Functional proteomics reveals that Slr0237 is a SigE-regulated glycogen debranching enzyme pivotal for glycogen breakdown.

The group 2 σ factor for RNA polymerase SigE plays important role in regulating central carbon metabolism in cyanobacteria. However, the regulation of SigE for these pathways at a proteome level remains unknown. Using a sigE-deficient strain (ΔsigE) of Synechocystis sp. PCC 6803 and quantitative proteomics, we found that SigE depletion induces differential protein expression for sugar catabolic pathways including glycolysis, oxidative pentose phosphate (OPP) pathway, and glycogen catabolism. Two glycogen debranching enzyme homologues Slr1857 and Slr0237 are found differentially expressed in ΔsigE. Glycogen determination indicated that Δslr0237 accumulated glycogen under photomixotrophic condition but was unable to utilize these reserves in the dark, whereas Δslr1857 accumulates and utilizes glycogen in a similar way as the WT strain does in the same condition. These results suggest that Slr0237 plays the major role as the glycogen debranching enzyme in Synechocystis.

A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor Manufacturing.

The Gate-All-Around Field-Effect Transistor (GAAFET) is proposed as a successor to Fin Field-Effect Transistor (FinFET) technology to increase channel length and improve the device performance. The GAAFET features a complex multilayer structure, which complicates the manufacturing process. One of the most critical steps in GAAFET fabrication is the selective lateral etching of the SiGe layers, essential for forming the inner-spacer. Industry commonly encounters a non-uniform etching profile during this step. In this paper, a continuous two-step dry etching model is proposed to investigate the mechanism behind the formation of the non-uniform profiles. The model consists of four modules: anisotropic etching simulation, Ge atom diffusion simulation, Si/SiGe etch selectivity calculation and SiGe selective etching simulation. By calibrating and verifying this model with experimental data, the edge rounding and gradient etching rates along the sidewall surface are successfully simulated. Based on further examination of the influence of chamber pressure on the profile using this model, the inner-spacer shape is improved experimentally by appropriately reducing the chamber pressure. This work aims to provide valuable insights for etching process recipes in advanced GAAFETs manufacturing.

Food-Pollen Cross-Reactivity and its Molecular Diagnosis in China.

PURPOSE OF REVIEW: Plant-derived foods are one of the most common causative sources of food allergy in China, with a significant relationship to pollinosis. This review aims to provide a comprehensive overview of this food-pollen allergy syndrome and its molecular allergen diagnosis to better understand the cross-reactive basis. RECENT FINDINGS: Food-pollen cross-reactivity has been mainly reported in Northern China, Artemisia pollen is the major related inhalant source, followed by tree pollen (Betula), while grass pollen plays a minor role. Pollen allergy is relatively low in Southern China, with allergies to grass pollen being more important than weed and tree pollens. Rosaceae fruits and legume seeds stand out as major related allergenic foods. Non-specific lipid transfer protein (nsLTP) has been found to be the most clinically relevant cross-reacting allergenic component, able to induce severe reactions. PR-10, profilin, defensin, chitinase, and gibberellin-regulated proteins are other important cross-reactive allergen molecules. Artemisia pollen can induce allergenic cross-reactions with a wide range of plant-derived foods in China, and spring tree pollens (Betula) are also important. nsLTP found in both pollen and plant-derived food is considered the most significant allergen in food pollen cross-reactivity. Component-resolved diagnosis with potential allergenic proteins is recommended to improve diagnostic accuracy and predict the potential risk of causing allergic symptoms.

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence.

We investigate the nanoheteroepitaxy (NHE) of SiGe and Ge quantum dots (QDs) grown on nanotips (NTs) substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the NHE over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the NTs with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The NTs arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

Fabrication and structural and magnetic properties of spark plasma sintered group-IV diluted magnetic semiconductor Fe-doped SiGe alloys.

Fe-doped SiGe bulk alloys are fabricated using non-equilibrium spark plasma sintering (SPS) and their structure and ferromagnetic and magneto-transport properties are investigated. X-ray diffraction and high-resolution transmission electron microscope measurements show that the obtained alloys are composed of SiGe polycrystals. Magnetization measurements reveal that the Fe-doped SiGe alloys exhibit ferromagnetism up to 259 K, and their Curie temperature increases with Fe doping concentration up to 8%. Moreover, transport measurements of the Fe-doped SiGe alloys show typical metal-insulator transition characteristics of doped semiconductors as well as anomalous Hall effect and intriguing positive-to-negative magnetoresistance, indicating that the obtained alloys are diluted magnetic semiconductors (DMSs). Our results provide insight into the SPS-prepared Fe-doped SiGe bulk alloys and may be useful for the design, fabrication, and application of group-IV DMSs.

Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals.

Room temperature lateral p+-i-n+light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+and n+contact regions made it possible to reduce the impurity activation temperature from 800 °Ð¡-1100 °Ð¡ to 600 °Ð¡, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55µm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55µm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

Biomarkers in asthma, potential for therapeutic intervention.

Asthma is a heterogeneous disease characterized by multiple phenotypes with varying risk factors and therapeutic responses. This Commentary describes research on biomarkers for T2-"high" and T2-"low" inflammation, a hallmark of the disease. Patients with asthma who exhibit an increase in airway T2 inflammation are classified as having T2-high asthma. In this endotype, Type 2 cytokines interleukins (IL)-4, IL-5, and IL-13, plus other inflammatory mediators, lead to increased eosinophilic inflammation and elevated fractional exhaled nitric oxide (FeNO). In contrast, T2-low asthma has no clear definition. Biomarkers are considered valuable tools as they can help identify various phenotypes and endotypes, as well as treatment response to standard treatment or potential therapeutic targets, particularly for biologics. As our knowledge of phenotypes and endotypes expands, biologics are increasingly integrated into treatment strategies for severe asthma. These treatments block specific inflammatory pathways or single mediators. While single or composite biomarkers may help to identify subsets of patients who might benefit from these treatments, only a few inflammatory biomarkers have been validated for clinical application. One example is sputum eosinophilia, a particularly useful biomarker, as it may suggest corticosteroid responsiveness or reflect non-compliance to inhaled corticosteroids. As knowledge develops, a meaningful goal would be to provide individualized care to patients with asthma.

A 26-28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications.

This paper presents a high-gain low-noise amplifier (LNA) operating at the 5G mm-wave band. The full design combines two conventional cascode stages: common base (CB) and common emitter (CS). The design technique reduces the miller effect and uses low-voltage supply and low-current-density transistors to simultaneously achieve high gain and low noise figures (NFs). The two-stage LNA topology is analyzed and designed using 0.25 µm SiGe BiCMOS process technology from NXP semiconductors. The measured circuit shows a small signal gain at 26 GHz of 26 dB with a gain error below 1 dB on the entire frequency band (26-28 GHz). The measured average NF is 3.84 dB, demonstrated over the full frequency band under 15 mA current consumption per stage, supplied with a voltage of 3.3 V.

Enhancing the Responsiveness of Thermoelectric Gas Sensors with Boron-Doped and Thermally Annealed SiGe Thin Films via Low-Pressure Chemical Vapor Deposition.

Thermoelectric gas sensor (THGS) devices with catalysts and Si0.8Ge0.2 thin films of different boron doping levels of 1018, 1019, and 1020 cm-3 were fabricated, and their transport properties are investigated. SiGe films were deposited on Si3N4/SiO2 multilayers on Si substrates using low-pressure chemical vapor deposition (LPCVD) and thermally annealed at 1050 °C. The Seebeck coefficients of the SiGe films were increased after thermal annealing, ranging from 191 to 275 µV/K at temperatures of 74 to 468 °C in air, and reaching the highest power factor of 6.78 × 10-4 W/mK2 at 468 °C. The thermal conductivity of the SiGe films varied from 2.4 to 3.0 W/mK at 25 °C. The THGS detection performance was tested for the H2 gas in air from 0.01 to 1.0%, and compared to the thermoelectric properties of the SiGe films. The high-temperature annealing treatment process was successful in enhancing the thermoelectric performance of both the SiGe films and sensor devices, achieving the best THGS performance with the sensor device fabricated from the annealed SiGe film with 1018 cm-3 boron-doped Si0.8Ge0.2.

Allergen desensitization reduces the severity of relapsed alopecia areata in dust-mite allergic patients.

