Giant Dielectric Properties of W6+-Doped TiO2 Ceramics.

The effects of the sintering temperature and doping level concentration on the microstructures, dielectric response, and electrical properties of W6+-doped TiO2 (WTO) prepared via a solid-state reaction method were investigated. A highly dense microstructure, pure rutile-TiO2, and homogenously dispersed dopant elements were observed in all of the ceramic samples. The mean grain size increased as the doping concentration and sintering temperature increased. The presence of oxygen vacancies was studied. A giant dielectric permittivity (ε' ~ 4 × 104) and low tanδ (~0.04) were obtained in the WTO ceramic sintered at 1500 °C for 5 h. The ε' response at a low temperature was improved by increasing the doping level concentration. The giant ε' response in WTO ceramics can be described by the interfacial polarization at the interface between the semiconducting and insulating parts, which was supported by the impedance spectroscopy.

Dielectric Responses of (Zn0.33Nb0.67)xTi1-xO2 Ceramics Prepared by Chemical Combustion Process: DFT and Experimental Approaches.

The (Zn, Nb)-codoped TiO2 (called ZNTO) nanopowder was successfully synthesized by a simple combustion process and then the ceramic from it was sintered with a highly dense microstructure. The doped atoms were consistently distributed, and the existence of oxygen vacancies was verified by a Raman spectrum. It was found that the ZNTO ceramic was a result of thermally activated giant dielectric relaxation, and the outer surface layer had a slight effect on the dielectric properties. The theoretical calculation by using the density functional theory (DFT) revealed that the Zn atoms are energy preferable to place close to the oxygen vacancy (Vo) position to create a triangle shape (called the ZnVoTi defect). This defect cluster was also opposite to the diamond shape (called the 2Nb2Ti defect). However, these two types of defects were not correlated together. Therefore, it theoretically confirms that the electron-pinned defect-dipoles (EPDD) cannot be created in the ZNTO structure. Instead, the giant dielectric property of the (Zn0.33Nb0.67)xTi1-xO2 ceramics could be caused by the interfacial polarization combined with electron hopping between the Zn2+/Zn3+ and Ti3+/Ti4+ ions, rather than due to the EPDD effect. Additionally, it was also proved that the surface barrier-layer capacitor (SBLC) had a slight influence on the giant dielectric properties of the ZNTO ceramics. The annealing process can cause improved dielectric properties, which are properties with a huge advantage to practical applications and devices.

Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach.

This work considers the enhancement of the thermoelectric figure of merit, ZT, of SrTiO3 (STO) semiconductors by (La, Dy and N) co-doping. We have focused on SrTiO3 because it is a semiconductor with a high Seebeck coefficient compared to that of metals. It is expected that SrTiO3 can provide a high power factor, because the capability of converting heat into electricity is proportional to the Seebeck coefficient squared. This research aims to improve the thermoelectric performance of SrTiO3 by replacing host atoms by La, Dy and N atoms based on a theoretical approach performed with the Vienna Ab Initio Simulation Package (VASP) code. Here, undoped SrTiO3, Sr0.875La0.125TiO3, Sr0.875Dy0.125TiO3, SrTiO2.958N0.042, Sr0.750La0.125Dy0.125TiO3 and Sr0.875La0.125TiO2.958N0.042 are studied to investigate the influence of La, Dy and N doping on the thermoelectric properties of the SrTiO3 semiconductor. The undoped and La-, Dy- and N-doped STO structures are optimized. Next, the density of states (DOS), band structures, Seebeck coefficient, electrical conductivity per relaxation time, thermal conductivity per relaxation time and figure of merit (ZT) of all the doped systems are studied. From first-principles calculations, STO exhibits a high Seebeck coefficient and high figure of merit. However, metal and nonmetal doping, i.e., (La, N) co-doping, can generate a figure of merit higher than that of undoped STO. Interestingly, La, Dy and N doping can significantly shift the Fermi level and change the DOS of SrTiO3 around the Fermi level, leading to very different thermoelectric properties than those of undoped SrTiO3. All doped systems considered here show greater electrical conductivity per relaxation time than undoped STO. In particular, (La, N) co-doped STO exhibits the highest ZT of 0.79 at 300 K, and still a high value of 0.77 at 1000 K, as well as high electrical conductivity per relaxation time. This renders it a viable candidate for high-temperature applications.

