Structural, mechanical, electronic and optical properties of biphenylene hydrogenation: a first-principles study.

Biphenylene networks typically exhibit a metallic electronic nature, while hydrogenation can open the band gap changing it to a semiconductor. This property makes hydrogenated biphenylene a promising candidate for use in semiconductor optoelectronic materials and devices. In this work, three representative configurations of hydrogenated biphenylene, denoted by α, ß and γ, were investigated. The structural, mechanical, electronic, and optical properties of these hydrogenated biphenylene configurations were calculated by first-principles calculations. Band gaps with HSE correction were 4.69, 4.42 and 4.39 eV for α, ß, and γ configurations, respectively. Among these three configurations, ß presents the best electronic performance and special elastic properties (negative Poisson's ratio), while γ exhibits the best elastic properties. In addition, we comprehensively analyze the mechanical properties of these configurations and provide evidence that hydrogenated biphenylene possibly exhibits a negative-Poisson's-ratio along the zigzag and armchair directions when hydrogen atoms are added to biphenylene in certain ways. Furthermore, although the electronic properties of γ are weaker than those of ß, they are also excellent. In addition, the binding energies of ß and γ are relatively lower, which indicates that ß and γ are more stable. Our findings demonstrate that the hydrogenated biphenylene is a promising material with significant application potential in optoelectronic devices.

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties.

Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K, as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, ß and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures, with higher concentration of holes accompanied by lower carrier mobility. Different concentrations of holes nh lead to different limits in the scattering process. When nh is lower than the value of around 1016 cm-3, deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when nh is higher than such a value. Finally, the absorption spectra shows that both α and ß phases have isotropic optical properties in the X- and Y-directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, a finding which will benefit the development of high efficiency emitters or solar cells.

Electronic and optical properties of hydrogen-terminated biphenylene nanoribbons: a first-principles study.

The electronic structures and optical properties of novel 2D biphenylene and hydrogen-terminated nanoribbons of different widths which are cut from a layer of biphenylene were explored via first-principles calculations. The findings of phonon computations demonstrate that such a biphenylene is dynamically stable and shows metallic properties. The crystal orbital Hamilton population analysis indicates that the tetra-ring local structure results in anisotropic mechanical properties. For 1D nanoribbons, their band gaps shrink, and a direct-indirect transition occurs in the band gap as the width increases, transforming the nanoribbon to endow them with metallic characteristics at a certain width. This is attributed to the weak coupling between the tetra-ring atoms, shrinking the direct band gap at the Y point in the Brillouin zone. Finally, the contribution of interband transitions to the dielectric function in 6-, 9-, and 12-armchair biphenylene nanoribbons (ABNRs) was identified. The lowest peak in the imaginary part of the dielectric function ε2 spectrum was mainly a contribution of a Γ-Γ transition. As the width of ABNR increases, the transitions in the x direction become stronger while the transition strength in the y direction is not significantly altered. This investigation extends the understanding of the electronic and optical properties of 2D biphenylene and 1D nanoribbons, which will benefit the practical applications of these materials in optoelectronics and electronics.

Screening effects on the field enhancement factor of zigzag graphene nanoribbon arrays: a first-principles study.

The field screening effect on the electronic and field-emission properties of zigzag graphene nanoribbons (ZGNRs) has been studied using first-principles calculations. We have systematically investigated the effects of inter-ribbon distance and ribbon width on the work function, field enhancement factor, band gap and edge magnetism of zigzag graphene nanoribbons (ZGNRs). It is found that the work function of ZGNRs increases rapidly as the inter-ribbon distance Dx increases, which is caused by the positive dipole at the edge of the ribbon. For a given Dx, the work function of ZGNRs decreases as the ribbon width W increases. The wider the ribbon, the stronger the effect of inter-ribbon distance on the work function. Using a simple linear interpolation model, we can obtain the work function of ZGNRs of any ribbon-width. In the case of Dx < W, the field enhancement factor increases rapidly as the inter-ribbon distance increases. As we further increase Dx, the enhancement factor increases slowly and then tends toward saturation. The inter-ribbon distance of ZGNRs can modulate the magnitude of the band gap and edge magnetism. These observations can all be explained by the screening effect.