Atopy may be a facilitating factor in some alopecia areata (AA) patients with early disease onset and more severe/extensive AA. The underlying immune mechanisms are unknown, but allergen responses may support a pro-inflammatory environment that indirectly promotes AA. To investigate the long-term effect of allergen immunotherapy (AIT) against house dust mite (HDM) allergy on disease severity and prognosis for AA patients. An observational comparative effectiveness study was conducted on 69 AA patients with HDM allergy. 34 patients received conventional/traditional AA treatment (TrAA) plus AIT (AIT-TrAA), and 35 patients received TrAA alone. Serum total immunoglobulin E (tIgE), HDM specific IgE (sIgE), HDM specific IgG4 (sIgG4) and cytokines (IL-4, IL-5, IL-10, IL-12, IL-13, IL-33, IFNγ) were quantified in these patients, together with 58 non-allergic AA patients and 40 healthy controls. At the end of the 3-year desensitization course, the AIT-TrAA group presented with lower SALT scores than the TrAA group, especially in non-alopecia totalis/universalis (AT/U) patients and pre-adolescent AT/U patients (age ≤ 14). In patients with elevated tIgE levels before AIT, a decrease in tIgE was correlated to reduced extent of AA on completion of the AIT course. After desensitization, elevation of IL-5 and decrease of IL-33 were observed in HDM allergic-AA patients. Desensitization to HDM in allergic AA patients reduces the severity of relapse-related hair loss over the 3-year AIT treatment course, possibly via opposing Th2 dominance. This adjunctive treatment may help reduce disease severity and curtail the disease process in allergic patients with AA.

The combination of Ara h 2-sIgE and basophil activation test could be an alternative to oral food challenge in cases of suspected peanut allergy.

BACKGROUND: Most children with peanut sensitisation do not have a clinical peanut allergy (PA). Oral food challenge (OFC) is then necessary to diagnose PA and assess the reactive dose of the allergen. However, OFC is laborious to perform, expensive and stressful. We evaluated whether in vitro tests, such as basophil activation test (BAT), allergen-specific IgE (sIgE) and their combination, could be used to replace OFC for the diagnosis of PA in children. METHODS: Ninety-one patients aged 6 months to 18 years with suspected PA were prospectively recruited. These patients then underwent an OFC to assess PA. Whole peanut-sIgE, Ara h 2-sIgE, Ara h 8-sIgE and %CD63+ basophils (CCR3+ /SCClow ) to peanut measured by BAT were investigated for PA diagnosis. RESULTS: Forty-one patients had a positive peanut OFC, and the remaining 50 were only sensitised. All patients with Ara h 2-sIgE >7 kUA /L were allergic to peanut. A threshold of 6% for activated basophils yielded a sensitivity of 95% and a specificity of 54%. All patients with Ara h 2-sIgE ≤7 kUA /L and BAT ≤6% (n = 22) had a negative OFC except for one who presented an oral syndrome due to PR-10 sensitisation. CONCLUSIONS: We have shown that Ara h 2-sIgE >7 kUA/L is a discriminating threshold for the diagnosis of PA. Furthermore, when Ara h 2-sIgE ≤7 kUA/L and BAT ≤6%, patients do not need to adjust their diet and, thus, do not need an OFC.

Bilateral sidewall engineering Si1-xGexiTFET for low power display application.

In this work, we demonstrate the performance enhancement of bottom-gated inductive line-tunneling TFET (iTFET) through the integration of bilateral sidewall engineering with SiGe mole fraction variation, considering the feasibility of the fabrication process. We also employ a metal-semiconductor interface for carrier induction to improve theION, resulting in a lower subthreshold swing average (S.Savg). Using Sentaurus TCAD simulations, we show that the dominant current mechanism is line tunneling, and the hump effect is mitigated by using SiGe with different mole fractions on the sidewalls. Compared to conventional tunnel field-effect transistors, which require at least three doping processes and annealing, the proposed device requires only one doping process and utilizes the metal-semiconductor interface for carrier induction, significantly reducing the fabrication cost and thermal budget. These measurement based simulations show that theS.Savgis improved to 21.5 mV dec-1with anION/IOFFratio of 106 atVD= 0.2 V. This is the first time that a TFT with a subthreshold swing of less than 60 mV dec-1has been proposed, so it will save much more power in the future and displays with high energy efficiency can be realized and widely used in IoT applications.

Direct growth of crystalline SiGe nanowires on superconducting NbTiN thin films.