Effects of Sintering Conditions on Giant Dielectric and Nonlinear Current-Voltage Properties of TiO2-Excessive Na1/2Y1/2Cu3Ti4.1O12 Ceramics.

The effects of the sintering conditions on the phase compositions, microstructure, electrical properties, and dielectric responses of TiO2-excessive Na1/2Y1/2Cu3Ti4.1O12 ceramics prepared by a solid-state reaction method were investigated. A pure phase of the Na1/2Y1/2Cu3Ti4.1O12 ceramic was achieved in all sintered ceramics. The mean grain size slightly increased with increasing sintering time (from 1 to 15 h after sintering at 1070 °C) and sintering temperature from 1070 to 1090 °C for 5 h. The primary elements were dispersed in the microstructure. Low dielectric loss tangents (tan δ~0.018-0.022) were obtained. Moreover, the dielectric constant increased from ε'~5396 to 25,565 upon changing the sintering conditions. The lowest tan δ of 0.009 at 1 kHz was obtained. The electrical responses of the semiconducting grain and insulating grain boundary were studied using impedance and admittance spectroscopies. The breakdown voltage and nonlinear coefficient decreased significantly as the sintering temperature and time increased. The presence of Cu+, Cu3+, and Ti3+ was examined using X-ray photoelectron spectroscopy, confirming the formation of semiconducting grains. The dielectric and electrical properties were described using Maxwell-Wagner relaxation, based on the internal barrier layer capacitor model.

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic.

The Mg2+/Ta5+ codoped rutile TiO2 ceramic with a nominal composition (Mg1/3Ta2/3)0.01Ti0.99O2 was synthesized using a conventional solid-state reaction method and sintered at 1400 °C for 2 h. The pure phase of the rutile TiO2 structure with a highly dense microstructure was obtained. A high dielectric permittivity (2.9 × 104 at 103 Hz) with a low loss tangent (<0.025) was achieved in the as-sintered ceramic. After removing the outer surface, the dielectric permittivity of the polished ceramic increased from 2.9 × 104 to 6.0 × 104, while the loss tangent also increased (~0.11). The dielectric permittivity and loss tangent could be recovered to the initial value of the as-sintered ceramic by annealing the polished ceramic in air. Notably, in the temperature range of -60-200 °C, the dielectric permittivity (103 Hz) of the annealed ceramic was slightly dependent (<±4.4%), while the loss tangent was very low (0.015-0.036). The giant dielectric properties were likely contributed by the insulating grain boundaries and insulative surface layer effects.

Influences of Sr2+ Doping on Microstructure, Giant Dielectric Behavior, and Non-Ohmic Properties of CaCu3Ti4O12/CaTiO3 Ceramic Composites.

The microstructure, dielectric response, and nonlinear current-voltage properties of Sr2+-doped CaCu3Ti4O12/CaTiO3 (CCTO/CTO) ceramic composites, which were prepared by a solid-state reaction method using a single step from the starting nominal composition of CCTO/CTO/xSrO, were investigated. The CCTO and CTO phases were detected in the X-ray diffraction patterns. The lattice parameter increased with increasing Sr2+ doping concentration. The phase compositions of CCTO and CTO were confirmed by energy-dispersive X-ray spectroscopy with elemental mapping in the sintered ceramics. It can be confirmed that most of the Sr2+ ions substituted into the CTO phase, while some minor portion substituted into the CCTO phase. Furthermore, small segregation of Cu-rich was observed along the grain boundaries. The dielectric permittivity of the CCTO/CTO composite slightly decreased by doping with Sr2+, while the loss tangent was greatly reduced. Furthermore, the dielectric properties in a high-temperature range of the Sr2+-doped CCTO/CTO ceramic composites can be improved. Interestingly, the nonlinear electrical properties of the Sr2+-doped CCTO/CTO ceramic composites were significantly enhanced. The improved dielectric and nonlinear electrical properties of the Sr2+-doped CCTO/CTO ceramic composites were explained by the enhancement of the electrical properties of the internal interfaces.

