Influence of ADHD, especially attention-deficit characteristics, on the course of alcohol-dependent individuals.

BACKGROUND: While several studies have revealed that neurodevelopmental disorders have a high probability of overlapping with substance use disorders, the effects of neurodevelopmental disorders on the courses of substance use disorders have hardly been examined. METHODS: This study targeted 637 alcohol-dependent individuals who received inpatient treatment and whose drinking situations were followed for 12 months after hospital discharge using mailed questionnaires. The comorbidity of psychiatric disorders and the characteristics associated with the neurodevelopmental disorders were assessed using several measurements at the time of hospital admission. The effects of neurodevelopmental disorders on the drinking courses of the subjects were then estimated. RESULTS: The presence of a current depressive episode or any anxiety disorder significantly lowered the abstinence rates during the follow-up period (p = 0.0195 and p = 0.0214, respectively). ADHD traits as assessed using the ADHD Self-report Scale (ASRS) predicted a significantly poorer abstinence rate (p = 0.0296). Similarly, attention-deficit characteristics assessed objectively through interviews predicted a significantly lower abstinence rate (p = 0.0346), and a sensitivity analysis enhanced these results (p = 0.0019). When the drinking patterns were classified into three groups, the subjects with attention-deficit characteristics had a significantly higher rate of "Recurrence" and lower rates of "Abstinence" and "Controlled drinking" (p = 0.013). In a multivariate proportional hazards analysis, the ASRS score was significantly correlated with the re-drinking risk (p = 0.003). CONCLUSION: ADHD traits had significant effects on not only abstinence rates, but also on drinking pattern. The presence of ADHD traits, especially attention-deficit characteristics, influenced the drinking courses of alcohol-dependent individuals after hospital treatment.

Alcohol dependence severity determines the course of treatment-seeking patients.

BACKGROUND: While accumulating evidence suggests a relation between the severity of alcohol dependence and the risk of its recurrence, the impact of dependence severity on the course of the disorder has not been carefully evaluated. The present study examined the impact of several severity indices of alcohol dependence on the drinking course after inpatient treatment. METHODS: This prospective study was conducted over a 12-month period following alcohol treatment at a specialized hospital. A total of 712 consecutively admitted alcohol-dependent patients were targeted for enrollment at the time of their hospitalization, with 637 patients registered and followed. The characteristics and severity of the subjects were assessed using multiple methods at admission, with their course after discharge followed continuously using mailed questionnaires that queried them regarding their drinking behavior. RESULTS: Greater severity of dependence, assessed using the number of ICD-10 diagnostic criteria met, was associated with a lower rate of abstinence during the study period (p = 0.035). The rate of abstinence also decreased significantly as the baseline blood gamma-glutamyl transferase value and Alcohol Dependence Scale (ADS) score increased (p = 0.031 and p = 0.0002, respectively). In multivariate Cox proportional hazards analyses, the group with the most severe ADS scores had a significantly greater risk of relapse to drinking than the group with the least severe scores (HR = 2.67, p = 0.001). Dependence severity also associated with the drinking pattern; participants in both the controlled drinking group and the abstinence group had lower ADS scores at admission and a later age at first drinking (p = 0.001 and p < 0.001, respectively) than those with poorer drinking outcomes. CONCLUSIONS: The present study showed that more severe alcohol dependence predicts a poorer course after alcohol treatment, as reflected by findings on multiple measures. These results suggest that assessing the dependence severity at the outset of treatment could be useful both in predicting treatment outcome and targeting interventions to alcohol-dependent individuals who need additional support in their recovery.

Roadmap on quantum nanotechnologies.

Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.

Transcriptional switch for programmed cell death in pith parenchyma of sorghum stems.

Pith parenchyma cells store water in various plant organs. These cells are especially important for producing sugar and ethanol from the sugar juice of grass stems. In many plants, the death of pith parenchyma cells reduces their stem water content. Previous studies proposed that a hypothetical D gene might be responsible for the death of stem pith parenchyma cells in Sorghum bicolor, a promising energy grass, although its identity and molecular function are unknown. Here, we identify the D gene and note that it is located on chromosome 6 in agreement with previous predictions. Sorghum varieties with a functional D allele had stems enriched with dry, dead pith parenchyma cells, whereas those with each of six independent nonfunctional D alleles had stems enriched with juicy, living pith parenchyma cells. D expression was spatiotemporally coupled with the appearance of dead, air-filled pith parenchyma cells in sorghum stems. Among D homologs that are present in flowering plants, Arabidopsis ANAC074 also is required for the death of stem pith parenchyma cells. D and ANAC074 encode previously uncharacterized NAC transcription factors and are sufficient to ectopically induce programmed death of Arabidopsis culture cells via the activation of autolytic enzymes. Taken together, these results indicate that D and its Arabidopsis ortholog, ANAC074, are master transcriptional switches that induce programmed death of stem pith parenchyma cells. Thus, targeting the D gene will provide an approach to breeding crops for sugar and ethanol production.

