Influence of the Tensile Strain on Electron Transport of Ultra-Thin SiC Nanowires.

The influence of nanomechanical tensile behavior on electron transport is especially interesting for ultra-thin SiC nanowires (NWs) with different diameters. Our studies theoretically show that these NWs can hold stable electron transmission in some strain ranges and that stretching can enhance the electron transmission around the Fermi level (EF) at the strains over 0.5 without fracture for a single-atom SiC chain and at the strains not over 0.5 for thicker SiC NWs. For each size of SiC NW, the tensile strain has a tiny effect on the number of device density of states (DDOSs) peaks but can increase the values. Freshly broken SiC NWs also show certain values of DDOSs around EF. The maximum DDOS increases significantly with the diameter, but interestingly, the DDOS at EF shows little difference among the three sizes of devices in the late stage of the stretching. Essentially, high electron transmission is influenced by high DDOSs and delocalized electronic states. Analysis of electron localization functions (ELFs) indicates that appropriate tensile stress can promote continuous electronic distributions to contribute electron transport, while excessively large stretching deformation of SiC NWs would split electronic distributions and consequently hinder the movement of electrons. These results provide strong theoretical support for the use of ultra-thin SiC NWs in nano-sensors for functional and controllable electronic devices.

Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots.

A new approach to creating a new and locally nanostructured graphene-based material is reported. We studied the electric and structural properties of partially fluorinated graphene (FG) films obtained from an FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main force driving the changes. It was found that ion irradiation leads to the formation of locally thermally expanded FG and its cracking into nanoparticles with small (∼1.5-3 nm) graphene quantum dots (GQD), embedded in them. The bandgap of GQD was estimated as 1 -1.5 eV. A further developed approach was applied to correct the functional properties of printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.

Change in Magnetic Anisotropy at the Surface and in the Bulk of FINEMET Induced by Swift Heavy Ion Irradiation.

57Fe transmission and conversion electron Mössbauer spectroscopy as well as XRD were used to study the effect of swift heavy ion irradiation on stress-annealed FINEMET samples with a composition of Fe73.5Si13.5Nb3B9Cu1. The XRD of the samples indicated changes neither in the crystal structure nor in the texture of irradiated ribbons as compared to those of non-irradiated ones. However, changes in the magnetic anisotropy both in the bulk as well as at the surface of the FINEMET alloy ribbons irradiated by 160 MeV 132Xe ions with a fluence of 1013 ion cm-2 were revealed via the decrease in relative areas of the second and fifth lines of the magnetic sextets in the corresponding Mössbauer spectra. The irradiation-induced change in the magnetic anisotropy in the bulk was found to be similar or somewhat higher than that at the surface. The results are discussed in terms of the defects produced by irradiation and corresponding changes in the orientation of spins depending on the direction of the stress generated around these defects.

Redox response of actinide materials to highly ionizing radiation.

Energetic radiation can cause dramatic changes in the physical and chemical properties of actinide materials, degrading their performance in fission-based energy systems. As advanced nuclear fuels and wasteforms are developed, fundamental understanding of the processes controlling radiation damage accumulation is necessary. Here we report oxidation state reduction of actinide and analogue elements caused by high-energy, heavy ion irradiation and demonstrate coupling of this redox behaviour with structural modifications. ThO2, in which thorium is stable only in a tetravalent state, exhibits damage accumulation processes distinct from those of multivalent cation compounds CeO2 (Ce(3+) and Ce(4+)) and UO3 (U(4+), U(5+) and U(6+)). The radiation tolerance of these materials depends on the efficiency of this redox reaction, such that damage can be inhibited by altering grain size and cation valence variability. Thus, the redox behaviour of actinide materials is important for the design of nuclear fuels and the prediction of their performance.