RESUMO
Electrolytic manganese residue (EMR) contains a large amount of NH4+-N and Mn2+ and can negatively impact the environment. A stabilization treatment of soluble contaminants in the EMR is necessary for its reuse and safe stacking. This study presents experimental results for the stabilization of NH4+-N and Mn2+ in the EMR using phosphogypsum leachate as a low-cost phosphate source and MgO/CaO (PLMC) process. The results demonstrated that the stabilization efficiency of NH4+-N and Mn2+ was 93.65% and 99.99%, respectively, under the following conditions: a phosphogypsum leachate dose of 1.5 mL g-1, an added MgO dose of 0.036 g g-1, an added CaO dose of 0.1 g g-1 and a reaction time of 2 h. The stabilization effect of the PLMC process was higher and more cost effective than that of using Na3PO4·12H2O and MgO/CaO. The concentration of NH4+-N and Mn2+ in the leaching liquor decreased to 80 mg L-1 and 0.5 mg L-1, respectively, after the stabilization under the optimum conditions. The stabilization characteristics indicated that NH4+-N was stabilized to form NH4MgPO4·6H2O (struvite) and that Mn2+ was stabilized to form Mn5(PO4)2(OH)4, Mn3(PO4)2·3H2O and Mn(OH)2. PO43--P, F-, and heavy metal ions of the phosphogypsum leachate were removed from the leaching liquor and stabilized in the treated EMR.
Assuntos
Compostos de Cálcio/química , Sulfato de Cálcio/química , Óxido de Magnésio/química , Manganês/análise , Óxidos/química , Fósforo/química , Amônia/análise , Amônia/química , Eletrólise , Eletrólitos , Poluentes Ambientais/análise , Poluentes Ambientais/química , Resíduos Industriais/análise , Manganês/química , Solubilidade , Estruvita/análise , Estruvita/químicaRESUMO
In this work, we study the thermal transport at ß-Ga2O3/metal interfaces, which play important roles in heat dissipation and as electrical contacts in ß-Ga2O3 devices. A theoretical Landauer approach was used to model and elucidate the factors that impact the thermal transport at these interfaces. Experimental measurements using time-domain thermoreflectance (TDTR) provided data for the thermal boundary conductance (TBC) between ß-Ga2O3 and a range of metals used to create both Schottky and ohmic electrical contacts. From the modeling and experiments, the relation between the metal cutoff frequency and the corresponding TBC is observed. Moreover, the effect of the metal cutoff frequency on TBC is seen as the most significant factor followed by chemical reactions and defects between the metal and the ß-Ga2O3. Among all ß-Ga2O3/metal interfaces, for Schottky contacts, Ni/ß-Ga2O3 interfaces show the highest TBC, while for ohmic contacts, Cr/ß-Ga2O3 interfaces show the highest TBC. While there is a clear correlation between TBC and the phonon cutoff frequency of metal contacts, it is also important to control the chemical reactions and other defects at interfaces to maximize the TBC in this system.