The Primary Origin of Excellent Dielectric Properties of (Co, Nb) Co-Doped TiO2 Ceramics: Electron-Pinned Defect Dipoles vs. Internal Barrier Layer Capacitor Effect.

(Co, Nb) co-doped rutile TiO2 (CoNTO) nanoparticles with low dopant concentrations were prepared using a wet chemistry method. A pure rutile TiO2 phase with a dense microstructure and homogeneous dispersion of the dopants was obtained. By co-doping rutile TiO2 with 0.5 at.% (Co, Nb), a very high dielectric permittivity of ε' ≈ 36,105 and a low loss tangent of tanδ ≈ 0.04 were achieved. The sample-electrode contact and resistive outer-surface layer (surface barrier layer capacitor) have a significant impact on the dielectric response in the CoNTO ceramics. The density functional theory calculation shows that the 2Co atoms are located near the oxygen vacancy, creating a triangle-shaped 2CoVoTi complex defect. On the other hand, the substitution of TiO2 with Nb atoms can form a diamond-shaped 2Nb2Ti complex defect. These two types of complex defects are far away from each other. Therefore, the electron-pinned defect dipoles cannot be considered the primary origins of the dielectric response in the CoNTO ceramics. Impedance spectroscopy shows that the CoNTO ceramics are electrically heterogeneous, comprised of insulating and semiconducting regions. Thus, the dielectric properties of the CoNTO ceramics are attributed to the interfacial polarization at the internal insulating layers with very high resistivity, giving rise to a low loss tangent.

Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of CaCu3Ti4O12 Ceramics Substituted by Al3+ and Ta5+/Nb5.

The effects of charge compensation on dielectric and electrical properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics (x = 0-0.05) prepared by a solid-state reaction method were studied based on the configuration of defect dipoles. A single phase of CaCu3Ti4O12 was observed in all ceramics with a slight change in lattice parameters. The mean grain size of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics was slightly smaller than that of the undoped ceramic. The dielectric loss tangent can be reduced by a factor of 13 (tanδ ~0.017), while the dielectric permittivity was higher than 104 over a wide frequency range. Impedance spectroscopy showed that the significant decrease in tanδ was attributed to the highly increased resistance of the grain boundary by two orders of magnitude. The DFT calculation showed that the preferential sites of Al and Nb/Ta were closed together in the Ti sites, forming self-charge compensation, and resulting in the enhanced potential barrier height at the grain boundary. Therefore, the improved dielectric properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics associated with the enhanced electrical properties of grain boundaries. In addition, the non-Ohmic properties were also improved. Characterization of the grain boundaries under a DC bias showed the reduction of potential barrier height at the grain boundary. The overall results indicated that the origin of the colossal dielectric properties was caused by the internal barrier layer capacitor structure, in which the Schottky barriers at the grain boundaries were formed.

Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics.

Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε' > 104) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε' continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε' value of approximately 7.55 × 104 and an extremely low tanδ value of approximately 0.007 at 103 Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu3+/Nb5+ co-doped TiO2 (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε' values between the temperatures of -60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO6 microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti3+ ions formed by Nb5+ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.

Ag Nanoparticle-Incorporated Natural Rubber for Mechanical Energy Harvesting Application.

