A Grain Orientation-Independent Single-Step Saw Damage Gettering/Wet texturing Process for Efficient Silicon Solar Cells.

Improving electrical and optical properties is important in manufacturing high-efficiency solar cells. Previous studies focused on individual gettering and texturing methods to improve solar cell material quality and reduce reflection loss, respectively. This study presents a novel method called saw damage gettering with texturing that effectively combines both methods for multicrystalline silicon (mc-Si) wafers manufactured using the diamond wire sawing (DWS) method. Although mc-Si is not the Si material currently used in photovoltaic products, the applicability of this method using the mc-Si wafers as it contains all grain orientations is demonstrated. It utilizes saw damage sites on the wafer surfaces for gettering metal impurities during annealing. Additionally, it can crystallize amorphous silicon on wafer surfaces generated during the sawing process to allow conventional acid-based wet texturing. This texturing method and annealing for 10 min allow for the removal of metal impurities and effectively forms a textured DWS Si wafer. The results show that the open-circuit voltage (ΔVoc  = +29 mV), short-circuit current density (ΔJsc  = +2.5 mA cm-2 ), and efficiency (Δη = +2.1%) improved in the p-type passivated emitter and rear cells (p-PERC) manufactured using this novel method, as compared to those in the reference solar cells.

Monolithic Two-Terminal Perovskite/Perovskite/Silicon Triple-Junction Solar Cells with Open Circuit Voltage >2.8 V.

The efficiency of perovskite/silicon tandem solar cells has exceeded the previous record for III-V-based dual-junction solar cells. This shows the high potential of perovskite solar cells in multi-junction applications. Perovskite/perovskite/silicon triple-junction solar cells are now the next step to achieve efficient and low-cost multi-junction solar cells with an efficiency potential even higher than that for dual-junction solar cells. Here we present a perovskite/perovskite/silicon triple-junction solar cell with an open circuit voltage of >2.8 V, which is the record value reported for this structure so far. This is achieved through employing a gas quenching method for deposition of the top perovskite layer as well as optimization of interlayers between perovskite subcells. Moreover, for the measurement of our triple-junction solar cells, precise measurement procedures are implemented to ensure the reliability and accuracy of the reported values.

Perovskites fabricated on textured silicon surfaces for tandem solar cells.

The silicon surface texture significantly affects the current density and efficiency of perovskite/silicon tandem solar cells. However, only a few studies have explored fabricating perovskite on textured silicon and the effect of texture on perovskite films because of the limitations of solution processes. Here we produce conformal perovskite on textured silicon with a dry two-step conversion process that incorporates lead oxide sputtering and direct contact with methyl ammonium iodide. To separately analyze the influence of each texture structure on perovskite films, patterned texture, high-resolution photoluminescence (µ-PL), and light beam-induced current (µ-LBIC), 3D mapping is used. This work elucidates conformal perovskite on textured surfaces and shows the effects of textured silicon on the perovskite layers with high-resolution 3D mapping. This approach can potentially be applied to any type of layer on any type of substrate.

Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption.

In this paper we present a contactless transient carrier spectroscopy and imaging technique for traps in silicon. At each pixel, we fit the transient decay of the trap emission which allows us to obtain both the trap time constant and trap concentration. Here we show that this technique allows for high-resolution images. Furthermore, this technique also allows to discriminate between the presence of thermal donors or oxygen precipitates in as-grown wafers, without requiring a thermal donor killing step.

Distinguishing crystallization stages and their influence on quantum efficiency during perovskite solar cell formation in real-time.

Relating crystallization of the absorber layer in a perovskite solar cell (PSC) to the device performance is a key challenge for the process development and in-depth understanding of these types of high efficient solar cells. A novel approach that enables real-time photo-physical and electrical characterization using a graphite-based PSC is introduced in this work. In our graphite-based PSC, the device architecture of porous monolithic contact layers creates the possibility to perform photovoltaic measurements while the perovskite crystallizes within this scaffold. The kinetics of crystallization in a solution based 2-step formation process has been analyzed by real-time measurement of the external photon to electron quantum efficiency as well as the photoluminescence emission spectra of the solar cell. With this method it was in particular possible to identify a previously overlooked crystallization stage during the formation of the perovskite absorber layer. This stage has significant influence on the development of the photocurrent, which is attributed to the formation of electrical pathways between the electron and hole contact, enabling efficient charge carrier extraction. We observe that in contrast to previously suggested models, the perovskite layer formation is indeed not complete with the end of crystal growth.

UV Degradation and Recovery of Perovskite Solar Cells.

Although the power conversion efficiency of perovskite solar cells has increased from 3.81% to 22.1% in just 7 years, they still suffer from stability issues, as they degrade upon exposure to moisture, UV light, heat, and bias voltage. We herein examined the degradation of perovskite solar cells in the presence of UV light alone. The cells were exposed to 365 nm UV light for over 1,000 h under inert gas at <0.5 ppm humidity without encapsulation. 1-sun illumination after UV degradation resulted in recovery of the fill factor and power conversion efficiency. Furthermore, during exposure to consecutive UV light, the diminished short circuit current density (Jsc) and EQE continuously restored. 1-sun light soaking induced recovery is considered to be caused by resolving of stacked charges and defect state neutralization. The Jsc and EQE bounce-back phenomenon is attributed to the beneficial effects of PbI2 which is generated by the decomposition of perovskite material.

Micro-spectroscopy on silicon wafers and solar cells.

Micro-Raman (µRS) and micro-photoluminescence spectroscopy (µPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by µPLS and µRS. µPLS utilizes the carrier diffusion from a point excitation source and µRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by µRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance) of silicon. With the aim of evaluating technological process steps, Fano resonances in µRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while µPLS can show the micron-sized damage induced by the respective processes.