Radio-Frequency-Detected Fast Charge Sensing in Undoped Silicon Quantum Dots.

Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters, and therefore, its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by radio frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 µs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.

Effect of salt tolerance on biomass production in a large population of sorghum accessions.

Salinity causes major reductions in cultivated land area, crop productivity, and crop quality, and salt-tolerant crops have been required to sustain agriculture in salinized areas. The annual C4 crop plant Sorghum bicolor (L.) Moench is salt tolerant, with large variation among accessions. Sorghum's salt tolerance is often evaluated during early growth, but such evaluations are weakly related to overall performance. Here, we evaluated salt tolerance of 415 sorghum accessions grown in saline soil (0, 50, 100, and 150 mM NaCl) for 3 months. Some accessions produced up to 400 g per plant of biomass and showed no growth inhibition at 50 mM NaCl. Our analysis indicated that the genetic factors that affected biomass production under 100 mM salt stress were more different from those without salt stress, comparing to the differences between those under 50 mM and 100 mM salt stress. A genome-wide association study for salt tolerance identified two single-nucleotide polymorphisms (SNPs) that were significantly associated with biomass production, only at 50 mM NaCl. Additionally, two SNPs were significantly associated with salt tolerance index as an indicator for growth response of each accession to salt stress. Our results offer candidate genetic resources and SNP markers for breeding salt-tolerant sorghum.

Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array.

We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the duration of the charge signal distinguishing the two measurement outcomes. This method allows us to evaluate the charge measurement error and the spin-to-charge conversion error separately. We specify conditions under which this method can be used, and project its general applicability to scalable quantum dot arrays in GaAs or silicon.

Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response.

Radio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

Quantum tomography of an entangled three-qubit state in silicon.

Quantum entanglement is a fundamental property of coherent quantum states and an essential resource for quantum computing1. In large-scale quantum systems, the error accumulation requires concepts for quantum error correction. A first step toward error correction is the creation of genuinely multipartite entanglement, which has served as a performance benchmark for quantum computing platforms such as superconducting circuits2,3, trapped ions4 and nitrogen-vacancy centres in diamond5. Among the candidates for large-scale quantum computing devices, silicon-based spin qubits offer an outstanding nanofabrication capability for scaling-up. Recent studies demonstrated improved coherence times6-8, high-fidelity all-electrical control9-13, high-temperature operation14,15 and quantum entanglement of two spin qubits9,11,12. Here we generated a three-qubit Greenberger-Horne-Zeilinger state using a low-disorder, fully controllable array of three spin qubits in silicon. We performed quantum state tomography16 and obtained a state fidelity of 88.0%. The measurements witness a genuine Greenberger-Horne-Zeilinger class quantum entanglement that cannot be separated into any biseparable state. Our results showcase the potential of silicon-based spin qubit platforms for multiqubit quantum algorithms.

Designs for a two-dimensional Si quantum dot array with spin qubit addressability.

Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose a practical 3 × 3 quantum dot device design and a larger-scale design as a longer-term target. The design goal is to realize qubit connectivity to the four nearest neighbors while ensuring addressability. We show that a 3 × 3 quantum dot array can execute four-qubit Grover's algorithm more efficiently than the one-dimensional counterpart. To scale up the two-dimensional array beyond 3 × 3, we propose a novel structure with ferromagnetic gate electrodes. Our results showcase the possibility of medium-sized quantum processors in Si with fast quantum logic gates and long coherence times.

A silicon quantum-dot-coupled nuclear spin qubit.

Single nuclear spins in the solid state are a potential future platform for quantum computing1-3, because they possess long coherence times4-6 and offer excellent controllability7. Measurements can be performed via localized electrons, such as those in single atom dopants8,9 or crystal defects10-12. However, establishing long-range interactions between multiple dopants or defects is challenging13,14. Conversely, in lithographically defined quantum dots, tunable interdot electron tunnelling allows direct coupling of electron spin-based qubits in neighbouring dots15-20. Moreover, the compatibility with semiconductor fabrication techniques21 may allow for scaling to large numbers of qubits in the future. Unfortunately, hyperfine interactions are typically too weak to address single nuclei. Here we show that for electrons in silicon metal-oxide-semiconductor quantum dots the hyperfine interaction is sufficient to initialize, read out and control single 29Si nuclear spins. This approach combines the long coherence times of nuclear spins with the flexibility and scalability of quantum dot systems. We demonstrate high-fidelity projective readout and control of the nuclear spin qubit, as well as entanglement between the nuclear and electron spins. Crucially, we find that both the nuclear spin and electron spin retain their coherence while moving the electron between quantum dots. Hence we envision long-range nuclear-nuclear entanglement via electron shuttling3. Our results establish nuclear spins in quantum dots as a powerful new resource for quantum processing.

