RESUMO
Localized optical resonances in metallic nanostructures have been increasingly used in color printing, demonstrating unprecedented resolution but limited in color gamut. Here, we introduce a new nanostructure design, which broadens the gamut while retaining print resolution. Instead of metals, silicon nanostructures that exhibit localized magnetic and electric dipole resonances were fabricated on a silicon substrate coated with a Si3N4 index matching layer. Index matching allows a suppression of substrate effects, thus enabling Kerker's conditions to be met, that is, sharpened transitions in the reflectance spectra leading to saturated colors. This nanostructure design achieves a color gamut superior to sRGB, and is compatible with CMOS processes. The presented design could enable compact high-resolution color displays and filters, and the use of a Si3N4 antireflection coating can be readily extended to designs with nanostructures fabricated using other high-index materials.
RESUMO
Asymmetric optical transmission plays a key role in many optical systems. In this work, we propose and numerically demonstrate a dielectric-metal metasurface that can achieve high-performance asymmetric transmission for linearly polarized light in the near-infrared region. Most notably, it supports a forward transmittance peak (with a transmittance of 0.70) and a backward transmittance dip (with a transmittance of 0.07) at the same wavelength of 922 nm, which significantly enhances operation bandwidth and the contrast ratio between forward and backward transmittances. Mechanism analyses reveal that the forward transmittance peak is caused by the unidirectional excitation of surface plasmon polaritons and the first Kerker condition, whereas the backward transmittance dip is due to reflection from the metal film and a strong toroidal dipole response. Our work provides an alternative and simple way to obtain high-performance asymmetric transmission devices.