A first-principles study of the electrically tunable band gap in few-layer penta-graphene.

The structural and electronic properties of bilayer (AA- and AB-stacked) and tri-layer (AAA-, ABA- and AAB-stacked) penta-graphene (PG) have been investigated in the framework of density functional theory. The present results demonstrate that the ground state energy in AB stacking is lower than that in AA stacking, whereas ABA stacking is found to be the most energetically favorable, followed by AAB and AAA stackings. All considered model configurations are found to be semiconducting, independent of the stacking sequence. In the presence of a perpendicular electric field, their band gaps can be significantly reduced and completely closed at a specific critical electric field strength, demonstrating a Stark effect. These findings show that few-layer PG will have tremendous opportunities to be applied in nanoscale electronic and optoelectronic devices owing to its tunable band gap.

The fracture behaviors of monolayer phosphorene with grain boundaries under tension: a molecular dynamics study.

The fracture behaviors of monolayer phosphorene (MP) with and without a grain boundary (GB) have been explored by molecular dynamics (MD) simulations. Firstly, in the case of perfect MP, fracture mostly happens on the bond in the zigzag direction when suffering random loading. With the existence of a GB, the crack propagates perpendicular to the GB in different ways under parallel tension to the GB, whereas it propagates along the GB under perpendicular tension to the GB. Then, we found that both the fracture strength and strain decrease with increasing temperature making fracture more likely at relatively high temperatures. Finally, we also found that, similar to graphene, the effect of strain rate on both the fracture strength and strain is not significant, demonstrating that MP is a typical brittle 2D material. Overall, our findings present a useful insight into utilizing phosphorene for mechanical design in electronic devices.

Magnetic evolution and anomalous Wilson transition in diagonal phosphorene nanoribbons driven by strain.

Inducing magnetism in phosphorene nanoribbons (PNRs) is critical for practical applications. However, edge reconstruction and Peierls distortion prevent PNRs from becoming highly magnetized. Using first-principles calculations, we find that relaxed oxygen-saturated diagonal-PNRs (O-d-PNRs) realize stable spin-polarized antiferromagnetic (AFM) coupling, and the magnetism is entirely localized at the saturated edges. The AFM state is quite stable under expansive and limited compressive strain. More importantly, not only does the irreversible Wilson transition occur when applying strain, but the nonmagnetic (NM) metal phase (a new ground state) becomes more stable than the AFM state when the compressive strain exceeds -4%. The related stability and transition mechanism are demonstrated by dual tuning of the geometric and electronic structures, which manifests as a geometric deviation from a honeycomb to an orthorhombic-like structure and formation of P-py bonding (P-pz nonbonding) from P-pz nonbonding (P-py antibonding) because of the increase of the proportion of the P-py (P-pz) orbital.

A first-principles study of the electronic structure and mechanical and optical properties of CaAlSiN3.

The mechanical properties, electronic structures and optical properties of CaAlSiN3 were investigated using the first-principles calculations. The elastic constants, bulk moduli, shear moduli, Young's moduli, and Poisson's ratio were obtained. These results indicate that CaAlSiN3 is mechanically stable and a relatively hard material. Moreover, this compound has an indirect band gap of ∼3.4 eV according to its band structure and density of states. The linear photon energy dependent dielectric functions and related optical properties including the refractive index, extinction coefficient, absorption spectrum, reflectivity, and energy loss spectrum were computed and discussed. It is shown that no sizable anisotropy is found in the optical properties of CaAlSiN3. The obtained structural estimation and some other results are in agreement with available experimental and theoretical data. This investigation is not only helpful for better understanding the electronic, mechanical and optical properties of CaAlSiN3, but also will open up the possibility of its use in device applications.

Si78 double cage structure and special optical properties.

We performed first-principles calculations to study the structural stability of Si78 clusters with or without hydrogen passivation. The calculations reveal that an endohedral double cage isomer is more stable than the diamond-like structure, whereas the opposite is found for the hydrogen passivated isomers. In particular, the hydrogenated double cage and diamond-like structure may display blue shifts to the visible and UV regions, respectively. The IR vibration spectra, ionization potential (IP) and electronic density-of-states of the clusters were calculated and discussed.