Novel heterostructures created by coupling one-dimensional semiconductor nanowires with a superconducting thin film show great potential toward next-generation quantum computing. Here, by growing high-crystalline SiGe nanowires on a NbTiN thin film, the resulting heterostructure exhibits Ohmic characteristics as well as a shift of the superconducting transition temperature (Tc). The structure was characterized at atomic resolution showing a sharp SiGe/NbTiN interface without atomic interdiffusion. Lattice spacing, as calculated from large-area x-ray diffraction experiments, suggests a potential preferredd-spacing matching between (200) NbTiN and (110) SiGe grains. The observed out-of-plane compressive strain within the NbTiN films coupled with SiGe nanowires explains the downward shift of the superconductivity behavior. The presented results post scientific insights toward functional heterostructures by coupling multi-dimensional materials, which could enable tunable superconductivity that benefits the quantum science applications.

Basophil activation test with progressively less heated forms of egg distinguishes egg allergic from tolerant children.

BACKGROUND AND OBJECTIVE: Diagnosis of egg allergy through basophil activation testing (BAT) has been mainly performed with an egg white extract or individual egg allergens rather than clinically more representative whole-egg extracts. Impact of heating on whole-egg extract allergenicity remains unassessed.Validating BAT with gradually less heated whole-egg extracts in egg allergy diagnosis and as tolerance marker. METHODS: CD63-based BAT was performed with five progressively less heated extracts from cake, hard-boiled egg, omelet, soft-boiled, and raw egg in 10 egg allergic (EA), 10 complete egg tolerant (ET) and 12 non-egg-sensitized non-allergic (NEA) children. Cutoffs and diagnostic accuracy measures were established through ROC analysis. Changes in basophil response were assessed in 12 baked egg tolerant children undergoing an 8-month gradual egg reintroduction protocol with BAT and oral food challenges prior to each reintroduction step. RESULTS: Basophil responses to all egg extracts were increased in EA, but not in ET and NEA children. Responses decreased progressively with more heated egg extracts. Compared to ET children, EA children showed higher basophil sensitivity for all egg extracts. Negative BAT responses predicted clinical tolerance with a 90-100% sensitivity, 100% specificity, and false positive rate of 2.78%. In comparison, egg sIgE's (<0.35 kUA/L) had a lower specificity of 50-78% with a false positive rate of 40%. Basophil reactivity and sensitivity tended to decrease in baked egg tolerant children undergoing gradual egg reintroduction, concurrent with tolerance development. CONCLUSION: BAT with progressively less heated egg preparations is a sensitive and highly specific tool to discriminate EA from ET children.

Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking.

In this work, the design of a wideband low-noise amplifier (LNA) using a resistive feedback network is proposed for potential multi-band sensing, communication, and radar applications. For achieving wide operational bandwidth and flat in-band characteristics simultaneously, the proposed LNA employs a variety of circuit design techniques, including a voltage-current (shunt-shunt) negative feedback configuration, inductive emitter degeneration, a main branch with an added cascode stage, and the shunt-peaking technique. The use of a feedback network and emitter degeneration provides broadened transfer characteristics for multi-octave coverage and a real impedance for input matching, respectively. In addition, the cascode stage pushes the band-limiting low-frequency pole, due to the Miller capacitance, to a higher frequency. Lastly, the shunt-peaking approach is optimized for the compensation of a gain reduction at higher frequency bands. The wideband LNA proposed in this study is fabricated using a commercial 0.13 µm silicon-germanium (SiGe) BiCMOS process, employing SiGe heterojunction bipolar transistors (HBTs) as the circuit's core active elements in the main branch. The measurement results show an operational bandwidth of 2.0-29.2 GHz, a noise figure of 4.16 dB (below 26.5 GHz, which was the measurement limit), and a total power consumption of 23.1 mW under a supply voltage of 3.3 V. Regarding the nonlinearity associated with large-signal behavior, the proposed LNA exhibits an input 1-dB compression (IP1dB) point of -5.42 dBm at 12 GHz. These performance numbers confirm the strong viability of the proposed approach in comparison with other state-of-the-art designs.

Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures.

Interfaces are ubiquitous in semiconductor low-dimensional systems used in electronics, photonics, and quantum computing. Understanding their atomic-level properties has thus been crucial to controlling the basic behavior of heterostructures and optimizing the device performance. Herein, we demonstrate that subnanometer interfacial broadening in heterostructures induces localized energy states. This phenomenon is predicted within a theory incorporating atomic-level interfacial details obtained by atom probe tomography. The experimental validation is achieved using heteroepitaxial (Si1-xGex)m/(Si)m superlattices as a model system demonstrating the existence of additional paths for hole-electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are evaluated at variable superlattice thickness and periodicity. By mapping the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV, thus extending the optical absorption to lower energies. This phenomenon is shown to provide an optical fingerprint for a straightforward and nondestructive probe of the subnanometer broadening in heterostructures.

