Real-time dynamic wavelength tuning and intensity modulation of metal-clad nanolasers.

To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstrate in-situ dynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser's emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of ∼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge.

Lasing action in low-resistance nanolasers based on tunnel junctions.

We experimentally demonstrate the lasing action of a new nanolaser design with a tunnel junction. By using a heavily doped tunnel junction for hole injection, we can replace the p-type contact material of a conventional nanolaser diode with a low-resistance n-type contact layer. This leads to a significant reduction of the device resistance and lowers the threshold voltage from 5 V to around 0.95 V at 77 K. The lasing behavior is verified by the light output versus the injection current (L-I) characterization and second-order coherence function measurements. Because of less Joule heating during current injection, the nanolaser can be operated at temperatures as high as 180 K under CW pumping. The incorporation of heavily doped tunnel junctions may pave the way for other nanoscale cavity design for improved heat management.

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities.

We present experimental results on the observation of a bulk second-order nonlinear susceptibility, derived from both free-space and integrated measurements, in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely χ(2) yyy = 0.14 ± 0.08 pm/V and χ(2) xxy = 0.30 ± 0.18 pm/V. Additionally, we show how the second-harmonic signal may be tuned through the application of bias voltages across silicon nitride. The material properties measured here are anticipated to allow for the realization of new nanophotonic devices in CMOS-compatible silicon nitride waveguides, adding to their viability for telecommunication, data communication, and optical signal processing applications.

Effect of dielectric claddings on the electro-optic behavior of silicon waveguides.

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide and, by measuring their electro-optic behavior, we characterize the capacitively induced free-carrier effect. By comparing our results with simulations, we confirm that the observed voltage dependences of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguides and show how strongly these effects depend on the cladding material that comes into contact with the waveguide. Waveguide loss is additionally found to have a high sensitivity to the applied voltage, suggesting that these effects may find use in applications that require low- or high-loss propagation. These phenomena, which are present in all semiconductor waveguides, may be incorporated into more complex waveguide designs in the future to create high-efficiency electro-optic modulators and wavemixers.

Extremely compact hybrid III-V/SOI lasers: design and fabrication approaches.

In this manuscript we discuss state of the art hybrid integration techniques and III-V/Si active components with an emphasis on hybrid distributed feedback (DFB) lasers for telecom applications. We review our work on ultra-compact III-V/Si DFB lasers and further describe design considerations and challenges associated with electrically pumped hybrid lasers. We conclude with a perspective on DFB lasers with extremely small footprint, a direction for future research with potential applications to densely-packed optical interconnects.

Silicon nanoridge array waveguides for nonlinear and sensing applications.

We fabricate and characterize waveguides composed of closely spaced and longitudinally oriented silicon ridges etched into silicon-on-insulator wafers. Through both guided mode and bulk measurements, we demonstrate that the patterning of silicon waveguides on such a deeply subwavelength scale is desirable for nonlinear and sensing applications alike. The proposed waveguide geometry simultaneously exhibits comparable propagation losses to similar schemes proposed in literature, an enhanced effective third-order nonlinear susceptibility, and high sensitivity to perturbations in its environment.

Multichannel Bragg gratings in silicon waveguides with asymmetric sidewall modulation.

We demonstrate a new type of on-chip Bragg grating designed to possess multiple stopbands at predetermined wavelengths. By employing sidewall modulation to control the full width half-maximum and extinction ratio, and through the incorporation of multiple spatial frequencies into the gratings' periodicities, we show that Bragg reflection can be achieved at particular wavelengths of interest without compromising spectrally distinct characteristics. Multiple device geometries are theoretically studied using the finite-difference time-domain method, and the results these analyses yield are shown to be in good agreement with experimental data. We additionally demonstrate how such devices may be employed to fabricate so-called dual-mode Bragg gratings, which are capable of reflecting both TE- and TM-like modes at a single wavelength of operation.

Modal amplification in active waveguides with hyperbolic dispersion at telecommunication frequencies.

We present a method for studying amplification of electromagnetic modes in active, circularly symmetric waveguides with hyperbolic dispersion. Using this method, we obtain a closed-form expression for the modal threshold condition. We find that modal amplification is possible in a region of the radius-wavelength phase-space with small enough radius so that propagation of the mode is permitted while modal energy and phase counter-propagate. At telecommunication frequencies, such a situation is achievable only when the absolute value of the real metal permittivity exceeds that of the active dielectric. We validate our theoretical conclusions with numerical simulations that explain the threshold condition in terms of an energy balance between the longitudinal and radial components of the electric field.

Embedded coupled microrings with high-finesse and close-spaced resonances for optical signal processing.

Single microring resonators have been used in applications such as wavelength multicasting and microwave photonics, but the dependence of the free spectral range with ring radius imposes a trade-off between the required GHz optical channel spacing, footprint and power consumption. We demonstrate four-channel all-optical wavelength multicasting using only 1 mW of control power, with converted channel spacing of 40-60 GHz. Our device is based on a compact embedded microring design fabricated on a scalable SOI platform. The coexistence of close resonance spacing and high finesse (205) in a compact footprint is possible due to enhanced quality factors (30,000) resulting from the embedded configuration and the coupling-strength dependence of resonance spacing, instead of ring size. In addition, we discuss the possibility of achieving continuously mode splitting from a single-notch resonance up to 40 GHz.

Carrier saturation in multiple quantum well metallo-dielectric semiconductor nanolaser: is bulk material a better choice for gain media?