Investigation into the mechanical properties of single-walled carbon nanotube heterojunctions.

The mechanical properties of finite-length (6,0)/(8,0) single-walled carbon nanotube (SWCNT) heterojunctions with respect to different kinds of connection segments, either coaxial or bias, are investigated using molecular dynamics simulation calculations. It is found that the resulting significant deformation of structure and significant drop of stress under yielding strain is due to the strain localization. Moreover, the deformation is occurred below the heptagon ring in the thinner segment of the heterojunctions under tension at different temperatures, whereas under compression it occurs on the heptagon ring. The computed atomic bond number distribution and radius distribution function are applied to determine the deformed atomic structure. Finally, with increasing temperature, the yielding stresses decrease for both coaxial and bias heterojunctions under tension and compression, while the dependence of temperature on the Young's modulus of the heterojunctions is only observed in the case of tension.

The luminescence mechanism of ligand-induced interface states in silicon quantum dots.

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

Target molecular simulations of RecA family protein filaments.

Modeling of the RadA family mechanism is crucial to understanding the DNA SOS repair process. In a 2007 report, the archaeal RadA proteins function as rotary motors (linker region: I71-K88) such as shown in Figure 1. Molecular simulations approaches help to shed further light onto this phenomenon. We find 11 rotary residues (R72, T75-K81, M84, V86 and K87) and five zero rotary residues (I71, K74, E82, R83 and K88) in the simulations. Inclusion of our simulations may help to understand the RadA family mechanism.

A first-principles study of electronic and optical properties of the tetragonal phase of monolayer ZnS modulated by biaxial strain.

Modulation of the electronic and optical properties of two-dimensional (2D) materials is of great significance for their practical applications. Here, by using first-principles calculations, we study a tetragonal phase of monolayer ZnS, and explore its associated electronic and optical properties under biaxial strain. The results from phonon dispersion and molecular dynamics simulation demonstrate that the tetragonal phase of monolayer ZnS possesses a very high stability. The monolayer ZnS has a direct band gap of 4.20 eV. It changes to an indirect band gap under both compression and tension, exhibiting a decrease in band gap. However, the band gap decreases more slowly under compression compared to the tension process such that the direct band gap remains within -8%, demonstrating excellent endurance under pressure. Fortunately, tetragonal ZnS exhibits a good absorption ability in the ultraviolet (UV) range regardless of strain. Our research results enrich the understanding of monolayer ZnS, which is helpful for the design and application of optoelectronic devices using the material.

Influence of Group-IVA Doping on Electronic and Optical Properties of ZnS Monolayer: A First-Principles Study.

Element doping is a universal way to improve the electronic and optical properties of two-dimensional (2D) materials. Here, we investigate the influence of group-ⅣA element (C, Si, Ge, Sn, and Pb) doping on the electronic and optical properties of the ZnS monolayer with a tetragonal phase by using first-principles calculations. The results indicate that the doping atoms tend to form tetrahedral structures with neighboring S atoms. In these doped models, the formation energies are all negative, indicating that the formation processes of the doped models will release energy. The formation energy is smallest for C-doped ZnS and gradually increases with the metallicity of the doping element. The doped ZnS monolayer retains a direct band gap, with this band gap changing little in other element doping cases. Moreover, intermediate states are observed that are induced by the sp3 hybridization from the doping atoms and S atoms. Such intermediate states expand the optical absorption range into the visible spectrum. Our findings provide an in-depth understanding of the electronic and optical properties of the ZnS monolayer and the associated doping structures, which is helpful for application in optoelectronic devices.

Competitive diamond-like and endohedral fullerene structures of Si70.

We performed first-principles calculations to study the structure and stability of Si(70) cluster. The results from the density functional theory calculation with the Becke-Lee-Yang-Parr and B3LYP exchange-correlation functionals suggest that a diamond-like Si(70) isomer is the most stable structure, in contrast to endohedral fullerenes of Si(70). On the other hand, an endohedral fullerene of Si(16)@Si(54) was found to be slightly lower in energy than the diamond-like Si(70) if the Predew-Burke-Ernzerhof functional is used. Our calculation results suggest that around n = 70, the endohedral fullerene and diamond-like isomer are expected to be competitive. The calculated IR vibration spectra, ionization potential, and inverse mobilities were also calculated and discussed.

