaturized and robust light sources, including lasers. A limiting aspect for red-emitting materials remains the drop in efficiency at high excitation density due to non-radiative quenching pathways, such as Auger recombination. Next to this, lasers based on such materials remain ill characterized, leaving questions about their ultimate performance. Here, we show that colloidal quantum shells (QSs) offer a viable solution for a processable material platform to circumvent these issues. We first show that optical gain in QSs is mediated by a 2D plasma state of unbound electron-hole pairs, opposed to bound excitons, which gives rise to broad-band and sizable gain across the full red spectrum with record gain lifetimes and a low threshold. Moreover, at high excitation density, the emission efficiency of the plasma state does not quench, a feat we can attribute to an increased radiative recombination rate. Finally, QSs are integrated on a silicon nitride platform, enabling high spectral contrast, surface emitting, and TE-polarized lasers with ultranarrow beam divergence across the entire red spectrum from a small surface area. Our results indicate QS materials are an excellent materials platform to realize highly performant and compact on-chip light sources.

Formation of Colloidal In(As,P) Quantum Dots Active in the Short-Wave Infrared, Promoting Growth through Temperature Ramps.

Colloidal InAs quantum dots (QDs) are widely studied as a printable optoelectronic material for short-wave infrared (SWIR) that is not restricted by regulations on hazardous substances. Such applications, however, require synthetic procedures that yield QDs with adjustable sizes at the end of the reaction. Here, we show that such one-size-one-batch protocols can be realized through temperature profiles that involve a rapid transition from a lower injection temperature to a higher reaction temperature. By expediting the transition to the reaction temperature and reducing the overall synthesis concentration, we can tune QD sizes from 4.5 to 10 nm, the latter corresponding to a band gap transition at 1600 nm. We argue that the temperature ramps provide a more distinct separation between nucleation at low temperature and growth at high temperature such that larger QDs are obtained by minimizing the nucleation time. The synthetic procedures introduced here will strongly promote the development of a SWIR optoelectronic technology based on InAs QDs, while the use of temperature profiles to steer a colloidal synthesis can find applications well beyond the specific case of InAs QDs.