The energy conversion performance of the triboelectric nanogenerator (TENG) is a function of triboelectric charges which depend on the intrinsic properties of materials to hold charges or the dielectric properties of triboelectric materials. In this work, Ag nanoparticles were synthesized and used to incorporate into natural rubber (NR) in order to enhance the dielectric constant for enhancing the electrical output of TENG. It was found that the size of Ag nanoparticles was reduced with the increasing CTAB concentration. Furthermore, the CTAB surfactant helped the dispersion of metallic Ag nanoparticles in the NR-insulating matrix, which promoted interfacial polarization that affected the dielectric properties of the NR composite. Ag nanoparticle-incorporated NR films exhibited an improved dielectric constant of up to almost 40% and an enhanced TENG performance that generated the highest power density of 262.4 mW/m2.

Significantly Improved Colossal Dielectric Properties and Maxwell-Wagner Relaxation of TiO2-Rich Na1/2Y1/2Cu3Ti4+xO12 Ceramics.

In this work, the colossal dielectric properties and Maxwell-Wagner relaxation of TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 (x = 0-0.2) ceramics prepared by a solid-state reaction method are investigated. A single phase of Na1/2Y1/2Cu3Ti4O12 is achieved without the detection of any impurity phase. The highly dense microstructure is obtained, and the mean grain size is significantly reduced by a factor of 10 by increasing Ti molar ratio, resulting in an increased grain boundary density and hence grain boundary resistance (Rgb). The colossal permittivities of ε' ~ 0.7-1.4 × 104 with slightly dependent on frequency in the frequency range of 102-106 Hz are obtained in the TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 ceramics, while the dielectric loss tangent is reduced to tanδ ~ 0.016-0.020 at 1 kHz due to the increased Rgb. The semiconducting grain resistance (Rg) of the Na1/2Y1/2Cu3Ti4+xO12 ceramics increases with increasing x, corresponding to the decrease in Cu+/Cu2+ ratio. The nonlinear electrical properties of the TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 ceramics can also be improved. The colossal dielectric and nonlinear electrical properties of the TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 ceramics are explained by the Maxwell-Wagner relaxation model based on the formation of the Schottky barrier at the grain boundary.

Enhanced dielectric properties of PVDF polymer nanocomposites: A study on gold-decorated, surface-modified multiwalled carbon nanotubes.

The integration of surface-modified multiwalled carbon nanotubes (fMWCNTs) into polymer nanocomposites has been extensively studied for their potential to enhance dielectric properties. This study, however, pioneers the use of a novel hybrid filler comprising fMWCNTs coated with metal nanoparticles, specifically aimed at augmenting the dielectric performance of polymers. In our research, poly(vinylidene fluoride) (PVDF) nanocomposite films were synthesized using fMWCNTs with a diameter of ∼6-9 nm and a length of 5 µm, adorned with gold nanoparticles (nAu) of ∼5.4 ± 0.9 nm via an adapted Turkevich method. Comprehensive analyses were conducted on nAu-fMWCNTs hybrid powder and their nanocomposites in PVDF with varying filler concentrations, confirming the formation of nAu-fMWCNTs with a weight ratio of 1.1 : 98.9. Three-phase percolative nanocomposites were produced by dispersing the hybrid filler in N,N-dimethylformamide, facilitated by interactions between the negative charge of nAu-fMWCNTs (zeta potential of âˆ¼ -40.43 ± 0.46 mV) and polar phases of PVDF. This was verified through zeta potential and Fourier-transform infrared spectroscopy analyses. The dielectric permittivity (ε') of the nanocomposites significantly increased from 17.8 to 524.8 (at 1 kHz) with filler loadings from 0.005 to 0.01 vol%, while the dielectric loss tangent (tanδ) showed a minor increase from 0.05 to 1.18. These enhancements are attributed to the elevated permittivity of nAu-fMWCNTs hybrid powder, PVDF's transition to the ß-phase, and interfacial polarization effects. The restrained growth of nAu on fMWCNTs and the inhibition of conductive pathways in the polymer matrix contributed to the low tanδ values.

Tuning enhanced dielectric properties of (Sc3+-Ta5+) substituted TiO2 via insulating surface layers.

