Skin-Friendly Flexible Ultraviolet Detectors Based on Reversibly Deformable Worm-Like Polymer Nanoparticles.

Flexible ultraviolet (UV) light detection technology has important applications in wearable devices, smart sensors, and other fields and attracts much attention in recent years. However, for most semiconductor-based UV detectors, the elastic modulus between rigid semiconductors and flexible substrates is mismatched, which makes it difficult to fabricate UV detectors that meet the needs of wearable devices. Herein, a fully flexible, large-scale, skin-friendly UV photodetector component centered on photo-responsive worm-like polymer nanoparticles (NPs) is developed, and the resulting device can quantitatively detect UV illumination. Skin-friendly poly(vinyl alcohol) (PVA), amphiphilic azobenzene-containing polymer NPs (AzNPs), and water-soluble ionic liquids (IL) are formed into (AzNPs-IL)/PVA fabrics by electrospinning. There are interactions such as hydrogen bonding among PVA, AzNPs, and IL, which make the material system stable. The UV detector made of the fabric realizes UV sensing through the illuminance-mechanical stress-electrical signal conversion mechanism. It is capable of achieving a response time of 9 s, a detection range of 10-150 mW cm-2, and stability for 1000 cycle tests upon 365 nm UV irradiation. Moreover, it has good skin affinity, and the water contact angle of the fabric is only 23.57°, which holds great promise for wearable smart devices.

Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids.

The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.

Bending-Insensitive Intrinsically Flexible Ultraviolet Encoding Devices Based on Piezoelectric Nanogenerator-Supplied Liquid Crystalline Polymer Fabrics.

It is significantly challenging for state-of-the-art wearable electronics to stably monitor physicochemical signals under dynamic motions. Herein, a bending-insensitive, self-powered, and intrinsically flexible UV detector has been realized based on well-designed oriented composite fabrics, consisting of ionic liquid (IL)-containing liquid crystalline polymers (ILCPs) and piezoelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] nanogenerators. The novel composite fabrics establish effective UV illuminance-internal stress-electric signal conversion by coupling resistive and piezoelectric effects, with a fast response time of 190 ms. Particularly, benefiting from the intrinsic flexibility of composite fabrics, the ILCP/P(VDF-TrFE) device can maintain stable performance under dynamic bending even if the frequency is up to 2.5 Hz, with a bending insensitivity of less than 1% performance variation under 1.0 mW cm-2 UV light. Combined with the Internet of Things and the American Standard Code for Information Interchange (ASCII), wearable encoding electronics have been successfully implemented with a printing speed of 3.2 s per character under dynamic bending.

Perovskite versus ZnCuInS/ZnS Luminescent Nanoparticles in Wavelength-Shifting Layers for Sensor Applications.

In this work, the application of quantum dots is evaluated in order to sensitize the commercially popular Si detectors in the UV range. The wavelength-shifting properties of two types of all-inorganic halide perovskite quantum dots as well as ZnCuInS/ZnS quantum dots are determined in order to assess their potential in the effective enhancement of the sensors' detection range. In a further part of the study, the wavelength-shifting layers are formed by embedding the quantum dots in two kinds of polymers: PMMA or Cyclic Olefin Polymer. The performance of the layers is evaluated by transmission and PLE measurement. Incorporating the nanoparticles seemingly increases the transmittance in the UV range by several percent. The observed phenomenon is proportional to the quantum dots to polymer concentration, which indicates the successful conversion action of the luminescent agents.

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review.

Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

A Solar-Blind UV Detector Based on Graphene-Microcrystalline Diamond Heterojunctions.

An ultraviolet detector is demonstrated through a whole-wafer, thin diamond film transfer process to realize the heterojunction between graphene and microcrystalline diamond (MCD). Conventional direct transfer processes fail to deposit graphene onto the top surface of the MCD film. However, it is found that the 2 µm thick MCD diamond film can be easily peeled off from the growth silicon substrate to expose its smooth backside for the graphene transfer process for high-quality graphene/MCD heterojunctions. A vertical graphene/MCD/metal structure is constructed as the photodiode device using graphene as the transparent top electrode for solar-blind ultraviolet sensing with high responsivity and gain factor. As such, this material system and device architecture could serve as the platform for next-generation optoelectronic systems.

Wide Response Range Photoelectrochemical UV Detector Based on Anodized TiO2-Nanotubes@Ti@quartz Structure.

Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of electrodes on light absorption. We obtained a TiO2-nanotubes@Ti@quartz photoanode structure by precise treatment of a commercial Ti mesh by anodic oxidation. The structure can absorb any light in the near-UV band and has superior stability to other metal electrodes. The final encapsulated photoelectrochemical UV detectors exhibit good switching characteristics with a response time below 100 ms. The mechanism of the oxidation conditions on the photovoltaic performance of the device was investigated by the electrochemical impedance method, and we obtained the optimal synthesis conditions. Response tests under continuous spectroscopy confirm that the response range of the device is extended from 300-400 nm to 240-400 nm. This idea of a built-in collector is an effective way to extend the response range of a photoelectrochemical detector.

Application of Graphene-Combined Rare-Earth Oxide (Sm2O3) in Solar-Blind Ultraviolet Photodetection.