Although multi quantum well (MQW) structure is frequently suggested as the appropriate medium for providing optical gain in nanolasers with low threshold current, we demonstrate that in general bulk gain medium can be a better choice. We show that the high threshold gain required for nanolasers demands high threshold carrier concentrations and therefore a highly degenerate condition in which the barriers between the quantum wells are heavily pumped. As a result, there occurs spontaneous emission from the barrier in very dissipative low Q modes or undesired confined higher Q modes with resonance wavelengths close to the barrier bandgap. This results in a competition between wells and barriers that suppresses lasing. A complete model involving the optical properties of the resonant cavity combined with the carrier injection in the multilayer structure is presented to support our argument. With this theoretical model we show that while lasing is achieved in the nanolaser with bulk gain media, the nanolaser with MQW gain structure exhibits well emission saturation due to the onset of barrier emission.

Purcell effect in sub-wavelength semiconductor lasers.

We present a formal treatment of the modification of spontaneous emission rate by a cavity (Purcell effect) in sub-wavelength semiconductor lasers. To explicitly express the assumptions upon which our formalism builds, we summarize the results of non-relativistic quantum electrodynamics (QED) and the emitter-field-reservoir model in the quantum theory of damping. Within this model, the emitter-field interaction is modified to the extent that the field mode is modified by its environment. We show that the Purcell factor expressions frequently encountered in the literature are recovered only in the hypothetical condition when the gain medium is replaced by a transparent medium. Further, we argue that to accurately evaluate the Purcell effect, both the passive cavity boundary and the collective effect of all emitters must be included as part of the mode environment.

a-SiOx active photonic crystal resonator membrane fabricated by focused Ga+ ion beam.

We have fabricated thin erbium-doped amorphous silicon sub-oxide (a-SiOx) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of ~2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling.

Detection of optical activity with diode-integrated hyperbolic metasurfaces.

We present an analytical technique for designing integrated polarized light-emitting diodes (LEDs) and polarization-sensitive photodiodes (PD) based on hyperbolic metasurfaces (HMS) for the detection of optical activity. Leveraging effective medium theory and the scattering matrix method, we first derive the conditions for optimizing the transmission efficiency of an LED-integrated HMS and the absorption efficiency of a PD-integrated HMS. We then propose using a differential detection technique with orthogonally oriented PD-integrated HMS to measure optical activity in an extremely compact volume. Finally, we perform an estimation of system performance and find that, relative to state-of-the-art polarimeters, a reduction of complexity can be achieved without sacrificing resolution. The results hold merit for reducing the size and cost of polarimeters and associated polarimetric sensing systems, which play vital roles in the pharmaceutical and biomedical sciences.

Simple Nanoimprinted Polymer Nanostructures for Uncooled Thermal Detection by Direct Surface Plasmon Resonance Imaging.

We experimentally demonstrate the uncooled detection of long wavelength infrared (IR) radiation by thermal surface plasmon sensing using an all optical readout format. Thermal infrared radiation absorbed by an IR-sensitive material with high thermo-optic coefficient coated on a metal grating creates a refractive index change detectable by the shift of the supported surface plasmon resonance (SPR) measured optically in the visible spectrum. The interface localization of SPR modes and optical readout allow for submicrometer thin film transducers and eliminate complex readout integrated circuits, respectively, reducing form factor, leveraging robust visible detectors, and enabling low-cost imaging cameras. We experimentally present the radiative heat induced thermo-optic action detectable by SPR shift through imaging of a thermal source onto a bulk metal grating substrate with IR-absorptive silicon nitride coating. Toward focal plane array integration, a route to facile fabrication of pixelated metal grating structures by nanoimprint lithography is developed, where a stable polymer, parylene-C, serves as an IR-absorptive layer with a high thermo-optic coefficient. Experimental detection of IR radiation from real thermal sources imaged at infinity is demonstrated by our nanoimprinted polymer-SPR pixels with an estimated noise equivalent temperature difference of 21.9 K.

Nonreciprocal lasing in topological cavities of arbitrary geometries.

Resonant cavities are essential building blocks governing many wave-based phenomena, but their geometry and reciprocity fundamentally limit the integration of optical devices. We report, at telecommunication wavelengths, geometry-independent and integrated nonreciprocal topological cavities that couple stimulated emission from one-way photonic edge states to a selected waveguide output with an isolation ratio in excess of 10 decibels. Nonreciprocity originates from unidirectional edge states at the boundary between photonic structures with distinct topological invariants. Our experimental demonstration of lasing from topological cavities provides the opportunity to develop complex topological circuitry of arbitrary geometries for the integrated and robust generation and transport of photons in classical and quantum regimes.

Electronic Metamaterials with Tunable Second-order Optical Nonlinearities.

The ability to engineer metamaterials with tunable nonlinear optical properties is crucial for nonlinear optics. Traditionally, metals have been employed to enhance nonlinear optical interactions through field localization. Here, inspired by the electronic properties of materials, we introduce and demonstrate experimentally an asymmetric metal-semiconductor-metal (MSM) metamaterial that exhibits a large and electronically tunable effective second-order optical susceptibility (χ(2)). The induced χ(2) originates from the interaction between the third-order optical susceptibility of the semiconductor (χ(3)) with the engineered internal electric field resulting from the two metals possessing dissimilar work function at its interfaces. We demonstrate a five times larger second-harmonic intensity from the MSM metamaterial, compared to contributions from its constituents with electrically tunable nonlinear coefficient ranging from 2.8 to 15.6 pm/V. Spatial patterning of one of the metals on the semiconductor demonstrates tunable nonlinear diffraction, paving the way for all-optical spatial signal processing with space-invariant and -variant nonlinear impulse response.