In this study, we achieved significantly enhanced giant dielectric properties (EG-DPs) in Sc3+-Ta5+ co-doped rutile-TiO2 (STTO) ceramics with a low loss tangent (tanδ ≈ 0.05) and high dielectric permittivity (ε' ≈ 2.4 × 104 at 1 kHz). We focused on investigating the influence of insulating surface layers on the nonlinear electrical properties and the giant dielectric response. Our experimental observations revealed that these properties are not directly correlated with the grain size of the ceramics. Furthermore, first-principles calculations indicated the preferred formation of complex defects, specifically 2Ta diamond and 2ScVo triangular-shaped complexes, within the rutile structure of STTO; however, these too showed no correlation. Consequently, the non-Ohmic properties and EG-DPs of STTO ceramics cannot be predominantly attributed to the grain boundary barrier layer capacitor model or to electron-pinned defect-dipole effects. We also found that the semiconducting grains in STTO ceramics primarily arise from Ta5+, while Sc3+ plays a crucial role in forming a highly resistive outer surface layer. Notably, a significant impact of grain boundary resistance on the nonlinear electrical properties was observed only at lower co-dopant concentrations in STTO ceramics (1 at%). The combination of low tanδ values and high ε' in these ceramics is primarily associated with a highly resistive, thin outer-surface layer, which substantially influences their non-Ohmic characteristics.

Chromium (VI) removal by magnetite nanoparticles immobilized with extracellular polymeric substances extracted from Lysinibacillus sp. WH.

Magnetite nanoparticles (nano-Fe3O4) and nano-Fe3O4 immobilized with bacterial extracellular polymeric substances (EPSs) extracted from Lysinibacillus sp. WH (Fe3O4/bact) were comparatively studied for the removal of Cr (VI) ions from aqueous solution in batch study. The objectives were to explore the removal of Cr (VI) efficiency by nano-Fe3O4 and Fe3O4/bact under varying bacterial concentrations at a range of acidic pH. Results indicated that 150 ppm Cr (VI) could be effectively removed by 5 g/L of nano-Fe3O4 at pH 4, with the efficiency of 89.2 ± 12%. The equilibrium time, determined by a pseudo-second-order model (R2 = 0.9983), was after 5 h, indicating chemical adsorption. The Cr (VI) removal by the nano-Fe3O4 immobilized with bacterial EPS was effective and steady under a wide range of acidic conditions although bacterial EPS has an alkaline nature. Here, we are the first to demonstrate that Cr (VI) removal efficiency by different concentrations of EPS was not significantly different, suggesting EPS concentration is possibly not the most crucial factor to be optimized for Cr (VI) removal in the future. This study shows the potential application of nano-Fe3O4 immobilized with bacterial EPS for wastewater treatment. PRACTITIONER POINTS: The equilibrium time for magnetite nanoparticles to remove Cr (VI) is 5 h, suggesting chemical adsorption. The Cr (VI) removal efficiency of either magnetite nanoparticles or bacterial EPS is stable under a wide range of acidic conditions. Magnetite nanoparticles immobilized with bacterial EPS extracted from Lysinibacillus sp. WH has a potential application for Cr (VI) removal in wastewater.

Advanced humidity sensing properties of CuO ceramics.

This research explores the capacitive humidity sensing properties of CuO ceramic, selected for its simplicity as an oxide and ease of fabrication, in addition to its remarkable dielectric properties. The CuO sample was fabricated by sintering at 980 °C for 5 h. A microstructure with a relative density of 88.9% was obtained. X-ray diffraction confirmed the formation of a pure CuO phase. Broadband dielectric spectroscopy revealed that the observed giant dielectric properties at room temperature (RT) were attributed to extrinsic effects, including the internal barrier layer capacitor and sample-electrode contact effects. A key focus of this study was to examine the giant dielectric properties of CuO ceramic as a function of relative humidity (RH) at RT and frequencies of 102 and 103 Hz. It was observed that the capacitance of CuO continuously increased with rising RH levels, ranging from 30 to 95%. Notably, the maximum hysteresis errors were constrained to 2.3 and 3.3% at 102 and 103 Hz, respectively. Additionally, the CuO ceramic demonstrated very fast response and recovery times, approximately 2.8 and 0.95 min, respectively. The repeatability of the humidity response of the capacitance was also established. Overall, this research highlights the high potential of CuO as a giant dielectric material for application in humidity sensors.

