Scale-Enhanced Magnetism in Exfoliated Atomically Thin Magnetite Sheets.

The discovery of ferromagnetism in atomically thin layers at room temperature widens the prospects of 2D materials for device applications. Recently, two independent experiments demonstrated magnetic ordering in two dissimilar 2D systems, CrI3 and Cr2 Ge2 Te6 , at low temperatures and in VSe2 at room temperature, but observation of intrinsic room-temperature magnetism in 2D materials is still a challenge. Here a transition at room temperature that increases the magnetization in magnetite while thinning down the bulk material to a few atom-thick sheets is reported. DC magnetization measurements prove ferrimagnetic ordering with increased magnetization and density functional theory calculations ascribe their origin to the low dimensionality of the magnetite layers. In addition, surface energy calculations for different cleavage planes in passivated magnetite crystal agree with the experimental observations of obtaining 2D sheets from non-van der Waals crystals.

Two-Dimensional Boron Polymorphs for Visible Range Plasmonics: A First-Principles Exploration.

Recently discovered two-dimensional (2D) boron polymorphs, collectively tagged borophene, are all metallic with high free charge carrier concentration, pointing toward the possibility of supporting plasmons. Ab initio linear response computations of the dielectric function allow one to calculate the plasmon frequencies (ω) in the selected example structures of boron layers. The results show that the electrons in these sheets indeed mimic a 2D electron gas, and their plasmon dispersion in the small wavevector (q) limit accurately follows the signature dependence ω ∝ √q. The plasmon frequencies that are not damped by single-particle excitations do reach the near-infrared and even visible regions, making borophene the first material with 2D plasmons at such high frequencies, notably with no necessity for doping. The existence of several phases (polymorphs), with varying degree of metallicity and anisotropy, can further permit the fine-tuning of plasmon behaviors in borophene, potentially a tantalizing material with utility in nanoplasmonics.

Gate-Voltage Control of Borophene Structure Formation.

Boron nanostructures are easily charged but how charge carriers affect their structural stability is unknown. We combined cluster expansion methods with first-principles calculations to analyze the dependence of the preferred structure of two-dimensional (2D) boron, or "borophene", on charge doping controlled by a gate voltage. At a reasonable doping level of 3.12×1014  cm-2 , the hollow hexagon concentration in the ground state of 2D boron increases to 1/7 from 1/8 in its charge-neutral state. The numerical result for the dependence of hollow hexagon concentration on the doping level is well described by an analytical method based on an electron-counting rule. Aside from in-plane electronic bonding, the hybridization among out-of-plane boron orbitals is crucial for determining the relative stability of different sheets at a given doping level. Our results offer new insight into the stability mechanism of 2D boron and open new ways for the control of the lattice structure during formation.

Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation.

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C2xB1-xN1-x alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C (x < 0.25); and (b) the electronic structure of C2xB1-xN1-x can be further tuned not only with composition x, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C2xB1-xN1-x alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.

Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2.

Using a combination of Landau theoretical analysis and first-principles calculations, we establish a spontaneous symmetry breaking of the metallic state of the 1T monolayer of MoS2 that opens up a band gap and leads to an unexpected yet robust ferroelectricity with ordering of electric dipoles perpendicular to its plane. Central to the properties of this thinnest known ferroelectric is a strong coupling of conducting states with valley phonons that induce an effective electric field. The current in a semiconducting 1T-MoS2 channel can, thus, be controlled independently by changing its ferroelectric dipolar structure with a gate field, opening up a possibility of a class of nanoscale dipolectronic devices. Our analysis applies equally well to MoSe2, WS2, and WSe2, giving tunability in design of such devices based on two-dimensional chalcogenides.

Thermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe2.

