Why do dipole moments of HCl-water clusters fail to determine acid dissociation?

This paper quantitatively examines why dipole moments of HCl(H2O)n=1-8 cannot serve as the dissociation criterion for acid molecules using the Hirshfeld-I approach. Also, we propose the possible experimental parameter 〈P(HCl)〉, whose statistical average enables the assessment of acid dissociation in mixed clusters. Furthermore, our calculations reveal that a minimum of four water molecules are necessary to dissociate an HCl molecule.

Enhanced magnetic anisotropy of iridium dimers on antisite defects of two-dimensional transition-metal dichalcogenides.

The combination of transition-metal (TM) elements with two-dimensional (2D) transition-metal dichalcogenides (TMDs) provides an effective route to realizing a 2D controllable magnetic order, leading to significant applications in multifunctional nanospintronics. However, in most TM atoms@TMDs nanostructures, it is challenging for the magnetic anisotropy energy (MAE) to exceed 30 meV when affected by the crystal field. Hence, the stronger magnetic anisotropy of TMDs has yet to be developed. Here, utilizing first-principle calculations based on density functional theory (DFT), a feasible method to enhance the MAEs of TMDs via configurating iridium dimers (Ir2) on 2D traditional and Janus TMDs with antisite defects is reported. Calculations revealed that 28 of the 54 configurations considered possessed structure-dependent MAEs of >60 meV per Ir2 in the out-of-plane direction, suggesting the potential for applications at room temperature. We also showed the ability to tune the MAE further massively by applying a biaxial strain as well as the surface asymmetric polarization reversal of Janus-type substrates. This approach led to changes to >80 meV per Ir2. This work provides a novel strategy to achieve tunable large magnetic anisotropy in 2D TMDs. It also extends the functionality of antisite-defective TMDs, thereby providing theoretical support for the development of magnetic nanodevices.

Flexible MA2Z4 (M = Mo, W; A = Si, Ge and Z = N, P, As) monolayers with outstanding mechanical, dynamical, electronic, and piezoelectric properties and anomalous dynamic polarization.

We systematically investigate the mechanical, dynamical, and piezoelectric properties of MA2Z4 monolayers (M = Mo, W; A = Si, Ge and Z = N, P, As) based on first-principles calculations. The structural properties, cohesive energy and formation energy analyses show that all of the considered MA2Z4 monolayers are dynamically stable. Ab initio molecular dynamics simulations further indicate that the MA2Z4 monolayers can sustain stability at high temperatures. The MA2Z4 monolayers exhibit isotropic mechanical properties with the bearable largest strains exceeding 25% and 30% in the armchair and zigzag directions. All MA2Z4 monolayers exhibit semiconducting properties, and the band gaps change in a wide range. The piezoelectric constants e11 and d11 increase from 3.21 × 10-10 to 8.17 × 10-10 C m-1 and 0.73 to 6.05 pm V-1, respectively. We reveal that the piezoelectric coefficients are closely related to the ratio of the polarizabilities of the isolated anions and cations. Infrared spectroscopy indicates that the piezoelectricity is the overlap of the intrinsic dipole moments existing in the inner MZ2 monolayer and outer A2Z2 bilayer. Besides, the Born effective charges quantificationally show the contribution of component atoms to polarization. The anomalous dynamic polarization around M atoms is found, which is generated from the anti-bonding of the last occupied orbital. Our results indicate that the MA2Z4 monolayers have great potential in piezotronics and piezo-phototronics fields.

A molecular device providing a remarkable spin filtering effect due to the central molecular stretch caused by lateral zigzag graphene nanoribbon electrodes.

Through the density functional theory, we studied molecular devices composed of single tetrathiafulvalene (TTF) molecules connected with zigzag graphene nanoribbon electrodes by four different junctions. Interestingly, some devices have exhibited half-metallic behavior and can bring out a perfect spin filtering effect and remarkable negative differential resistance behavior. The current-voltage characteristics show that these four devices possess different spin current values. We found that all the TTF molecules were stretched due to interactions with the electrodes in the four devices. This leads to the Fermi levels of the three devices being down-shifted to the valence band; therefore, these devices exhibit half-metallic properties. The underlying mechanisms of the different spin current values are attributed to the different electron transmission pathways (via chemical bonds or through hopping between atoms). These results suggest that the device properties and conductance are controlled by different junctions. Our work predicts an effective way for designing high-performance spin-injected molecular devices.

Directed growth of graphene nanomesh in purified argon via chemical vapor deposition.

