Detalhe da pesquisa
1.
Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85thin film.
Nanotechnology
; 34(26)2023 Apr 12.
Artigo
Inglês
| MEDLINE | ID: mdl-36975182
2.
Diverse long-term potentiation and depression based on multilevel LiSiOxmemristor for neuromorphic computing.
Nanotechnology
; 34(47)2023 Sep 04.
Artigo
Inglês
| MEDLINE | ID: mdl-37586343
3.
A Self-Organizing Multi-Layer Agent Computing System for Behavioral Clustering Recognition.
Sensors (Basel)
; 23(12)2023 Jun 08.
Artigo
Inglês
| MEDLINE | ID: mdl-37420602
4.
A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory.
Sensors (Basel)
; 22(23)2022 Dec 01.
Artigo
Inglês
| MEDLINE | ID: mdl-36502074
5.
Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires.
Nano Lett
; 21(12): 5036-5044, 2021 Jun 23.
Artigo
Inglês
| MEDLINE | ID: mdl-34124910
6.
Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film.
Nanotechnology
; 33(7)2021 Nov 22.
Artigo
Inglês
| MEDLINE | ID: mdl-34731838
7.
Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement.
Nanotechnology
; 32(14): 145202, 2021 Apr 02.
Artigo
Inglês
| MEDLINE | ID: mdl-33321481
8.
Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes.
Nanotechnology
; 31(20): 205203, 2020 May 15.
Artigo
Inglês
| MEDLINE | ID: mdl-32018237
9.
Largely enhanced luminescence intensity and improved optical temperature sensing properties in CaWO4-La2(WO4)3: Er3+, Yb3+ via regulating cations composition.
J Mater Sci Mater Electron
; 31(21): 18755-18762, 2020.
Artigo
Inglês
| MEDLINE | ID: mdl-38624445
10.
Excellent thermal stability owing to Ge and C doping in Sb2Te-based high-speed phase-change memory.
Nanotechnology
; 29(50): 505710, 2018 Dec 14.
Artigo
Inglês
| MEDLINE | ID: mdl-30264733
11.
Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.
Nanotechnology
; 28(40): 405206, 2017 Oct 06.
Artigo
Inglês
| MEDLINE | ID: mdl-28895557
12.
Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material.
Proc Natl Acad Sci U S A
; 108(26): 10410-4, 2011 Jun 28.
Artigo
Inglês
| MEDLINE | ID: mdl-21670255
13.
GeSe ovonic threshold switch: the impact of functional layer thickness and device size.
Sci Rep
; 14(1): 6685, 2024 Mar 20.
Artigo
Inglês
| MEDLINE | ID: mdl-38509187
14.
Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive.
Materials (Basel)
; 17(3)2024 Jan 31.
Artigo
Inglês
| MEDLINE | ID: mdl-38591510
15.
Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping.
ACS Appl Mater Interfaces
; 16(14): 17778-17786, 2024 Apr 10.
Artigo
Inglês
| MEDLINE | ID: mdl-38534114
16.
Chalcogenide Ovonic Threshold Switching Selector.
Nanomicro Lett
; 16(1): 81, 2024 Jan 11.
Artigo
Inglês
| MEDLINE | ID: mdl-38206440
17.
Tuning the Crystallization Mechanism by Composition Vacancy in Phase Change Materials.
ACS Appl Mater Interfaces
; 16(12): 15023-15031, 2024 Mar 27.
Artigo
Inglês
| MEDLINE | ID: mdl-38498850
18.
An Artificial LiSiOx Nociceptor with Neural Blockade and Self-Protection Abilities.
ACS Appl Mater Interfaces
; 16(15): 19205-19213, 2024 Apr 17.
Artigo
Inglês
| MEDLINE | ID: mdl-38591860
19.
A Complicated Route from Disorder to Order in Antimony-Tellurium Binary Phase Change Materials.
Adv Sci (Weinh)
; 11(9): e2301021, 2024 Mar.
Artigo
Inglês
| MEDLINE | ID: mdl-38133500
20.
Efficient Spiking Neural Networks with Biologically Similar Lithium-Ion Memristor Neurons.
ACS Appl Mater Interfaces
; 16(11): 13989-13996, 2024 Mar 20.
Artigo
Inglês
| MEDLINE | ID: mdl-38441421