Substitutional doping of MoTe2/ZrS2 heterostructures for sustainable energy related applications.

Stacking and/or substitutional doping are effective strategies to tune two-dimensional materials with desired properties, greatly extending the applications of the pristine materials. Here, by employing first-principles calculations, we propose that a pristine MoTe2/ZrS2 heterostructure is a distinguished lithium-ion battery anode material with a low Li diffusion barrier (∼0.26 eV), and it has a high maximum Li storage capacity (476.36 mA h g-1) and a relatively low open-circuit voltage (0.16 V) at Li4/MoTe2/Li/ZrS2/Li4. The other heterostructures with different types can be achieved by substitutional doping and their potential applications in sustainable energy related areas are further unraveled. For instance, a type-II TeMoSe/ZrS2 heterostructure could be a potential direct Z-scheme photocatalyst for water splitting with a high solar-to-hydrogen conversion efficiency of 17.62%. The TeMoSe/SZrO heterostructure is predicted to be a potential candidate for application in highly efficient solar cells. Its maximum power conversion efficiency can be as high as 19.21%, which is quite promising for commercial applications. The present results will shed light on the sustainable energy applications of pristine or doped MoTe2/ZrS2 heterostructures in the future.

Enhanced carrier mobility and tunable electronic properties in α-tellurene monolayer via an α-tellurene and h-BN heterostructure.

Using first-principles calculations within density functional theory, we explore the electronic properties of the α-tellurene/h-BN (Te/BN) heterostructure. We find that the type-I van der Waals (vdW) Te/BN bilayer exhibits an indirect semiconductor property with a bandgap of 0.59 eV, in which both the valence band maximum and conduction band minimum originate from the tellurene monolayer. The very weak interaction between α-tellurene and h-BN monolayers is demonstrated by the small charge transfer between the interlayer. More strikingly, we find that the carrier mobilities in the Te/BN bilayer can reach up to 104 cm2 s-1 V-1, one order of magnitude larger than those in tellurene. The underlying physics is that the Te/BN bilayer dramatically increases the in-plane stiffness as well as reducing the deformation potential compared with the tellurene monolayer. Additionally, we also show that the electronic properties of the Te/BN bilayer can easily be tuned by introducing defects or dopants in the BN monolayer. For instance, the B vacancy makes the Te/BN bilayer undergo the transition from semiconductor to half-metal. Our findings will broaden the potential application of tellurene and provide theoretical guidance for the relative experimental studies on 2D heterobilayers.

Tunable bulk polaritons of graphene-based hyperbolic metamaterials.

The tunable hyperbolic metamaterial (HMM) based on the graphene-dielectric layered structure at THz frequency is presented, and the surface and bulk polaritons of the graphene-based HMM are theoretically studied. It is found that the dispersions of the polaritons can be tuned by varying the Fermi energy of graphene sheets, the graphene-dielectric layers and the layer number of graphene sheets. In addition, the highly confined bulk polariton mode can be excited and is manifested in an attenuated total reflection configuration as a sharp drop in the reflectance. Such properties can be used in tunable optical reflection modulation with the assistance of bulk polaritons.

Enhanced photocatalytic activity by regulating charge transferring: Unveiling the decisive role of cerium oxide crystal-facet engineering over heterojunction.

Heterojunctions have been verified to be effective for separation of photogenerated electrons and holes, therefore improving the photocatalytic efficiency. Meanwhile, cerium oxide (CeO2) is an ideal semiconductor for studying the influence of different exposed crystal facets on regulation of electron transport pathways over heterojunctions. Herein, various kinds of crystal facet-dependent CeO2/g-C3N4 (graphitic carbon nitride) heterojunctions have been successfully engineered as representative model catalysts, and their critical role in regulating charge transfer pathways has been confirmed by systemic characterizations. It was found that facet-dependent heterojunctions followed different charge transport pathways, leading to different H2 evolution activities. In detail, heterojunctions with (100) and (110) exposed surfaces followed the Z-scheme transport pathways, while heterojunction with (111) exposed surface followed the type-II pathway. The H2 evolution rates via these three kinds of heterojunctions were determined to be 3.084, 1.925, and 1.128 mmol·g-1·h-1, respectively, which were 13.3, 7.9, 4.2 times that of bare g-C3N4. It's revealed that the different exposed crystal facets of CeO2 with different Fermi levels determine the transport pathways of photogenerated carriers. This work shows an example of controlling photocatalytic activity by facet-dependent heterojunctions and reveals the importance role of crystal-facet engineering toward heterojunction construction, which is expected to provide an important guidance for the design of new photocatalytic systems.