Pioneering dielectric materials of Sn-doped Nb0.025Ti0.975O2 ceramics with excellent temperature and humidity stability for advanced ceramic capacitors.

In this study, the rutile TiO2 system, widely acclaimed for its superior properties, was enhanced through co-doping with isovalent Sn4+ ions and 2.5% Nb5+ donor ions, diverging from traditional acceptor doping practices. This novel doping strategy was implemented by employing a conventional solid-state reaction method, resulting in the synthesis of Sn-doped Nb0.025Ti0.975O2 (Sn-NTO) ceramics. These ceramics demonstrated remarkable dielectric characteristics, with a high dielectric constant (ε') ranging from ∼27 000 to 34 000 and an exceptionally low loss tangent between 0.005 and 0.056 at ∼25 °C and 1 kHz. Notably, the temperature coefficient of ε', , aligned with the stringent specifications for X7/8/9R capacitors. Furthermore, the Sn-NTO ceramics exhibited a stable Cp response across various frequencies within a humidity range of 50 to 95% RH, with ΔCp (%) values within ±0.3%, and no hysteresis loop was detected, suggesting the absence of water molecule adsorption and desorption during humidity assessments. This behavior is primarily attributed to the effective suppression of oxygen vacancy formation by the Sn4+ ions, which also affects the grain growth diffusion process in the Sn-NTO ceramics. The observed heterogeneous electrical responses between semiconducting grains and insulating grain boundaries in these polycrystalline ceramics are attributed to the internal barrier layer capacitor effect.

Enhanced humidity sensing properties of Ta2O5 and ITO doped rutile-TiO2 porous ceramics.

In this study, we investigated the humidity sensing properties of TiO2-based ceramics doped with tantalum pentoxide (Ta2O5) and indium tin oxide (ITO). Pure TiO2, 1%Ta-doped TiO2 (1%TTO), 1%ITO-doped TiO2 (1%ISTO), and 1%(Ta2O5 + ITO) co-doped TiO2 (1%ISTTO) ceramic samples were obtained by sintering at 1200 °C for 3 h. The rutile phase was observed in all samples. The lattice parameters of the single and co-doped samples were larger than those of pure TiO2, confirming the substitution of dopants. Porosity was observed in all ceramics. The mean grain sizes of all doped samples were significantly reduced compared to undoped TiO2. A homogeneous element dispersion was observed in the 1%TTO and 1%ISTTO ceramics, while segregation particles of related In-rich elements was observed in the 1%ISTO ceramic. Giant dielectric properties were not achieved in any samples due to the porosity. Nevertheless, excluding the undoped TiO2, the dielectric properties of all porous ceramics varied significantly with changes in humidity. The 1%ISTTO ceramic demonstrated superior humidity sensing properties, including a low maximum hysteresis error of 3.6% at 102 Hz. In contrast, the 1% TTO and 1% ISTO ceramics showed higher maximum hysteresis errors of 7.2% and 19.8%, respectively. Notably, the response and recovery times were 7.05 ± 0.18 and 2.48 ± 0.39 min, respectively, with good repeatability. This improvement is likely due to the synergistic effect of oxygen vacancies and Ta Ti · defects on the surface, enhancing the humidity sensing properties of the 1% ISTTO ceramic, coupled with its optimal microstructure due to its lowest porosity and grain size.

Photoinduced charge generation of nanostructured carbon derived from human hair biowaste for performance enhancement in polyvinylidene fluoride based triboelectric nanogenerator.