Influence of chitotriosidase gene polymorphisms on oxidative stress and susceptibility to Aspergillus infection among exposed workers.

Chitotriosidase (CHIT1) is involved in the innate defense against chitin-containing pathogens. In the present study, we sought to investigate the role of CHIT1 gene polymorphisms on susceptibility to Aspergillus infection in addition to oxidative stress caused by infection. CHIT1 gene polymorphisms were identified in 60 Aspergillus-positive workers by REFLP. We also measured concentrations of the CHIT1 enzyme, total antioxidant capacity (TAC), and malondialdehyde (MDA). The majority of workers were wild-type (AA) (66.5%), followed by heterozygous (AB) (28.5%), and homozygous mutants (BB) (5%). The mean concentrations of specific IgE for all Aspergillus species were affected by change in CHIT1 genotypes. Our findings indicate that decreased CHIT1 activity in homozygous mutant CHIT1 allele is associated with a subsequent decrease in TAC levels, resulting in an increased risk of fungal infection and accumulation of oxidant MDA. Thus, CHIT1 enzyme activity plays a critical role in the susceptibility of WWTP workers to fungal infections.

Advanced preparation of plan-view specimens on a MEMS chip for in situ TEM heating experiments.

In situ transmission electron microscopy (TEM) is a powerful tool for advanced material characterization. It allows real-time observation of structural evolution at the atomic level while applying different stimuli such as heat. However, the validity of analysis strongly depends on the quality of the specimen, which has to be prepared by thinning the bulk material to electron transparency while maintaining the pristine properties. To address this challenge, a novel method of TEM samples preparation in plan-view geometry was elaborated based on the combination of the wedge polishing technique and an enhanced focused ion beam (FIB) workflow. It involves primary mechanical thinning of a broad sample area from the backside followed by FIB-assisted installation on the MEMS-based sample carrier. The complete step-by-step guide is provided, and the method's concept is discussed in detail making it easy to follow and adapt for diverse equipment. The presented approach opens the world of in situ TEM heating experiments for a vast variety of fragile materials. The principle and significant advantage of the proposed method are demonstrated by new insights into the stability and thermal-induced strain relaxation of Ge Stranski-Krastanov islands on Si during in situ TEM heating. Supplementary Information: The online version contains supplementary material available at 10.1557/s43577-021-00255-5.

Hexagonal silicon-germanium nanowire branches with tunable composition.

Hexagonal SiGe-2H has been recently shown to have a direct bandgap, and holds the promise to be compatible with silicon technology. Hexagonal Si and Ge have been grown on an epitaxial lattice matched template consisting of wurtzite GaP and GaAs, respectively. Here, we present the growth of hexagonal Si and SiGe nanowire branches grown from a wurtzite stem by the vapor-liquid-solid growth mode, which is substantiated byin situtransmission electron microscopy. We show that the composition can be tuned through the whole range of stoichiometry from Si to Ge, and the possibility to realize Si and SiGe heterostructures in these branches.

Engineering of dense arrays of Vertical Si1-xGexnanostructures.

Vertical nanostructure technologies are becoming more important for the down scaling of nanoelectronic devices such as logic transistors or memories. Such devices require dense vertical nanostructured channel arrays (VNCA) that can be fabricated through a top-down approach based on group IV materials. We present progresses on the top-down fabrication of highly anisotropic and ultra-dense Si1-xGex(x= 0, 0.2, 0.5) VNCAs. Dense nanowire and nanosheet patterns were optimized through high resolution lithography and transferred onto Si1-xGexsubstrates by anisotropic reactive ion etching with a fluorine chemistry. The right gas mixtures for a given Ge content resulted in perfectly vertical and dense arrays. Finally we fabricated oxide shell/SiGe core heterostructures by dry- and wet-thermal oxidation and evaluated their applicability for nanostructure size engineering, as already established for silicon nanowires. The impact of the nanostructured shape (wire or sheet), size and Ge content on the oxide growth were investigated and analysed in detail through transmission electron microscopy.