Assessment of Measurement Uncertainty for S-Parameter Measurement Based on Covariance Matrix.

S-parameters are widely used to detail the scattering parameters of radio frequency (RF) components and microwave circuit modules. The vector network analyzer (VNA) is the most commonly used device for measuring S-parameters. Given the multiple frequency points, complex values, and intricate uncertainty propagation involved, accurately assessing the uncertainty of S-parameter measurements is difficult. In this study, we proposed a new method for assessing S-parameter uncertainty based on the covariance matrices, tracing back to the nominal uncertainty of calibration standards. First, we analyzed the relevant theory of uncertainty assessment using covariance matrices and subsequently deduced the mechanism of Type B uncertainty propagating from calibration standards to error model coefficients and S-parameter measurements to evaluate Type B measurement uncertainty. In this study, a novel measurement system was constructed for measuring grounded coplanar waveguides by using a VNA and calibration standards with 8- and 12-error models. Initially, the model assessed the Type B uncertainty of measuring four S-parameters of a grounded coplanar waveguide. Next, the VNA calibrated with the 12-error model was used to conduct multiple repeated measurements to assess the Type A uncertainty of the grounded coplanar waveguide. Finally, the composite uncertainty was constructed, which demonstrated that the proposed method can be used for assessing the uncertainty of S-parameters.

Method to Change the Through-Hole Structure to Broaden Grounded Coplanar Waveguide Bandwidth.

A grounded coplanar waveguide (GCPW), as a millimeter wave special transmission line, can be used to calibrate broadband oscilloscope probes. A method to change the through-hole structure to widen the GCPW is investigated in this paper. The effect of the through-hole array on the band-width of the GCPW is investigated and verified using COMSOL Multiphysics simulation software. Finally, the S-parameters of the fabricated GCPWs are measured by a vector network analyzer, and the results show that they have an insertion loss > -3 dB and return loss < -10 dB in the frequency range of DC to 60 GHz, which satisfies the design requirements.

A Compact UWB Antenna with Independently Controllable Notch Bands.

A minimally-sized, triple-notched band ultra-wideband (UWB) antenna, useful for many applications, is designed, analyzed, and experimentally validated in this paper. A modified maple leaf-shaped main radiating element with partial ground is used in the proposed design. An E-shaped resonator, meandered slot, and U-shaped slot are implemented in the proposed design to block the co-existing bands. The E-shaped resonator stops frequencies ranging from 1.8⁻2.3 GHz (Advanced Wireless System (AWS1⁻AWS2) band), while the meandered slot blocks frequencies from 3.2⁻3.8 GHz (WiMAX band). The co-existing band ranging from 5.6⁻6.1 GHz (IEEE 802.11/HIPERLANband) is blocked by utilizing the U-shaped section in the feeding network. The notched bands can be independently controlled over a wide range of frequencies using specific parameters. The proposed antenna is suitable for many applications because of its flat gain, good radiation characteristics at both principal planes, uniform group delay, and non-varying transfer function ( S 21 ) for the entire UWB frequency range.

Cylindrical Dielectric Resonator Antenna-Based Sensors for Liquid Chemical Detection.

A compact, cylindrical dielectric resonator antenna (CDRA), using radio frequency signals to identify different liquids is proposed in this paper. The proposed CDRA sensor is excited by a rectangular slot through a 3-mm-wide microstrip line. The rectangular slot has been used to excite the CDRA for H E M 11 mode at 5.25 GHz. Circuit model values (capacitance, inductance, resistance and transformer ratios) of the proposed CDRA are derived to show the true behaviour of the system. The proposed CDRA acts as a sensor due to the fact that different liquids have different dielectric permittivities and, hence, will be having different resonance frequencies. Two different types of CDRA sensors are designed and experimentally validated with four different liquids (Isopropyl, ethanol, methanol and water).

A Triaxial Applicator for the Measurement of the Electromagnetic Properties of Materials.