Rare-earth oxide Sm2O3 is theoretically expected to be used in the preparation of ultraviolet (UV) detectors with low dark currents and high radiation resistance due to its characteristics of a wide bandgap, a high dielectric constant, and high chemical stability. However, certain features that rare-earth oxides possess, such as high resistivity and weak photoelectric response currents, have hindered relevant research on these kinds of materials in the field of UV detection. In this work, a p-Gr/i-Sm2O3/n-SiC heterojunction photovoltaic solar-blind UV sensor was constructed for the first time. Because of the high mobility of graphene (Gr) and the contribution of double built-in electric fields in the heterojunction, the collection efficiency of photogenerated carriers has been greatly improved, with the typical shortcomings of high resistivity and poor photoelectric response performance of rare-earth oxides having been overcome. This detector has exhibited outstanding performance at 0 V, including a responsivity of 19.8 mA/W and an open-circuit voltage of 0.68 V. Additionally, this detector has a detectivity as high as 1.2 × 1011 jones, which is at the front position of most ultraviolet detectors. The fabrication of this high-performance Sm2O3-based photovoltaic UV detector has broadened the application fields of rare-earth oxide semiconductors. Therefore, this project has important value for future research in relevant fields.

High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials.

This study investigates the performance of single-crystalline nanomaterials of wide-band gap naphthalene diimide (NDI) derivatives with methylene-bridged aromatic side chains. Such materials are found to be easily used as high-performance, visible-blind near-UV light detectors. NDI single-crystalline nanoribbons are assembled using a simple solution-based process (without solvent-inclusion problems), which is then applied to organic phototransistors (OPTs). Such OPTs exhibit excellent n-channel transistor characteristics, including an average electron mobility of 1.7 cm2 V-1 s-1, sensitive UV detection properties with a detection limit of ∼1 µW cm-2, millisecond-level responses, and detectivity as high as 1015 Jones, demonstrating the highly sensitive organic visible-blind UV detectors. The high performance of our OPTs originates from the large face-to-face π-π stacking area between the NDI semiconducting cores, which is facilitated by methylene-bridged aromatic side chains. Interestingly, NDI-based nanoribbon OPTs exhibit a distinct visible-blind near-UV detection with an identical detection limit, even under intense visible light illumination (for example, 104 times higher intensity than UV light intensity). Our findings demonstrate that wide-band gap NDI-based nanomaterials are highly promising for developing high-performance visible-blind UV photodetectors. Such photodetectors could potentially be used for various applications including environmental and health-monitoring systems.

High-Performance Self-Powered UV Detector Based on SnO2-TiO2 Nanomace Arrays.

Photoelectrochemical cell-typed self-powered UV detectors have attracted intensive research interest due to their low cost, simple fabrication process, and fast response. In this paper, SnO2-TiO2 nanomace arrays composed of SnO2 nanotube trunk and TiO2 nanobranches were prepared using soft chemical methods, and an environment-friendly self-powered UV photodetector using this nanostructure as the photoanode was assembled. Due to the synergistic effect of greatly accelerated electron-hole separation, enhanced surface area, and reduced charge recombination provided by SnO2-TiO2 nanomace array, the nanostructured detector displays an excellent performance over that based on bare SnO2 arrays. The impact of the growing time of TiO2 branches on the performance of UV photodetector was systematically studied. The device based on optimized SnO2-TiO2 nanomace arrays exhibits a high responsivity of 0.145 A/W at 365 nm, a fast rising time of 0.037 s, and a decay time of 0.015 s, as well as excellent spectral selectivity. This self-powered photodetector is a promising candidate for high-sensitivity, high-speed UV-detecting application.

In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN.

Nonpolar a-plane GaN epitaxial films were grown on an r-plane sapphire using the plasma-assisted molecular beam epitaxy system, with various nitrogen plasma power conditions. The crystallinity of the films was characterized by high-resolution X-ray diffraction and reciprocal space mapping. Using the X-ray "rocking curve-phi scan", [0002], [1-100], and [1-102] azimuth angles were identified, and interdigitated electrodes along these directions were fabricated to evaluate the direction-dependent UV photoresponses. UV responsivity ( R) and internal gain ( G) were found to be dependent on the azimuth angle and in the order of [0002] > [1-102] > [1-100], which has been attributed to the enhanced crystallinity and lowest defect density along [0002] azimuth. The temporal response was very stable irrespective of growth conditions and azimuth angles. Importantly, response time, responsivity, and internal gain were 210 ms, 1.88 A W-1, and 648.9%, respectively, even at a bias as low as 1 V. The results were validated using the Silvaco Atlas device simulator, and experimental observations were consistent with simulated results. Overall, the photoresponse is dependent on azimuth angles and requires further optimization, especially for materials with in-plane crystal anisotropy.

Semi-Transparent ZnO-CuI/CuSCN Photodiode Detector with Narrow-Band UV Photoresponse.

The ZnO homogeneous pn junction photodiode is quite difficult to fabricate due to the absence of stable p-type ZnO. So exploring reliable p-type materials is necessary to build a heterogeneous pn junction with n-type ZnO. Herein, we develop a simple and low-cost solution-processed method to obtain inorganic p-type CuI/CuSCN composite film with compact morphology, high conductivity, and low surface state. The improved performance of CuI/CuSCN composite film can be confirmed based on high-rectification ratio, responsivity, and open voltage of ZnO-CuI/CuSCN photodiode UV detectors. Moreover, photodiodes with novel top electrodes are investigated. Compared with commonly used Au and graphene/Ag nanowire (NWs) electrode, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) ( PEDOT: PSS) electrode prepared by Meyer rod-coating technique opens one route to obtain a semitransparent photodiode. The photodiode with PEDOT: PSS as the top electrode under reverse illumination has the highest photocurrent density due to higher UV transmittance of PEDOT: PSS transparent electrode compared with ITO glass. The low-energy consumption, and high responsivity, UV to visible rejection ratio and air stability make this ZnO-CuI/CuSCN photodiode quite promising in the UV-A detection field.