Graphene nanomeshes (GNMs), new graphene nanostructures with tunable bandgaps, are potential building blocks for future electronic or photonic devices, and energy storage and conversion materials. In previous works, GNMs have been successfully prepared on Cu foils by the H2 etching effect. In this paper, we investigated the effect of Ar on the preparation of GNMs, and how the mean density and shape of them vary with growth time. In addition, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM) revealed the typical hexagonal structure of GNM. Atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS) indicated that large copper oxide nanoparticles produced by oxidization in purified Ar can play an essential catalytic role in preparing GNMs. Then, we exhibited the key reaction details for each growth process and proposed a growth mechanism of GNMs in purified Ar.

Transition of recollision trajectories from linear to elliptical polarization.

Using a classical ensemble method, we revisit the topic of recollision and nonsequential double ionization with elliptically polarized laser fields. We focus on how the recollision mechanism transitions from short trajectories with linear polarization to long trajectories with elliptical polarization. We propose how this transition can be observed by meansuring the carrier-envelop-phase dependence of the correlated electron momentum spectra using currently available few-cycle laser pulses.

Electric field control of the magnetic anisotropy energy of double-vacancy graphene decorated by iridium atoms.

To solve the fundamental dilemma in data storage applications, it is crucial to manipulate the magnetic anisotropy energy (MAE). Herein, using first-principles calculations, we predict that the system of double-vacancy graphene decorated by iridium atoms possesses high stability, giant MAE, perpendicular-anisotropy and long-range ferromagnetic coupling. More importantly, the amplitude of MAE can be manipulated by electric fields. This is due to the change in the occupation number of Ir-5d orbitals. The present hybrid system could be a high-performance nanoscale information storage device with ultralow energy consumption.

Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates.

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states.

Clinical and epidemiological characteristics of a fatal case of avian influenza A H10N8 virus infection: a descriptive study.

BACKGROUND: Human infections with different avian influenza viruses--eg, H5N1, H9N2, and H7N9--have raised concerns about pandemic potential worldwide. We report the first human infection with a novel reassortant avian influenza A H10N8 virus. METHODS: We obtained and analysed clinical, epidemiological, and virological data from a patient from Nanchang City, China. Tracheal aspirate specimens were tested for influenza virus and other possible pathogens by RT-PCR, viral culture, and sequence analyses. A maximum likelihood phylogenetic tree was constructed. FINDINGS: A woman aged 73 years presented with fever and was admitted to hospital on Nov 30, 2013. She developed multiple organ failure and died 9 days after illness onset. A novel reassortant avian influenza A H10N8 virus was isolated from the tracheal aspirate specimen obtained from the patient 7 days after onset of illness. Sequence analyses revealed that all the genes of the virus were of avian origin, with six internal genes from avian influenza A H9N2 viruses. The aminoacid motif GlnSerGly at residues 226-228 of the haemagglutinin protein indicated avian-like receptor binding preference. A mixture of glutamic acid and lysine at residue 627 in PB2 protein--which is associated with mammalian adaptation--was detected in the original tracheal aspirate samples. The virus was sensitive to neuraminidase inhibitors. Sputum and blood cultures and deep sequencing analysis indicated no co-infection with bacteria or fungi. Epidemiological investigation established that the patient had visited a live poultry market 4 days before illness onset. INTERPRETATION: The novel reassortant H10N8 virus obtained is distinct from previously reported H10N8 viruses. The virus caused human infection and could have been associated with the death of a patient. FUNDING: Emergency Research Project on human infection with avian influenza H7N9 virus, the National Basic Research Program of China, and the National Mega-projects for Infectious Diseases.

Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor.

Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 µ B to 5.1 µ B for the ground-state GN at an electric field strength of 3 - 10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.

Local electrical conduction in polycrystalline La-doped BiFeO3 thin films.

Local electrical conduction behaviors of polycrystalline La-doped BiFeO3 thin films have been investigated by combining conductive atomic force microscopy and piezoelectric force microscopy. Nanoscale current measurements were performed as a function of bias voltage for different crystal grains. Completely distinct conducting processes and resistive switching effects were observed in the grain boundary and grain interior. We have revealed that local electric conduction in a grain is dominated by both the grain boundary and ferroelectric domain, and is closely related to the applied electric field and the as-grown state of the grain. At lower voltages the electrical conduction is dominated by the grain boundary and is associated with the redistribution of oxygen vacancies in the grain boundary under external electric fields. At higher voltages both the grain boundary and ferroelectric domain are responsible for the electrical conduction of grains, and the electrical conduction gradually extends from the grain boundary into the grain interior due to the extension of the ferroelectric domain towards the grain interior. We have also demonstrated that the conduction dominated by the grain boundary exhibits a much small switching voltage, while the conduction of the ferroelectric domain causes a much high switching voltage in the grain interior.