Plasmon excitations in sodium atomic planes: a time-dependent density functional theory study.

The collective electronic excitation in planar sodium clusters is studied by time-dependent density functional theory calculations. The formation and development of the resonances in photoabsorption spectra are investigated in terms of the shape and size of the two-dimensional (2D) systems. The nature of these resonances is revealed by the frequency-resolved induced charge densities present on a real-space grid. For long double chains, the excitation is similar to that in long single atomic chains, showing longitudinal modes, end and central transverse modes. However, for 2D planes consisting of (n × n) atoms with n being up to 16, new 2D characteristic modes emerge regardless of the symmetries considered. For in-plane excitations, besides the equivalent end mode, mixed modes with contrary polarity occur. The relation between the frequency of the primary modes and the system size is similar to the case of a 2D electron gas but with a correction due to the realistic atomic structure. For excitations perpendicular to the plane there are corner, side center, bulk center, and circuit modes. Our calculation reveals the importance of dimensionality for plasmon excitation and how it evolves from 1D to 2D.

Highly tunable spin-dependent electron transport through carbon atomic chains connecting two zigzag graphene nanoribbons.

Motivated by recent experiments of successfully carving out stable carbon atomic chains from graphene, we investigate a device structure of a carbon chain connecting two zigzag graphene nanoribbons with highly tunable spin-dependent transport properties. Our calculation based on the non-equilibrium Green's function approach combined with the density functional theory shows that the transport behavior is sensitive to the spin configuration of the leads and the bridge position in the gap. A bridge in the middle gives an overall good coupling except for around the Fermi energy where the leads with anti-parallel spins create a small transport gap, while the leads with parallel spins give a finite density of states and induce an even-odd oscillation in conductance in terms of the number of atoms in the carbon chain. On the other hand, a bridge at the edge shows a transport behavior associated with the spin-polarized edge states, presenting sharp pure α-spin and ß-spin peaks beside the Fermi energy in the transmission function. This makes it possible to realize on-chip interconnects or spintronic devices by tuning the spin state of the leads and the bridge position.

Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation.

Recently, GaTe and C2N monolayers have been successfully synthesized and show fascinating electronic and optical properties. Such hybrid of GaTe with C2N may induce new novel physical properties. In this work, we perform ab initio simulations on the structural, electronic, and optical properties of the GaTe/C2N van der Waals (vdW) heterostructure. Our calculations show that the GaTe/C2N vdW heterostructure is an indirect-gap semiconductor with type-II band alignment, facilitating an effective separation of photogenerated carriers. Intriguingly, it also presents enhanced visible-UV light absorption compared to its components and can be tailored to be a good photocatalyst for water splitting at certain pH by applying vertical strains. Further, we explore specifically the adsorption and decomposition of water molecules on the surface of C2N layer in the heterostructure and the subsequent formation of hydrogen, which reveals the mechanism of photocatalytic hydrogen production on the 2D GaTe/C2N heterostructure. Moreover, it is found that in-plane biaxial strains can induce indirect-direct-indirect, semiconductor-metal, and type II to type I or type III transitions. These interesting results make the GaTe/C2N vdW heterostructure a promising candidate for applications in next generation of multifunctional optoelectronic devices.

Stable GaSe-Like Phosphorus Carbide Monolayer with Tunable Electronic and Optical Properties from Ab Initio Calculations.

On the basis of density functional theory (DFT) calculations, we propose a stable two-dimensional (2D) monolayer phosphorus carbide (PC) with a GaSe-like structure, which has intriguing electronic and optical properties. Our calculated results show that this 2D monolayer structure is more stable than the other allotropes predicted by Tománek et al. [Nano Lett., 2016, 16, 3247⁻3252]. More importantly, this structure exhibits superb optical absorption, which can be mainly attributed to its direct band gap of 2.65 eV. The band edge alignments indicate that the 2D PC monolayer structure can be a promising candidate for photocatalytic water splitting. Furthermore, we found that strain is an effective method used to tune the electronic structures varying from direct to indirect band-gap semiconductor or even to metal. In addition, the introduction of one carbon vacancy in such a 2D PC structure can induce a magnetic moment of 1.22 µB. Our findings add a new member to the 2D material family and provide a promising candidate for optoelectronic devices in the future.