RESUMO
Ultraviolet(UV) photodetectors(PDs) can monitor UV radiation, enabling it to be effective for many applications, such as communication, imaging and sensing. The rapid progress on portable and wearable optoelectronic devices places a great demand on self-powered PDs. However, high-performance self-powered PDs are still limited. Herein we display a transparent and self-powered PD based on a p-CuI/n-TiO2heterojunction, which exhibits a high on-off ratio (â¼104at 310 nm) and a fast response speed (rise time/decay time = 0.11 ms/0.72 ms) without bias. Moreover, the device shows an excellent UV-selective sensitivity as a solar-blind UV PD with a high UV/visible rejection ratio (R300 nm/R400 nm= 5.3 × 102), which can be ascribed to the wide bandgaps of CuI and TiO2. This work provides a feasible route for the construction of transparent, self-powered PDs based on p-n heterojunctions.
RESUMO
As a wide-bandgap semiconductor material, titanium dioxide (TiO2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2 -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2 -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.
RESUMO
Monolithical integration of the promising optoelectronic material with mature and inexpensive silicon circuitry contributes to simplifying device geometry, enhancing performance, and expanding new functionalities. Herein, a lead-free halide perovskite Cs3 Bi2 I9 single-crystalline thin film (SCTF), with thickness ranging from 900 nm to 4.1 µm and aspect ratio up to 1666, is directly integrated on various substrates including Si wafer, through a facile and low-temperature solution-processing method. The growth kinetics of the lead-free halide perovskite SCTF are elucidated by in situ observation, and the solution supersaturation is controlled to reduce the inverse-temperature crystallization nucleation density and elongate the evaporation growth. The excellent lattice match and band alignment between Si(111) and Cs3 Bi2 I9 (001) facets promote photogenerated charge dissociation and extraction, resulting in boosting the photoelectric sensitivity by 10-200 times compared with photodetectors based on other substrates. More importantly, this silicon-compatible perovskite SCTF photodetector exhibits a high switching ratio of 3000 and a fast response of 1.5 µs, which are higher than most reported state-of-the-art lead-free halide perovskite photodetectors. This work not only gives an in-depth understanding of the perovskite precursor solution chemistry, but also demonstrates the great potential of monolithical integration of lead-free halide perovskite SCTF with a silicon wafer for high-performance photodetectors.