We report the temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe2 in the range 77-700 K. We observed linear variation in the peak positions and widths of the bands arising from contributions of anharmonicity and thermal expansion. After characterization using atomic force microscopy and high-resolution transmission electron microscopy, the temperature coefficients of the Raman modes were determined. Interestingly, the temperature coefficient of the A(2)(2u) mode is larger than that of the A(1g) mode, the latter being much smaller than the corresponding temperature coefficients of the same mode in single-layer MoS2 and of the G band of graphene. The temperature coefficients of the two modes in single-layer MoSe2 are larger than those of the same modes in single-layer WSe2. We have estimated thermal expansion coefficients and temperature dependence of the vibrational frequencies of MoS2 and MoSe2 within a quasi-harmonic approximation, with inputs from first-principles calculations based on density functional theory. We show that the contrasting temperature dependence of the Raman-active mode A(1g) in MoS2 and MoSe2 arises essentially from the difference in their strain-phonon coupling.

Defining shapes of two-dimensional crystals with undefinable edge energies.

The equilibrium shape of crystals is a fundamental property of both aesthetic appeal and practical importance: the shape and its facets control the catalytic, light-emitting, sensing, magnetic and plasmonic behaviors. It is also a visible macro-manifestation of the underlying atomic-scale forces and chemical makeup, most conspicuous in two-dimensional (2D) materials of keen current interest. If the crystal surface/edge energy is known for different directions, its shape can be obtained by the geometric Wulff construction, a tenet of crystal physics; however, if symmetry is lacking, the crystal edge energy cannot be defined or calculated and thus its shape becomes elusive, presenting an insurmountable problem for theory. Here we show how one can proceed with auxiliary edge energies towards a constructive prediction, through well-planned computations, of a unique crystal shape. We demonstrate it for challenging materials such as SnSe, which is of C2v symmetry, and even AgNO2 of C1, which has no symmetry at all.

Magnetotransport in Graphene/Pb0.24Sn0.76Te Heterostructures: Finding a Way to Avoid Catastrophe.

While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb1-xSnxTe (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20 000 cm2/(V s) and a magnetoresistance approaching 100%, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/nonpolar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of behaviors in these materials.

Phase transitions of AlFeO3 and GaFeO3 from the chiral orthorhombic (Pna2(1)) structure to the rhombohedral (R3c) structure.

AlFeO(3) and GaFeO(3), which crystallize in a chiral orthorhombic (Pna2(1)) structure, transform to a rhombohedral (R3c) structure when subjected to ball-milling. There is a distinct difference between the transformations of AlFeO(3) and GaFeO(3). AlFeO(3) first transforms to an orthorhombic P2(1)2(1)2(1) structure followed by its transformation to the R3c structure, while GaFeO(3) goes directly to the R3c structure. The transformations have been characterized by X-ray diffraction and Raman spectroscopy. Magnetic properties of Pna2(1) and the transformed phases show significant differences. It is noteworthy that partial substitution of aluminum by gallium in AlFeO(3) as in Al(0.5)Ga(0.5)FeO(3) eliminates the intermediate P2(1)2(1)2(1) phase, causing direct transformation of the Pna2(1) structure to the R3c structure. All of the transformations are thermodynamically first-order associated with significant changes in volume. We have used first-principles simulations to determine the pressure-dependent properties of AlFeO(3) and GaFeO(3) in orthorhombic and corundum structures and have estimated the critical pressures for the structural phase transition between the two structures. On the basis of this information, we also comment on the differences in the behavior of AlFeO(3) and GaFeO(3) under ball-milling.

Substitution of copper atoms into defect-rich molybdenum sulfides and their electrocatalytic activity.

Studies on intercalation or substitution of atoms into layered two-dimensional (2D) materials are rapidly expanding and gaining significant consideration due to their importance in electronics, catalysts, batteries, sensors, etc. In this manuscript, we report a straightforward method to create sulphur (S) deficient molybdenum (Mo) sulfide (MoS2-x ) structures and substitute them with zerovalent copper (Cu) atoms using a colloidal synthesis method. The synthesized materials were studied using several techniques to understand the proportion and position of copper atoms and the effect of copper functionalization. Specifically, the impact of change in the ratio of Cu : S and the hydrogen evolution reaction (HER) activity of the derived materials were evaluated. This technique paves the way for the synthesis of various functionalized 2D materials with a significant impact on their physical and chemical behavior making them potential candidates for catalysis and several other applications such as energy storage and the development of numerous functional devices.

