Electron Waiting Times in a Strongly Interacting Quantum Dot: Interaction Effects and Higher-Order Tunneling Processes.

Distributions of electron waiting times have been measured in several recent experiments and have been shown to provide complementary information compared with what can be learned from the electric current fluctuations. Existing theories, however, are restricted to either weakly coupled nanostructures or phase-coherent transport in mesoscopic conductors. Here, we consider an interacting quantum dot and develop a real-time diagrammatic theory of waiting time distributions that can treat the interesting regime, in which both interaction effects and higher-order tunneling processes are important. Specifically, we find that our quantum-mechanical theory captures higher-order tunneling processes at low temperatures, which are not included in a classical description, and which dramatically affect the waiting times by allowing fast tunneling processes inside the Coulomb blockade region. Our work paves the way for systematic investigations of temporal fluctuations in interacting quantum systems, for example close to a Kondo resonance or in a Luttinger liquid.

Real-Time Detection of Single Auger Recombination Events in a Self-Assembled Quantum Dot.

Auger recombination is a nonradiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time on the order of microseconds. Here, we use two-color laser excitation on the exciton and trion transition in resonance fluorescence on a single self-assembled quantum dot to monitor in real-time single quantum events of the Auger process. Full counting statistics on the random telegraph signal give access to the cumulants and demonstrate the tunability of the Fano factor from a Poissonian to a sub-Poissonian distribution by Auger-mediated electron emission from the dot. Therefore, the Auger process can be used to tune optically the charge carrier occupation of the dot by the incident laser intensity, independently from the electron tunneling from the reservoir by the gate voltage. Our findings are not only highly relevant for the understanding of the Auger process but also demonstrate the perspective of the Auger effect for controlling precisely the charge state in a quantum system by optical means.