Robust 2D layered MXene matrix-boron carbide hybrid films for neutron radiation shielding.

Large-scale fabrication of neutron-shielding films with flexible or complex shapes is challenging. Uniform and high boron carbide (B4C) filler loads with sufficient workability are needed to achieve good neutron-absorption capacity. Here, we show that a two-dimensional (2D) Ti3C2Tx MXene hybrid film with homogeneously distributed B4C particles exhibits high mechanical flexibility and anomalous neutron-shielding properties. Layered and solution-processable 2D Ti3C2Tx MXene flakes serve as an ideal robust and flexible matrix for high-content B4C fillers (60 wt.%). In addition, the preparation of a scalable neutron shielding MXene/B4C hybrid paint is demonstrated. This composite can be directly integrated with various large-scale surfaces (e.g., stainless steel, glass, and nylon). Because of their low thickness, simple and scalable preparation method, and an absorption capacity of 39.8% for neutrons emitted from a 241Am-9Be source, the 2D Ti3C2Tx MXene hybrid films are promising candidates for use in wearable and lightweight applications.

Recent advances in metallic transition metal dichalcogenides as electrocatalysts for hydrogen evolution reaction.

Layered metallic transition metal dichalcogenides (MTMDs) exhibit distinctive electrical and catalytic properties to drive basal plane activity, and, therefore, they have emerged as promising alternative electrocatalysts for sustainable hydrogen evolution reactions (HERs). A key challenge for realizing MTMDs-based electrocatalysts is the controllable and scalable synthesis of high-quality MTMDs and the development of engineering strategies that allow tuning their electronic structures. However, the lack of a method for the direct synthesis of MTMDs retaining the structural stability limits optimizing the structural design for the next generation of robust electrocatalysts. In this review, we highlight recent advances in the synthesis of MTMDs comprising groups VB and VIB and various routes for structural engineering to enhance the HER catalytic performance. Furthermore, we provide insight into the potential future directions and the development of MTMDs with high durability as electrocatalysts to generate green hydrogen through water-splitting technology.

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length.

The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe2. The use of PtTe2 as an epitaxial template enables the lateral growth of monolayer MoS2 to achieve a PtTe2-MoS2 MSJ with the thinnest possible, seamless atomic interface. The synthesized lateral heterojunction enables the reduced dimensions of Schottky barriers and enhanced carrier injection compared to counterparts composed of a vertical 3D metal contact. Furthermore, facile position-selected growth of PtTe2-MoS2 MSJ arrays using conventional lithography can facilitate the design of device layouts with high processability, while providing low contact resistivity and ultrashort transfer length on wafer scales.

Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects.

As the elements of integrated circuits are downsized to the nanoscale, the current Cu-based interconnects are facing limitations due to increased resistivity and decreased current-carrying capacity because of scaling. Here, the bottom-up synthesis of single-crystalline WTe2 nanobelts and low- and high-field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top-down approach, the bottom-up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlO x capping layer follows an ideal pattern for Joule heating, far from edge scattering. High-field electrical measurements and self-heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching ≈100 MA cm-2, remarkably higher than those of conventional metals and other transition-metal chalcogenides, and sustain the highest electrical power per channel length (≈16.4 W cm-1) among the interconnect candidates. The results suggest superior robustness of WTe2 against high-bias sweep and its possible applicability in future nanoelectronics.