In Pursuit of 2D Materials for Maximum Optical Response.

Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and first-principles calculations, we determine the theoretical limit of the maximum optical response such as absorbance ( A) and reflectance ( R) in 2D materials and also conduct a computational survey to seek out those with best A and R in various frequency ranges, from mid-infrared to deep-ultraviolet. We find that 2D boron has broadband reflectance R > 99% for >100 layers, surpassing conventional thin films of bulk metals such as silver. Moreover, we identify 2D monolayer semiconductors with maximum response, for which we obtain quantitative estimates by calculating quasiparticle energies and accounting for excitonic effects by solving the Bethe-Salpeter equation. We found several monolayer semiconductors with absorbances ≳30% in different optical ranges, which are more than half of the maximum possible value, Alim = 1/2, for a freestanding 2D material. Our study predicts 2D materials which can potentially be used in ultrathin reflectors and absorbers for optoelectronic application in various frequency ranges.

Franck Condon shift assessment in 2D MoS2.

Optical spectroscopy (OS) techniques are often coupled with first-principles density functional theoretical (DFT) calculations for determining the precise influence of defects on the electronic and structural properties of two-dimensional (2D) transition metal dichalcogenides. Such calculations are carried out presuming there is little or no effect of vibrational transitions on the observed electronic spectrum. However, if the effect of change in vibrational energy (Franck Condon (FC) shift) associated with such a transition is large, it could possibly lead to a different origin for the observed peak. One such instance is the attribution of the 0.75 eV cathodoluminescence peak by Fabbri et al (2016 Nat. Commun. 7 13044) to an optical transition from an S vacancy level in the band gap, under the assumption that the FC shift is negligible. Here, by first principles constrained DFT calculations using hybrid HSE06 functional we show that this combined prediction of OS and DFT calculations is valid for 2D MoS2 since the FC shift associated with electronic transitions from a sulfur vacancy is indeed small ~28 meV. Based on our calculations we conclude that it is reasonable to make a direct connection between DFT calculations and optical spectroscopy techniques in this material, hence, establishing a one to one relation between defect related emission bands and electronic transitions from the defect levels.

The nature of the structural phase transition from the hexagonal (4H) phase to the cubic (3C) phase of silver.

The phase transition from the hexagonal 4H polytype of silver to the commonly known 3C (fcc) phase was studied in detail using x-ray diffraction, electron microscopy, differential scanning calorimetry and Raman spectroscopy. The phase transition is irreversible and accompanied by extensive microstructural changes and grain growth. Detailed scanning and isothermal calorimetric analysis suggests that it is an autocatalytic transformation. Though the calorimetric data suggest an exothermic first-order phase transition with an onset at 155.6 °C (for a heating rate of 2 K min(-1)) and a latent heat of 312.9 J g(-1), the microstructure and the electrical resistance appear to change gradually from much lower temperatures. The 4H phase shows a Raman active mode at 64.3 cm(-1) (at 4 K) that undergoes mode softening as the 4H → 3C transformation temperature is approached. A first-principles density functional theory calculation shows that the stacking fault energy of 4H-Ag increases monotonically with temperature. That 4H-Ag has a higher density of stacking faults than 3C-Ag, implies the metastability of the former at higher temperatures. Energetically, the 4H phase is intermediate between the hexagonal 2H phase and the 3C ground state, as indicated by the spontaneous transformation of the 2H to the 4H phase at -4 °C. Our data appear to indicate that the 4H-Ag phase is stabilized at reduced dimensions and thermally induced grain growth is probably responsible for triggering the irreversible transformation to cubic Ag.