Carbon nanostructures derived from human hair biowaste are incorporated into polyvinylidene fluoride (PVDF) polymer to enhance the energy conversion performance of a triboelectric nanogenerator (TENG). The PVDF filled with activated carbon nanomaterial from human hair (AC-HH) exhibits improved surface charge density and photoinduced charge generation. These remarkable properties are attributed to the presence of graphene-like nanostructures in AC-HH, contributing to the augmented performance of PVDF@AC-HH TENG. The correlation of surface morphologies, surface charge potential, charge capacitance properties, and TENG electrical output of the PVDF composites at various AC-HH loading is studied and discussed. Applications of the PVDF@AC-HH TENG as a power source for micro/nanoelectronics and a movement sensor for detecting finger gestures are also demonstrated. The photoresponse property of the fabricated TENG is demonstrated and analyzed in-depth. The analysis indicates that the photoinduced charge carriers originate from the conductive reduced graphene oxide (rGO), contributing to the enhanced surface charge density of the PVDF composite film. This research introduces a novel approach to enhancing TENG performance through the utilization of carbon nanostructures derived from human biowaste. The findings of this work are crucial for the development of innovative energy-harvesting technology with multifunctionality, including power generation, motion detection, and photoresponse capabilities.

DFT calculations and giant dielectric responses in (Ni1/3Nb2/3)xTi1-xO2.

The origins of dielectric responses in Ni2+ and Nb5+ co-doped TiO2 were explored considering intrinsic and extrinsic effects. DFT calculations demonstrated that Ni2+ doping induced oxygen vacancies, while Nb5+ doping generated free electrons. Theoretical predictions indicated complex defect dipoles forming in the rutile structure, contributing to overall dielectric responses. Theoretical calculations also showed a possible linear alignment of Ni2+-2Nb5+ without oxygen vacancies, especially in high doping concentrations. Experimentally, (Ni1/3Nb2/3)xTi1-xO2 ceramics (x = 1%, 2.5%, and 10%) were synthesized. The substantial dielectric response at room temperature, attributed to factors like defect dipoles and grain boundary/surface barrier layer capacitor (GBLC/SBLC) effects, increased with higher doping levels. However, in a temperature range where GBLC/SBLC effects were suppressed, the dielectric response decreased with increased doping, likely due to self-charge compensation between Ni2+-2Nb5+. Notably, (Ni1/3Nb2/3)xTi1-xO2 with x = 2.5% exhibited a high dielectric permittivity of 104 and a low loss tangent of 0.029 at 1 kHz. Moreover, the dielectric permittivity changed by less than ±15% (compared to 25 °C) at 150 °C. This work provides an understanding of the origins of dielectric responses in co-doped TiO2 and optimizes the doping concentration to achieve the best dielectric performance.

Extremely reduced loss tangent with retaining ultra high dielectric permittivity in Mg2+-doped La1.9Sr0.1NiO4 ceramics.

An extremely reduced loss tangent while retaining ultrahigh dielectric permittivity can be successfully obtained in La1.9Sr0.1NiO4 ceramics by doping with Mg2+ ions. A single phase of La1.9Sr0.1NiO4 was detected in all the sintered ceramics, while the lattice parameters increased with increasing doping concentration, indicating that Mg2+ ions can enter the Ni2+ sites. A highly dense microstructure is achieved. Microstructural analysis revealed that Mg2+ ions disperse well in the microstructure of La1.9Sr0.1NiO4 ceramics. Interestingly, ultra-high dielectric permittivity of approximately 8.11 × 105 at 1 kHz is achieved in the La1.9Sr0.1Ni0.6Mg0.4O4 ceramic, while the loss tangent is significantly reduced by two orders of magnitude compared to the undoped La1.9Sr0.1NiO4 ceramic. The DC conductivity significantly decreased by three orders of magnitude. The giant dielectric responses are described by Maxwell-Wagner polarization and small polaron hopping mechanisms. Thus, the significant reduction in the loss tangent can be attributed to the significantly enhanced resistance of the grain boundaries.