[Relationship between regulation effect of salvia miltiorrhiza on AQP2 in kidney and promoting blood circulation and diuresis].

Partial nature of "promoting blood circulation and dieresis" of Salvia Miltiorrhizain was initially demonstrated by investigating the regulation effect of AQP2 expression in kidney of trauma blood stasis model rats with the Salvia Miltiorrhizain so as to provide guidance for its clinical deployment of administration. Random allocation was taken to averagely divide 30 SD rats into two groups: 10 rats in normal group and 20 rats in blood stasis syndrome group. Trauma blood stasis rat model was established by quantitatively beating. Then the rat model group was divided into model group and salvia group. After 7 days of treatment, the rat kidney AQP2 expression was detected, the content of urine AQP2 was compared and the damaged local muscle and kidney pathological changes were observed by immunohistochemical method and western blot method. Compared with that of the normal group, rats in model group had inflammatory cells infiltration, blood stasis and edema of the injured local muscles and up-regulated AQP2 expression, decreasing urinary output, and kidney tissues blood stasis and edema (P < 0.05). On the other hand, compared with that of the model group, those parameters of rats in salvia group were all decreasing except urine output (P < 0.05). Such result indicated that Salvia Miltiorrhiza can reduce trauma blood stasis rat content of urine AQP2 and down-regulated AQP2 expression in kidney tissue, so as to reduce the reabsorption of water by renal tubular and increase urine output. The promoting blood circulation effect of Salvia Miltiorrhizain can alleviate the degree of the damaged tissue edema and encourage urine drainage. This therapy is closely related to the effect of regulating AQP2 in kidney by salvia, so the purpose of this study by verifying "promoting blood circulation and diuresis" as the mechanism for the regulation effect of the salvia on AQP2 expression.

3D Nanoprinting of Heterogeneous Metal Oxides with High Shape Fidelity.

3D nanoprinting can significantly enhance the performance of sensors, batteries, optoelectronic/microelectronic devices, etc. However, current 3D nanoprinting methods for metal oxides are suffering from three key issues including limited material applicability, serious shape distortion, and the difficulty of heterogeneous integration. This paper discovers a mechanism in which imidazole and acrylic acid synergistically coordinate with metal ions in water. Using the mechanism, this work develops a series of metal ion synergistic coordination water-soluble (MISCWS) resins for 3D nanoprinting of various metal oxides, including MnO2, Cr2O3, Co3O4, and ZnO, as well as heterogeneous structures of MnO2/NiO, Cr2O3/Al2O3, and ZnO/MgO. Besides, the synergistic coordination effect results in a 2.54-fold increase in inorganic mass fraction within the polymer, compared with previous works, which effectively mitigates the shape distortion of metal oxide microstructures. Based on this method, this work also demonstrates a 3D ZnO microsensor with a high sensitivity (1.113 million at 200 ppm NO2), surpassing the conventional 2D ZnO sensors by tenfold. The method yields high-fidelity 3D structures of heterogeneous metal oxides with nanoscale resolution, paving the way for applications such as sensing, micro-optics, energy storage, and microsystems.

Laser Direct Writing of Sol-Gel-Derived Vacancy-Rich Functional Oxide Semiconductors.

Fabricating micro/nanostructures of oxide semiconductors with oxygen vacancies (OVs) is crucial for advancing miniaturized functional devices. However, traditional methods for the synthesis of semiconductor metal oxides (SMOs) with OVs usually involve thermal treatment, such as annealing or sintering, under anaerobic conditions. Herein, a multiphoton-induced femtosecond laser (fs) additive manufacturing method is reported for directly writing micropatterns with high resolution (∼1 µm) and abundant OVs in an atmospheric environment at room temperature (25 °C). The interdigitated functional devices fabricated by these micropatterns exhibit both photosensitivity and gas sensitivity. Additionally, this method can be applied to flexible and rigid substrates. The proposed method realizes the high-precision fabrication of SMOs with OVs, enabling the future heterogeneous integration of oxide semiconductors on various substrates, especially flexible substrates, for various device applications, such as soft and wearable electronics/optoelectronics.

Rapid In-Situ Synthesis and Patterning of Edge-Unsaturated MoS2 by Femtosecond Laser-Induced Photo-Chemical Reaction.

Molybdenum disulfide (MoS2) is a representative transition metal sulfide that is widely used in gas and biological detection, energy storage, and integrated electronic devices due to its unique optoelectrical and chemical characteristics. To advance toward the miniaturization and on-chip integration of functional devices, it is strategically important to develop a high-precision and cost-effective method for the synthesis and integration of MoS2 patterns and functional devices. Traditional methods require multiple steps and time-consuming processes such as material synthesis, transfer, and photolithography to fabricate MoS2 patterns at the desired region on the substrate, significantly increasing the difficulty of manufacturing micro/nanodevices. In this work, we propose a single-step femtosecond laser-induced photochemical method which can realize the fabrication of arbitrary two-dimensional edge-unsaturated MoS2 patterns with high efficiency in microscale. Based on this method, MoS2 can be synthesized at a rate of 150 µm/s, 2 orders of magnitude faster than existing laser-based thermal decomposition methods without sacrificing the resolution and quality. The morphology and roughness of the MoS2 pattern can be controlled by adjusting the laser parameters. Furthermore, the femtosecond laser direct writing (FLDW) method was used to fabricate microscale MoS2-based gas detectors that can detect a variety of toxic gases with high sensitivity up to 0.5 ppm at room temperature. This FLDW method is not only applicable to the fabrication of high-precision MoS2 patterns and integrated functional devices, it also provides an effective route for the development of other micro/nanodevices based on a broad range of transition metal sulfides and other functional materials.

An ultrathin memristor based on a two-dimensional WS2/MoS2 heterojunction.

Memristors are regarded as one of the key devices to break through the traditional Von Neumann computer architecture due to their capability of simulating the function of neural synapses. Among various memristive materials, two-dimensional (2D) materials are promising candidates to build advanced memristors with extremely high integration density and low power consumption. However, memristors based on 2D materials usually suffer from poor endurance and retention due to their vulnerability to material degradation during the formation/fusing processes of conductive filament channels within the switching media of 2D materials. Here, a new memristor architecture based on a WS2/MoS2 2D semiconducting heterojunction (metal/heterojunction/metal, MHM) is proposed, which is completely different from the conventional metal/insulator/metal (MIM) sandwich structure. Through the introduction of a type-II 2D heterojunction, a resistance switching mechanism based on band modulation rather than the conductive filaments can be realized to eliminate the material degradation during the set/reset processes. A prototype MHM memristor based on the WS2/MoS2 heterojunction is successfully developed with a large switching on/off ratio up to 104 and a clearly extended endurance over 120 switching cycles, showing the advantage of the 2D WS2/MoS2 heterojunction over the individual MoS2 or WS2 layers in memristive performance. The proposed method for the MHM-type 2D memristor has the potential to achieve a large-scale integrated memristor matrix with low power consumption and high integration density, which is promising for future artificial intelligence and brain-like computing systems.