Quantum non-demolition measurement of an electron spin qubit.

Measurements of quantum systems inevitably involve disturbance in various forms. Within the limits imposed by quantum mechanics, there exists an ideal projective measurement that does not introduce a back action on the measured observable, known as a quantum non-demolition (QND) measurement1,2. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defined quantum dot. We entangle the single spin with a two-electron, singlet-triplet ancilla qubit via the exchange interaction3,4 and then read out the ancilla in a single shot. This procedure realizes a disturbance-free projective measurement of the single spin at a rate two orders of magnitude faster than its relaxation. The QND nature of the measurement protocol5,6 enables enhancement of the overall measurement fidelity by repeating the protocol. We demonstrate a monotonic increase of the fidelity over 100 repetitions against arbitrary input states. Our analysis based on statistical inference is tolerant to the presence of the relaxation and dephasing. We further exemplify the QND character of the measurement by observing spontaneous flips (quantum jumps)7 of a single electron spin. Combined with the high-fidelity control of spin qubits8-13, these results will allow for various measurement-based quantum state manipulations including quantum error correction protocols14.

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

The isolation of qubits from noise sources, such as surrounding nuclear spins and spin-electric susceptibility 1-4 , has enabled extensions of quantum coherence times in recent pivotal advances towards the concrete implementation of spin-based quantum computation. In fact, the possibility of achieving enhanced quantum coherence has been substantially doubted for nanostructures due to the characteristic high degree of background charge fluctuations 5-7 . Still, a sizeable spin-electric coupling will be needed in realistic multiple-qubit systems to address single-spin and spin-spin manipulations 8-10 . Here, we realize a single-electron spin qubit with an isotopically enriched phase coherence time (20 µs) 11,12 and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge noise-rather than conventional magnetic noise-as highlighted by a 1/f spectrum extended over seven decades of frequency. The qubit exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average, offering a promising route to large-scale spin-qubit systems with fault-tolerant controllability.

Coherent transfer of electron spin correlations assisted by dephasing noise.

Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of electron spins confined in semiconductor quantum dots. One party of an entangled spin pair, prepared at a single site, is transferred to the next site and then adiabatically swapped with a third spin using a transition across a multi-level avoided crossing. This process is accelerated by the noise-induced dephasing through a variant of the quantum Zeno effect, without sacrificing the coherence of the entangled state. Our finding brings insight into the spin dynamics in open quantum systems coupled to noisy environments, opening an avenue to quantum state manipulation utilizing decoherence effects.

Higher-order spin and charge dynamics in a quantum dot-lead hybrid system.

Understanding the dynamics of open quantum systems is important and challenging in basic physics and applications for quantum devices and quantum computing. Semiconductor quantum dots offer a good platform to explore the physics of open quantum systems because we can tune parameters including the coupling to the environment or leads. Here, we apply the fast single-shot measurement techniques from spin qubit experiments to explore the spin and charge dynamics due to tunnel coupling to a lead in a quantum dot-lead hybrid system. We experimentally observe both spin and charge time evolution via first- and second-order tunneling processes, and reveal the dynamics of the spin-flip through the intermediate state. These results enable and stimulate the exploration of spin dynamics in dot-lead hybrid systems, and may offer useful resources for spin manipulation and simulation of open quantum systems.

Detection and control of charge states in a quintuple quantum dot.

A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the five dots as confirmed by measurements of the charge states of the three nearest dots to the respective charge sensor. The gate performance of the measured stability diagram is well reproduced by a capacitance model. These results provide an important step towards realizing controllable large scale multiple quantum dot systems.

A fault-tolerant addressable spin qubit in a natural silicon quantum dot.

Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified silicon quantum dots, only the second approach has been used, leaving the qubit operation slow. We apply the first approach to demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet that is optimally designed for fast spin control. This optimized design allows access to Rabi frequencies up to 35 MHz, which is two orders of magnitude greater than that achieved in previous studies. We find the optimum Q = 140 in such high-frequency range at a Rabi frequency of 10 MHz. This leads to a qubit fidelity of 99.6% measured via randomized benchmarking, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum dot-based qubits. This result can inspire contributions to quantum computing from industrial communities.

Single-electron Spin Resonance in a Quadruple Quantum Dot.

Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.

Fast probe of local electronic states in nanostructures utilizing a single-lead quantum dot.

Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs. Here we demonstrate a new kind of micro-probe: a fast single-lead quantum dot probe, which utilizes a quantum dot coupled only to the target structure through a tunneling barrier and fast charge readout by RF reflectometry. The probe can directly access the local electronic states with wide bandwidth. The probe can also access more electronic states, not just those around the Fermi level, and the operations are robust against bias voltages and temperatures.