Resonant Tunneling-Enhanced Photoresponsivity in a Twisted Graphene van der Waals Heterostructure.

Leveraging its ultrahigh carrier mobility, zero-bandgap linear dispersion, and extremely short response time, graphene exhibits remarkable potential in ultrafast broad-band photodetection. Nonetheless, the inherently low responsivity of graphene photodetectors, due to the low photogenerated carrier density, significantly impedes the development of practical devices. In this study, we present an improved photoresponse within a graphene-hexagonal boron nitride-graphene vertical tunnel junction device, where the crystallographic orientation of the two graphene electrodes is aligned. Through meticulous device structure design and the adjustment of bias and gate voltages, we observe a 2 orders of magnitude increase in tunneling photocurrent, which is attributed to the momentum-conserving resonant electron tunneling. The enhanced external photoresponsivity is evident across a wide temperature and spectral range and achieves 0.7 A/W for visible light excitation. This characteristic, coupled with the device's negative differential conductance, suggests a novel avenue for highly efficient photodetection and high-frequency, logic-based optoelectronics using van der Waals heterostructures.

Probing the photocurrent in two-dimensional titanium disulfide.

Generating photocurrent in a condensed matter system involves the excitation, relaxation, and transportation of charge carriers. As such, it is viewed a potent method for probing the dynamics of non-equilibrium carriers and the electronic band structure of solid state materials. In this research, we analyze the photoresponse of the mechanically exfoliated titanium disulfide (TiS2), a transition metal dichalcogenide whose classification as either a semimetal or a semiconductor has been the subject of debate for years. The scanning photocurrent microscopy and the temperature-dependent photoresponse characterization expose the appearance of a photovoltaic current primarily from the metal/TiS2junction in an unbiased sample, while negative photoconductivity due to the bolometric effect is observed in the conductive TiS2channel. The optoelectronic experimental results, combined with electrical transport characterization and angle-resolved photoemission spectroscopy measurements, indicate that the TiS2employed in this study is likely a heavily-doped semiconductor. Our findings unveil the photocurrent generation mechanism of two dimensional TiS2, highlighting its prospective optoelectronic applications in the future.

Tunable Photoresponse in a Two-Dimensional Superconducting Heterostructure.

The photo-induced superconducting phase transition is widely used in probing the physical properties of correlated electronic systems and to realize broadband photodetection with extremely high responsivity. However, such photoresponse is usually insensitive to electrostatic doping due to the high carrier density of the superconductor, restricting its applications in tunable optoelectronic devices. In this work, we demonstrate the gate voltage modulation to the photoresponsivity in a two-dimensional NbSe2-graphene heterojunction. The superconducting critical current of the NbSe2 relies on the gate-dependent hot carrier generation in graphene via the Joule heating effect, leading to the observed shift of both the magnitude and peak position of the photoresponsivity spectra as the gate voltage changes. This heating effect is further confirmed by the temperature and laser-power-dependent characterization of the photoresponse. In addition, we investigate the spatially-resolved photocurrent, finding that the superconductivity is inhomogeneous across the junction area. Our results provide a new platform for designing tunable superconducting photodetector and indicate that the photoresponse could be a powerful tool in studying the local electronic properties and phase transitions in low-dimensional superconducting systems.

Probing the Inelastic Electron Tunneling via the Photocurrent in a Vertical Graphene van der Waals Heterostructure.

Inelastic electron tunneling (IET), accompanied by energy transfer between the tunneling charge carriers and other elementary excitations, is widely used to investigate the collective modes and quasiparticles in solid-state materials. In general, the inelastic contribution to the tunneling current is small compared to the elastic part and is therefore only prominent in the second derivative of the tunneling current with respect to the bias voltage. Here we demonstrate a direct observation of the IET by measuring the photoresponse in a graphene-based vertical tunnel junction device. Characteristic peaks/valleys are observed in the bias-voltage-dependent tunneling photocurrent at low temperatures, which barely shift with the gate voltage applied to graphene and diminish gradually as the temperature increases. By comparing with the second-order differential conductance spectra, we establish that these features are associated with the phonon-assisted IET. A simple model based on the photoexcited hot-carrier tunneling in graphene qualitatively explains the response. Our study points to a promising means of probing the low-energy elementary excitations utilizing the graphene-based van der Waals (vdW) heterostructures.

An Ultralong, Highly Oriented Nickel-Nanowire-Array Electrode Scaffold for High-Performance Compressible Pseudocapacitors.

Ultralong, highly oriented Ni nanowire arrays are used as the electrode scaffold to support metal-oxide- and conductive-polymer-based electrode materials with a high mass loading; the as-obtained asymmetric supercapacitor can be compressed by fourfold and exhibits superior energy and power densities with ultrahigh cycle stability.

Shape-Tailorable Graphene-Based Ultra-High-Rate Supercapacitor for Wearable Electronics.

With the bloom of wearable electronics, it is becoming necessary to develop energy storage units, e.g., supercapacitors that can be arbitrarily tailored at the device level. Although gel electrolytes have been applied in supercapacitors for decades, no report has studied the shape-tailorable capability of a supercapacitor, for instance, where the device still works after being cut. Here we report a tailorable gel-based supercapacitor with symmetric electrodes prepared by combining electrochemically reduced graphene oxide deposited on a nickel nanocone array current collector with a unique packaging method. This supercapacitor with good flexibility and consistency showed excellent rate performance, cycling stability, and mechanical properties. As a demonstration, these tailorable supercapacitors connected in series can be used to drive small gadgets, e.g., a light-emitting diode (LED) and a minimotor propeller. As simple as it is (electrochemical deposition, stencil printing, etc.), this technique can be used in wearable electronics and miniaturized device applications that require arbitrarily shaped energy storage units.