Structural and electronic properties of hydrogen adsorptions on BC3 sheet and graphene: a comparative study.

We have systematically investigated the effect of hydrogen adsorption on a single BC3 sheet as well as graphene using first-principles calculations. Specifically, a comparative study of the energetically favorable atomic configurations for both H-adsorbed BC3 sheets and graphene at different hydrogen concentrations ranging from 1/32 to 4/32 ML and 1/8 to 1 ML was undertaken. The preferred hydrogen arrangement on the single BC3 sheet and graphene was found to have the same property as that of the adsorbed H atoms on the neighboring C atoms on the opposite sides of the sheet. Moreover, at low coverage of H, the pattern of hydrogen adsorption on the BC3 shows a proclivity toward formation on the same ring, contrasting their behavior on graphene where they tend to form the elongated zigzag chains instead. Lastly, both the hydrogenated BC3 sheet and graphene exhibit alternation of semiconducting and metallic properties as the H concentration is increased. These results suggest the possibility of manipulating the bandgaps in a single BC3 sheet and graphene by controlling the H concentrations on the BC3 sheet and graphene.

Structural and electronic properties of graphene nanotube-nanoribbon hybrids.

The structural and electronic properties of a hybrid of an armchair graphene nanotube and a zigzag graphene nanoribbon are investigated by first-principles spin-polarized calculations. These properties strongly depend either on the nanotube location or on the spin orientation. The interlayer spacing, the transverse distance from the center of the ribbon and the stacking configuration affect the electronic structures. The antiferromagnetic configuration has a lower total energy than the ferromagnetic one. The interlayer atomic interactions between the two subsystems would change the low energy dispersions, open subband spacings, and induce more band-edge states. Moreover, such interactions create an energy gap and break the spin degeneracy in the antiferromagnetic configuration. The band-edge-state energies are sensitive to the nanotube location.

Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand.

Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si[double bond, length as m-dash]O ligands, single epoxide and coexisting Si[double bond, length as m-dash]O and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a single oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single Si[double bond, length as m-dash]O passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.

Electric Field-Tunable Structural Phase Transitions in Monolayer Tellurium.

Electronic properties of monolayer tellurium (Te) with three proposed atomic configurations under external electric field were investigated through first-principles calculations. The calculated results demonstrate that α-Te and γ-Te have indirect band gaps, whereas ß-Te, when no electric field is applied, can be considered as a direct semiconductor. An interesting structural change occurs in α- and γ-phase Te under a specific electric field strength, as does a change in structural chirality. In the presence of a perpendicular electric field, the band gaps can be modified and drawn close to 0 eV at a certain critical electric field strength. Before that, the band gaps of α-Te and γ-Te are nearly constant, while that of ß-Te shows a quadratic relationship to electric field strength. These findings not only enrich our understanding of the electronic properties of monolayer tellurium but also show that monolayer tellurium has tremendous potential in nanoscale electronic devices owing to its tunable band gaps.

A first-principles study of strain tuned optical properties in monolayer tellurium.

First-principles calculations are employed to study the optical properties of monolayer Te tuned by biaxial strain. Our results demonstrate that monolayer Te has strong absorption in the visible and ultraviolet regions, and that a structural transition occurs between the α-phase and the ß-phase under certain strain. In addition, there is significant optical anisotropy in α- and ß-Te, while γ-Te shows isotropic characteristics due to their different structural properties. Furthermore, strain has a significant impact on the optical properties. With increasing strain, the real and imaginary parts of the dielectric function exhibit redshift. In addition, the absorption spectrum is more likely to be excited under compressive strain rather than tensile strain in α- and ß-Te, while only slight differences are induced in γ-Te. These findings can not only enhance the understanding of two-dimensional tellurium, but also provide an effective way to tune the optical properties for potential application in optoelectronic devices.