RESUMO
We have imaged boron nitride nanotubes with atomic scale resolution using scanning tunneling microscopy. While some nanotubes show the expected triangular lattice pattern, the majority of the nanotubes show unusual stripe patterns which break the underlying symmetry of the boron nitride lattice. We identify the origin of the symmetry breaking and demonstrate that conventional STM imaging analysis is inadequate for boron nitride nanotubes.
RESUMO
Bias dependent scanning tunneling microscopy and scanning tunneling spectroscopy have been used to characterize the influence of transverse electric fields on the electronic properties of boron-nitride nanotubes (BNNTs). We find experimental evidence for the theoretically predicted giant Stark effect. The observed giant Stark effect significantly reduces the band gap of BNNTs and thus greatly enhances the utility of BNNTs for nanoscale electronic, electromechanical, and optoelectronic applications.