The design, analysis, and fabrication of a prototype triaxial applicator is described. The applicator provides both reflected and transmitted signals that can be used to characterize the electromagnetic properties of materials in situ. A method for calibrating the probe is outlined and validated using simulated data. Fabrication of the probe is discussed, and measured data for typical absorbing materials and for the probe situated in air are presented. The simulations and measurements suggest that the probe should be useful for measuring the properties of common radar absorbing materials under usual in situ conditions.

De-embedding method for a sensing area characterization of planar microstrip sensors without evaluating error networks.

A de-embedding method for determining all scattering (S-) parameters (e.g., characterization) of a sensing area of planar microstrip sensors (two-port network or line) is proposed using measurements of S-parameters with no calibration. The method requires only (partially known) non-reflecting line and reflecting line standards to accomplish such a characterization. It utilizes uncalibrated S-parameter measurements of a reflecting line, direct and reversed configurations of a non-reflecting line, and direct and reversed configurations of the sensing area. As different from previous similar studies, it performs such a characterization without any sign ambiguity. The method is first validated by extracting the S-parameters of a bianisotropic metamaterial slab, as for a two-port network (line), constructed by split-ring-resonators (SRRs) from waveguide measurements. Then, it is applied for determining the S-parameters of a sensing area of a microstrip sensor involving double SRRs next to a microstrip line. The root-mean-square-error (RMSE) analysis was utilized to analyze the accuracy of our method in comparison with other techniques in the literature. It has been observed from such an analysis that our proposed de-embedding technique has the lowest RMSE values for the extracted S-parameters of the sensing area of the designed sensor in comparison with those of the compared other de-embedding techniques in the literature, and have similar RMSE values in reference to those of the thru-reflect-line calibration technique. For example, while RMSE values of real and imaginary parts of the forward reflection S-parameter of this sensing area are, respectively, around 0.0271 and 0.0279 for our de-embedding method, those of one of the compared de-embedding techniques approach as high as 0.0318 and 0.0324.

A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy.

This paper presents a new metal-contact RF MEMS switch based on an Al-Sc alloy. The use of an Al-Sc alloy is intended to replace the traditional Au-Au contact, which can greatly improve the hardness of the contact, and thus improve the reliability of the switch. The multi-layer stack structure is adopted to achieve the low switch line resistance and hard contact surface. The polyimide sacrificial layer process is developed and optimized, and the RF switches are fabricated and tested for pull-in voltage, S-parameters, and switching time. The switch shows high isolation of more than 24 dB and a low insertion loss of less than 0.9 dB in the frequency range of 0.1-6 GHz.

Automatic Piecewise Extreme Learning Machine-Based Model for S-Parameters of RF Power Amplifier.

This paper presents an automatic piecewise (Auto-PW) extreme learning machine (ELM) method for S-parameters modeling radio-frequency (RF) power amplifiers (PAs). A strategy based on splitting regions at the changing points of concave-convex characteristics is proposed, where each region adopts a piecewise ELM model. The verification is carried out with S-parameters measured on a 2.2-6.5 GHz complementary metal oxide semiconductor (CMOS) PA. Compared to the long-short term memory (LSTM), support vector regression (SVR), and conventional ELM modeling methods, the proposed method performs excellently. For example, the modeling speed is two orders of magnitude faster than SVR and LSTM, and the modeling accuracy is more than one order of magnitude higher than ELM.

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network.

In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored. A dual-extreme learning machine (D-ELM) structure with an adaptive genetic algorithm (AGA) optimization process is used to simulate the fresh S-parameters of InP HBT devices and the degradation of S-parameters after accelerated aging, respectively. In addition to the reliability parametric inputs of the original aging problem, the S-parameter degradation trend obtained from the aging small-signal equivalent circuit is used as additional information to inject into the D-ELM structure. Good agreement was achieved between measured and predicted results of the degradation of S-parameters within a frequency range of 0.1 to 40 GHz.

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration.

