Growth of Semiconducting Single-Walled Carbon Nanotubes Array by Precisely Inhibiting Metallic Tubes Using ZrO2 Nanoparticles.

Synthesis of high-quality single-walled carbon nanotubes arrays with pure semiconducting type is crucial for the fabrication of integrated circuits in nanoscale. However, the naturally grown carbon nanotubes usually have diverse structures and properties. Here the bicomponent catalyst using Au and ZrO2 is designed and prepared. The Au nanoparticle serves as the catalysts for carbon feedstock cracking and facilitating the nucleation of carbon nanotubes, whereas the close-connected ZrO2 forms a localized etching zone around Au by releasing lattice oxygen and to inhibit the nucleation of metallic carbon nanotubes precisely. The obtained single-walled carbon nanotubes array show a high semiconducting content of >96%, on the basis of good performance of field-effect transistor devices. And such building of localized etching zone is compatible with other catalyst systems as a universal and efficient method for the scalable production of semiconducting carbon nanotubes.

Thermoelectric properties of sorted semiconducting single-walled carbon nanotube sheets.

Single-walled carbon nanotubes (SWNTs), especially their semiconducting type, are promising thermoelectric (TE) materials due to their high Seebeck coefficient. In this study, the in-plane Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ) of sorted semiconducting SWNT (s-SWNT) free-standing sheets with different s-SWNT purities are measured to determine the figure of merit ZT. We find that the ZT value of the sheets increases with increasing s-SWNT purity, mainly due to an increase in Seebeck coefficient while the thermal conductivity remaining constant, which experimentally proved the superiority of the high purity s-SWNT as TE materials for the first time. In addition, from the comparison between sorted and unsorted SWNT sheets, it is recognized that the difference of ZT between unsorted SWNT and high-purity s-SWNT sheet is not remarkable, which suggests the control of carrier density is necessary to further clarify the superiority of SWNT sorting for TE applications.

Selective and self-validating breath-level detection of hydrogen sulfide in humid air by gold nanoparticle-functionalized nanotube arrays.

We demonstrate the selective detection of hydrogen sulfide at breath concentration levels under humid airflow, using a self-validating 64-channel sensor array based on semiconducting single-walled carbon nanotubes (sc-SWCNTs). The reproducible sensor fabrication process is based on a multiplexed and controlled dielectrophoretic deposition of sc-SWCNTs. The sensing area is functionalized with gold nanoparticles to address the detection at room temperature by exploiting the affinity between gold and sulfur atoms of the gas. Sensing devices functionalized with an optimized distribution of nanoparticles show a sensitivity of 0.122%/part per billion (ppb) and a calculated limit of detection (LOD) of 3 ppb. Beyond the self-validation, our sensors show increased stability and higher response levels compared to some commercially available electrochemical sensors. The cross-sensitivity to breath gases NH3 and NO is addressed demonstrating the high selectivity to H2S. Finally, mathematical models of sensors' electrical characteristics and sensing responses are developed to enhance the differentiation capabilities of the platform to be used in breath analysis applications. Electronic Supplementary Material: Supplementary material (details on the dielectrophoretic deposition, AuNP functionalization optimization, full range of experimental and model H2S sensing response up to 820 ppb, and sensing response to NO gas) is available in the online version of this article at 10.1007/s12274-021-3771-7.

Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices.

In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an IDS on/off ratio larger than 20 while 70% of the CNTFETs had an IDS on/off ratio lower than 20. The highest IDS on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices.

Silicon Shadow Mask Technology for Aligning and In Situ Sorting of Semiconducting SWNTs for Sensitivity Enhancement: A Case Study of NO2 Gas Sensor.

Single-walled carbon nanotubes (SWNTs) are incorporated in different device configurations such as chemiresistors and field-effect transistors (FETs) as a sensing element for the fabrication of highly sensitive and specific biochemical sensors. For this purpose, sorting and aligning of semiconducting SWNTs between the electrodes is advantageous. In this work, a silicon shadow mask fabricated using conventional semiconductor processes and silicon bulk micromachining was used to make metal contacts over SWNTs with a minimum feature of 1 µm gap between the electrodes. The developed silicon shadow mask-based metal contact patterning process is cost-effective and free from photoresist (PR) chemical coatings and thermal processing. After a detailed investigation, sodium dodecyl sulfate (SDS), an anionic surfactant, along with ultrasonication process, was found to be effective for the removal of unclamped and metallic SWNTs, resulting in aligned and clamped semiconducting SWNTs between the electrodes. The presence of aligned semiconducting SWNTs was confirmed using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), and Raman spectroscopy techniques. The fabricated devices were tested for nitrogen dioxide (NO2) gas sensing as a test case. The sensitivity enhancement of ∼21 to 76% in the 20-80 ppm NO2 concentration range has been observed in the case of aligned semiconducting SWNT devices compared to the random network SWNT-based sensors.

Real-Time Monitoring of Cellular Cultures with Electrolyte-Gated Carbon Nanotube Transistors.

Cell-based biosensors constitute a fundamental tool in biotechnology, and their relevance has greatly increased in recent years as a result of a surging demand for reduced animal testing and for high-throughput and cost-effective in vitro screening platforms dedicated to environmental and biomedical diagnostics, drug development, and toxicology. In this context, electrochemical/electronic cell-based biosensors represent a promising class of devices that enable long-term and real-time monitoring of cell physiology in a noninvasive and label-free fashion, with a remarkable potential for process automation and parallelization. Common limitations of this class of devices at large include the need for substrate surface modification strategies to ensure cell adhesion and immobilization, limited compatibility with complementary optical cell-probing techniques, and the need for frequency-dependent measurements, which rely on elaborated equivalent electrical circuit models for data analysis and interpretation. We hereby demonstrate the monitoring of cell adhesion and detachment through the time-dependent variations in the quasi-static characteristic current curves of a highly stable electrolyte-gated transistor, based on an optically transparent network of printable polymer-wrapped semiconducting carbon-nanotubes.

Covalent Atomic Bridges Enable Unidirectional Enhancement of Electronic Transport in Aligned Carbon Nanotubes.

Interconnecting the surfaces of nanomaterials without compromising their outstanding mechanical, thermal, and electronic properties is critical in the design of advanced bulk structures that still preserve the novel properties of their nanoscale constituents. As such, bridging the π-conjugated carbon surfaces of single-walled carbon nanotubes (SWNTs) has special implications in next-generation electronics. This study presents a rational path toward the improvement of the electrical transport in aligned semiconducting SWNT films by deposition of metal atoms. The formation of conducting Cr-mediated pathways between the parallel SWNTs increases the transverse (intertube) conductance while having a negligible effect on the parallel (intratube) transport. In contrast, doping with Li has a predominant effect on the intratube electrical transport of aligned SWNT films. Large-scale first-principles calculations of electrical transport on aligned SWNTs show good agreement with the experimental electrical measurements and provide insight into the changes that different metal atoms exert on the density of states near the Fermi level of the SWNTs and the formation of transport channels.