First-principles prediction of magnetic superatoms in 4d-transition-metal-doped magnesium clusters.

We theoretically predict magnetic superatoms in the 4d-transition-metal-doped Mg8 clusters using a spin-polarized density functional theory method. We demonstrate that TcMg8 is highly energetically stable in both structure and magnetic states, and identify it as a magnetic superatom with a magnetic moment as large as 5 µB. The magnetic TcMg8 with 23 valence electrons has a configuration of 1S(2)1P(6)1D(10) closed shell and 2S(1)2D(4) open shell, complying with Hund's rule similar to the single atom. We elucidate the formation mechanism of the magnetic TcMg8 superatom based on the detailed analysis of molecular orbitals, and attribute it to the large exchange interaction and moderate crystal field effect. Finally, we predict that the magnetic TcMg8 may exhibit semiconductor-like property with spin polarization characteristics.

Correlation and Prognostic Assessment of Low T3 Syndrome and Norepinephrine Dosage for Patients with Sepsis: A Retrospective Single-Center (Cohort) Study.

Purpose: To investigate the correlation and prognostic significance of low triiodothyronine (T3) syndrome and norepinephrine dosage in patients with sepsis and septic shock. Methods: This single-center, retrospective, cohort study enrolled 169 patients with sepsis and septic shock that were admitted to the intensive care unit of First Hospital of Nanchang, Nanchang, China from June 2017 to July 2019. All included patients were followed up for 28 days or died, whichever was earlier. Patients with free T3 (FT3) of <3.1 pmol/L were considered with low T3 syndrome. The correlation and prognostic significance of the FT3 and maximum dosage of norepinephrine (MDN) within 72 h, as well as other clinical indicators, were analyzed by using correlation analysis, principal component analysis, receiver operating characteristic curve, Youden index, and logistic regression. Results: A total of 138 patients were allocated to the low T3 group. FT3 inversely correlated with the Sequential Organ Failure Assessment (SOFA) score within 24 h, fluid resuscitation volume within 24 h, and lactic acid levels, and positively correlated with the mean arterial pressure. The critical values of age, SOFA, and MDN for predicting the 28-day mortality were 79.5 years, 8.5 points, and 0.61 µg/kg/min, respectively. The mortality of the low T3 and normal T3 groups was similar. Considering the MDN of 0.61 µg/kg/min as the cutoff value, the mortality between the two groups was significantly different. Conclusion: Among patients with sepsis and septic shock, FT3 was inversely correlated with the disease severity. An MDN ≥ 0.61 µg/kg/min within 72 h may be an important prognostic indicator.

Visualizing topological insulating Bi2Te3 quintuple layers on SiO2-capped Si substrates and its contrast optimization.

Thin Bi2Te3 flakes, with as few as 3 quintuple layers, are optically visualized on the SiO2-capped Si substrates. Their optical contrasts vary with the illumination wavelength, flake thickness and capping layers. The maximum contrast appears at the optimized light with the 570 nm wavelength. The contrast turns reversed when the flake is reduced to less than 20 quintuple layers. A calculation based on the Fresnel law describes the above observation with the constructions of the layer number-wave length-contrast three-dimensional (3D) diagram and the cap thickness-wavelength-contrast 3D diagram, applicative in the current studies of topological insulating flakes.

Plasmonic evolution of atomically size-selected Au clusters by electron energy loss spectrum.

The plasmonic response of gold clusters with atom number (N) = 100-70 000 was investigated using scanning transmission electron microscopy-electron energy loss spectroscopy. For decreasing N, the bulk plasmon remains unchanged above N = 887 but then disappears, while the surface plasmon firstly redshifts from 2.4 to 2.3 eV above N = 887 before blueshifting towards 2.6 eV down to N = 300, and finally splitting into three fine features. The surface plasmon's excitation ratio is found to follow N 0.669, which is essentially R 2. An atomically precise evolution picture of plasmon physics is thus demonstrated according to three regimes: classical plasmon (N = 887-70 000), quantum confinement corrected plasmon (N = 300-887) and molecule related plasmon (N < 300).

Scaling dopant states in a semiconducting nanostructure by chemically resolved electron energy-loss spectroscopy: a case study on Co-doped ZnO.