A stable, quasi-2D modification of silver: optical, electronic, vibrational and mechanical properties, and first principles calculations.

We report the optical, electronic, vibrational and mechanical properties of a stable, anisotropic, hexagonal (4H) form of silver. First principles calculations based on density functional theory were used to simulate the phonon dispersion curves and electronic band structure of 4H-Ag. The phonon dispersion data at 0 K do not contain unstable phonon modes, thereby confirming that it is a locally stable structure. The Fermi surface of the 4H phase differs in a subtle way from that of the cubic phase. Experimental measurements indicate that, when compared to the commonly known face-centered cubic (3C) form of silver, the 4H-Ag form shows a 130-fold higher, strongly anisotropic, in-plane resistivity and a much lower optical reflectance with a pronounced surface plasmon contribution that imparts a distinctive golden hue to the material. Unlike common silver, the lower symmetry of the 4H-Ag structure allows it to be Raman active. Mechanically, 4H-Ag is harder, more brittle and less malleable. Overall, this novel, poorly metallic, anisotropic, darker and harder crystallographic modification of silver bears little resemblance to its conventional counterpart.

Multiferroic behavior in elemental selenium below 40 K: effect of electronic topology.

The quasi-one-dimensional, chiral crystal structure of Selenium has fascinating implications: we report simultaneous magnetic and ferroelectric order in single crystalline Se microtubes below ≈40 K. This is accompanied by a structural transition involving a partial fragmentation of the infinite chains without losing overall crystalline order. Raman spectral data indicate a coupling of magnons with phonons and electric field, while the dielectric constant shows a strong dependence on magnetic field. Our first-principles theoretical analysis reveals that this unexpected multiferroic behavior originates from Selenium being a weak topological insulator. It thus exhibits stable electronic states at its surface, and magnetism emerges from their spin polarization. Consequently, the broken two-fold rotational symmetry permits switchable polarization along its helical axis. We explain the observed magnetoelectric couplings using a Landau theory based on the coupling of phonons with spin and electric field. Our work opens up a new class of topological surface-multiferroics with chiral bulk structure.

Sensing behavior of atomically thin-layered MoS2 transistors.

Most of recent research on layered chalcogenides is understandably focused on single atomic layers. However, it is unclear if single-layer units are the most ideal structures for enhanced gas-solid interactions. To probe this issue further, we have prepared large-area MoS2 sheets ranging from single to multiple layers on 300 nm SiO2/Si substrates using the micromechanical exfoliation method. The thickness and layering of the sheets were identified by optical microscope, invoking recently reported specific optical color contrast, and further confirmed by AFM and Raman spectroscopy. The MoS2 transistors with different thicknesses were assessed for gas-sensing performances with exposure to NO2, NH3, and humidity in different conditions such as gate bias and light irradiation. The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light. Further, our ab initio DFT calculations on single-layer and bilayer MoS2 show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.

Novel hexagonal polytypes of silver: growth, characterization and first-principles calculations.

We report a study of the relative effects of dimensional and kinetic constraints on the stabilization of metastable, polytypic forms of metallic silver. We show that the hexagonal 4H polytype (hitherto observed only in size-constrained systems) can be produced in the form of bulk thin films by suitably slowing down the growth kinetics. Further, using extremely slow growth conditions, we have been successful in depositing a novel, two-dimensional, metastable polytype (2H) of silver, which is highly reactive (easily oxidized) and has a density 23% lower than normal silver. First-principles calculations based on density functional theory confirm that the 4H structure is relatively stable. However, local stability analysis via a determination of the phonon dispersion of the 2H structure reveals that it is only marginally stable with an energy surface that is rather flat or weakly varying with respect to many of the modes. This makes a large contribution to the configurational entropy and is probably the reason for the metastability of the observed 2H polytype with an unusually large lattice constant along the c-direction.