Silicon on Insulator MESFETs for RF Amplifiers.

CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6µm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz. There is no degradation in device performance up to its breakdown voltage, which greatly exceeds that of CMOS devices on the same process. Other figures of merit of relevance to RF front-end design are presented, including the maximum stable gain and noise figure. An accurate representation of the device in SPICE has been developed using the commercially available TOM3 model. Using the SOI MESFET model, a source degenerated low noise RF amplifier targeting operation near 1GHz has been designed. The amplifier was fabricated on a PCB board and operates at 940MHz with a minimum NF of 3.8dB and RF gain of 9.9dB while only consuming 5mW of DC power.

Electromigration current rectification in a cylindrical nanopore due to asymmetric concentration polarization.

We present experimental measurements of electromigration current through a single cylindrical nanopore. A single cylindrical nanopore with 175 nm diameter was fabricated in silicon in series with two micropores with 2 and 100 microm diameters. Thick electrical double layers (EDLs) (kappa a approximately 1) exhibit current rectification due to asymmetric concentration polarization while thinner EDLs show nearly symmetric conductance. After the electric field is turned off, electrical current is measured and observed due to redistribution of ions in the concentration polarization layer.

Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET.

A close-packed monolayer of zinc 5,10,15,20-tetrakis(3-carboxyphenyl)porphyrin has been prepared and deposited on the thin native oxide covering the surface of an SOI-MOSFET (silicon-on-insulator metal-oxide-semiconductor field effect transistor) using Langmuir-Blodgett techniques. When the device is exposed to amine vapors in a nitrogen atmosphere, the amine coordinates to the zinc atom. The resulting change in electron distribution within the porphyrin leads to a large change in the drain current of the transistor, biased via a back gate. This change is sensitive to both the amount of amine present and the base strength of the amine. Only very small changes in drain current were observed with a monolayer of free base porphyrin or palmitic acid. After exposure to high pyridine concentrations, the device response saturates, but partially recovers after overnight exposure to flowing nitrogen gas. Interestingly, the device response is instantaneously reset by exposure to visible light, suggesting that photode-ligation occurs. An electrical model for the hybrid device that describes its response to ligand binding in terms of a change in the work function of the porphyrin monolayer has been developed. A transistor response to a few hundred attomoles of bound pyridine can be readily detected. This extreme sensitivity, coupled with the ability to reset the device using light, suggests that such systems might be useful as sensors.

A Low-power CMOS BFSK Transceiver for Health Monitoring Systems.

A CMOS low-power transceiver for implantable and external health monitoring devices operating in the MICS band is presented. The LNA core has an integrated mixer in a folded configuration to reuse the bias current, allowing high linearity with a low power supply levels. The baseband strip consists of a pseudo differential MOS-C band-pass filter achieving demodulation of 150kHz-offset BFSK signals. An all digital frequency-locked loop is used for LO generation in the RX mode and for driving a class AB power amplifier in the TX mode. The MICS transceiver is designed and fabricated in a 0.18µm 1-poly, 6-metal CMOS process. The sensitivities of -70dBm and -98dBm were achieved with NF of 40dB and 11dB at the data rate of 100kb/s while consuming only 600µW and 1.5mW at 1.2V and 1.8V, respectively. The BERs are less than 10-3 at the input powers of -70dBm at 1.2V and -98dBm at 1.8V at the data rate of 100kb/s. Finally, the output power of the transmitter is 0dBm for a power consumption of 1.8mW.