Dilute dopant introduces foreign states to the electronic structures of host semiconductors and imparts intriguing properties to the materials. Identifying and positioning the dopant states are of crucial importance for seeking the underlying mechanism in the doped systems. However, such determination has still been challenging, particularly for individual nanostructured materials, due to the lack of the spectroscopic probe that possesses both nanometer spatial resolution and chemical resolution. Here, we shall demonstrate the successful scaling of dopant states of individual semiconducting nanostructures by chemically resolved electron energy-loss spectroscopy (EELS), taking the individual Co-doped ZnO nanorods as an example. Guided by the Co dopant spatial distribution mapped by the core-loss EELS technique, chemical resolution is achieved in the accumulated valence electron energy-loss spectra. Three Co dopant states are successfully identified and positioned in the host ZnO bands. Furthermore, the electron extension degrees of the Co dopant states are assessed on the basis of the multiple-atom effect. The above experimental inputs optimize the density functional theoretical calculations, which generates the corrected full electronic structures of (Zn,Co)O dilute magnetic semiconductors. These results give a carrier-mediated interpretation for the room-temperature ferromagnetism of Co-doped ZnO nanostructures based on a recent theory.

Visualizing plasmon coupling in closely spaced chains of Ag nanoparticles by electron energy-loss spectroscopy.

Anisotropic plasmon coupling in closely spaced chains of Ag nanoparticles is visualized using electron energy-loss spectroscopy in a scanning transmission electron microscope. For dimers as the simplest chain, mapping the plasmon excitations with nanometer spatial resolution and an energy resolution of 0.27 eV intuitively identifies two coupling plasmons. The in-phase mode redshifts from the ultraviolet region as the interparticle spacing is reduced, reaching the visible range at 2.7 eV. Calculations based on the discrete-dipole approximation confirm its optical activeness, where the longitudinal direction is constructed as the path for light transportation. Two coupling paths are then observed in an inflexed four-particle chain.

Structures and magnetic properties of Si(n)Mn (n = 1-15) clusters.

The structure, electronic, magnetic properties of Si(n)Mn clusters up to n=15 are systematically investigated using the density functional theory within the generalized gradient approximation. In the most stable configurations of Si(n)Mn clusters, the equilibrium site of Mn atom gradually moves from convex, to a surface, and to a concave site as the number of Si atoms varying from 1 to 15. Starting from n=11, the Mn atom completely falls into the center of the Si outer frame, forming Mn-encapsulated Si cages. Maximum peaks of second-order energy difference are found at n=6, 8, 10, and 12, indicating that these clusters possess relatively higher stability. The electronic structures and magnetic properties of Si(n)Mn clusters are discussed. The magnetic moment of Si(n)Mn clusters mainly is located on Mn atom. The 3d electrons in Mn atom play a dominant role in the determination of the magnetism of Mn atom in Si(n)Mn clusters. Furthermore, the moment of Mn atom in Si(n)Mn clusters exhibits oscillatory behavior and are quenched at n>7 except for n=12, mainly due to the charge transfer, strong hybridization between Mn 4s, 3d, 4p and Si 3s, 3p states.

Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography.

We prepare an array of amorphous silicon nanopillars by using a modified nanosphere lithography method. The fabrication process includes three steps: (1) 70 nm thick a-Si film was deposited on a crystalline silicon substrate; (2) the substrate was coated with a monolayer of polystyrene (PS) spheres to form an ordered structure on the a-Si thin film surface; (3) the sample was etched by reactive ion etching to produce the amorphous silicon pillar array. The results of field emission measurements show a low turn-on electrical field of about 4.5 V microm(-1) at a current density of 10 microA cm(-2). A relatively high current density exceeding 0.2 mA cm(-2) at 9 V microm(-1) was also obtained. The field enhancement factor is calculated to be about 1240 according to the Fowler-Nordheim (FN) relationship. The good field emission characteristics are attributed to the geometrical morphology, crystal structure and the high density of the field emitter of the silicon nanopillar.

Highly Promoted Carrier Mobility and Intrinsic Stability by Rolling Up Monolayer Black Phosphorus into Nanoscrolls.

Rolling up two-dimensional (2D) materials into nanoscrolls could not only retain the excellent properties of their 2D hosts but also display intriguing physical and chemical properties that arise from their 1D tubular structures. Here, we report a new class of black phosphorus nanoscrolls (bPNSs), which are stable at room-temperature and energetically more favorable than 2D bP. Most strikingly, these bPNSs hold tunable direct band gaps and extremely high mobilities (e.g., the mobility of the double-layer bPNS is about 20-fold higher than that of 2D bP monolayer). Their unique self-encapsulation structure and layer-dependent conduction band minimum can largely prevent the entrance of O2 and the production of O2- and thereby suppress the possible environmental degradation as well. The enhanced intrinsic stability and promoted electronic properties render bPNSs great promise in many advanced electronics or optoelectronics applications.