High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and other devices. In this study, HAR TSVs with a diameter of 11 µm and an aspect ratio of 10:1 are successfully fabricated in a low-cost process flow. Conformal polyimide (PI) liners are deposited using a vacuum-assisted spin coating technique, and the effects of spin coating time and speed on the deposition results are discussed. Then, continuous Cu seed layers are fabricated by sequential sputtering and ultrasound-assisted electroless plating. Additionally, void-free and seamless Cu conductors are formed by electroplating. Moreover, a semi-additive method is used to fabricate the redistribution layers (RDLs) on the insulating layers of photosensitive PI (PSPI). Notably, a plasma bombardment process is introduced to remove residual PSPI in the contact windows between RDLs and central pillars. Results show that the resistance of a single TSV from a daisy chain of 144 TSVs with density of 2000/mm2 is about 28 mΩ. Additionally, the S-parameters of a single TSV are obtained using L-2L de-embedding technology, and the experimental and simulated results agree well. The proposed low-cost fabrication technologies and the related electrical characterization of PI-TSVs are significant for the application of HAR TSVs in modern heterogeneous integration systems.

A RF Redundant TSV Interconnection for High Resistance Si Interposer.

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

Preparation and Characterization of Semi-Flexible Substrates from Natural Fiber/Nickel Oxide/Polycaprolactone Composite for Microstrip Patch Antenna Circuitries for Microwave Applications.

The study intended to utilizing waste organic fiber for low-cost semi-flexible substrate fabrication to develop microstrip patch antennas for low band communication applications. All the semi-flexible substrates (12.2 wt. % OPEFF/87.8 wt. % PCL, 12.2 wt. % NiO/87.8 wt. % PCL, and 25 wt. % OPEFF/25 wt. % NiO/50 wt. % PCL) were fabricated by oil palm empty fruit fiber (OPEFF) mixed with nickel oxide (NiO) nanoparticles reinforced with polycaprolactone (PCL) as a matrix using a Thermo Haake blending machine. The morphology and crystalized structure of the substrates were tested using Fourier transform infrared (FTIR) spectrometry, X-ray diffraction (X-RD) technique, and scanning electron microscopy (SEM), respectively. The thermal stability behavior of the substrates was analyzed using thermogravimetric analysis (TGA) and differential thermogravimetric (DTG) thermogram. The dielectric properties were characterized by an open-ended coaxial probe (OEC) connected with Agilent N5230A PNA-L Network Analyzer included the 85070E2 dielectric software at frequency range of 8 to 12 GHz. The experimental results showed that NiO/OPEFF/PCL composites exhibit controllable permittivity dielectric constant εr'(f) between 1.89 and 4.2 (Farad/meter, (F/m)), with loss factor εr''(f) between 0.08 and 0.62 F/m, and loss tangent (tan δ) between 0.05 and 0.18. Return losses measurement of the three patch antennas OPEFF/PCL, NiO/PCL, and OPEFF/NiO/PCL are -11.93, -14.2 and -16.3 dB respectively. Finally, the commercial software package, Computer Simulation Technology Microwave Studio (CSTMWS), was used to investigate the antenna performance by simulate S-parameters based on the measured dielectric parameters. A negligible difference is found between the measured and simulated results. Finally, the results obtained encourage the possibility of using natural fibers and nickel oxide in preparation of the substrates utilize at microwave applications.

The Effect of MWCNTs Filler on the Absorbing Properties of OPEFB/PLA Composites Using Microstrip Line at Microwave Frequency.

Oil palm empty fruit bunch (OPEFB) fiber/polylactic acid (PLA)-based composites filled with 6-22 wt.% multi-walled carbon nanotubes (MWCNTs) were prepared using a melt blend method. The composites were analyzed using X-ray diffraction (XRD), Fourier transforms infrared (FTIR), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) of the MWCNTs. The composites were characterized for complex permittivity using the coaxial probe at 8-12 GHz range and the transmission/reflection coefficients were measured through micro strip line. The dielectric permittivity measurements carried out at X-band frequency revealed that 22 wt.% MWCNTs nanocomposite display higher dielectric constant (ε') and dielectric loss (ε″) values of 4.23 and 0.65, respectively. A maximum absorption loss of 15.2 dB was obtained for the 22 wt.% nanocomposites at 11.75 GHz. This result suggests that PLA/OPEFB/MWCNTs composites are a promising cheap and lightweight material for the effective microwave absorption in the X-band frequency range.