RESUMO
Perovskite light-emitting diodes (PeLEDs) have gained significant attention due to their promising optoelectronic properties and potential applications in the fields of lighting and display devices. Despite their potential, PeLEDs face challenges related to stability, high turn-on voltage, and low external quantum efficiency (EQE) which has restricted their broad acceptance. Most research efforts have predominantly focused on refining the properties of the perovskite films. However, it is becoming more apparent that interfacial layers and device architecture are crucial for achieving stability and high efficiency, making them indispensable components in PeLED development. This perspective highlights remarkable advancements in PeLED devices, with a primary focus on modifying adjacent layers interfacing with the perovskite film.