Irremovable Mn-Bi Site Mixing in MnBi2Te4.

MnBi2Te4, an antiferromagnetic topological insulator, was theoretically predicted to have a gapped surface state on its (111) surface. However, a much smaller gapped or even gapless surface state has been observed experimentally, which is thought to be caused by the defects in MnBi2Te4. Here, we have theoretically identified the antisite MnBi and BiMn as dominant defects and revealed their evolution during the phase transition from MnTe/Bi2Te3 to MnBi2Te4. We found that the complete elimination of MnBi and BiMn defects in MnBi2Te4 by simple annealing is almost impossible due to the high migration barrier in kinetics. Moreover, the gap of the Dirac point-related bands in a MnBi2Te4 monolayer would be eliminated with an increasing concentration of MnBi and BiMn defects, which could explain the experimentally unobserved large-gap surface state in MnBi2Te4. Our results provide an insight into the theoretical understanding of the quality and the experimentally measured topological properties of the synthesized MnBi2Te4.

Dynamic Evolution of Antisite Defect and Coupling Anionic Redox in High-Voltage Ultrahigh-Ni Cathode.

High-voltage ultrahigh-Ni cathodes (LiNixCoyMn1-x-yO2, x≥0.9) can significantly enhance the energy density and cost-effectiveness of Li-ion batteries beyond current levels. However, severe Li-Ni antisite defects and their undetermined dynamic evolutions during high-voltage cycling limit the further development of these ultrahigh-Ni cathodes. In this study, we quantify the dynamic evolutions of the Li-Ni antisite defect using operando neutron diffraction and reveal its coupling relationship with anionic redox, another critical challenge restricting ultrahigh-Ni cathodes. We detect a clear Ni migration coupled with an unstable oxygen lattice, which accompanies the oxidation of oxygen anions at high voltages. Based on these findings, we propose that minimized Li-Ni antisite defects and controlled Ni migrations are essential for achieving stable high-voltage cycling structures in ultrahigh-Ni cathodes. This is further demonstrated by the optimized ultrahigh-Ni cathode, where reduced dynamic evolutions of the Li-Ni antisite defect effectively inhibit the anionic redox, enhancing the 4.5 V cycling stability.

Rational Design of Cu Vacancies and Antisite Defects for Boosting the Thermoelectric Properties of CuGaTe2-Based Compounds.

CuGaTe2-based compounds show great promise in the application for high-temperature thermoelectric power generation; however, its wide bandgap feature poses a great challenge for enhancing thermoelectric performance via structural defects modulation and doping the system. Herein, it is discovered that the presence of GaCu antisite defects in the CuGaTe2 compound promotes the formation of Cu vacancies, and vice versa, which tends to form the charge-neutral structure defects combination with one GaCu antisite defect and two Cu vacancies. The accumulation of Cu vacancies in the structure of the (Cu2Te)x(Ga2Te3)1-x compounds evolves into twins and stacking faults. This in conjunction with GaCu antisite defects intensify the point defects phonon scattering, yielding a dramatic reduction on lattice thermal conductivity from 6.95 W m-1 K-1 for the pristine CuGaTe2 sample to 2.98 W m-1 K-1 for the (Cu2Te)0.45(Ga2Te3)0.55 sample at room temperature. Furthermore, the high concentration of charge-neutral defects combination narrows the band gap and increases the carrier concentration, leading to an improved power factor of 1.58 mW/mK2 at 600 K for the (Cu2Te)0.49(Ga2Te3)0.51 sample, which is 41% higher than for the pristine CuGaTe2 sample. Consequently, the highest ZT value of 0.82 is achieved at 915 K for Cu0.015(Cu2Te)0.48(Ga2Te3)0.52, which represents an enhancement of about 22% over that of the pristine CuGaTe2 compound.

Synergistic Tailoring of Electronic and Thermal Transports in Thermoelectric Se-Free n-Type (Bi,Sb)2Te3.

Se-free n-type (Bi,Sb)2Te3 thermoelectric materials, outperforming traditional n-type Bi2(Te,Se)3, emerge as a compelling candidate for practical applications of recovering low-grade waste heat. A 100% improvement in the maximum ZT of n-type Bi1.7Sb0.3Te3 is demonstrated by using melt-spinning and excess Te-assisted transient liquid phase sintering (LPS). Te-rich sintering promotes the formation of intrinsic defects (TeBi), elevating the carrier concentration and enhancing the electrical conductivity. Melt-spinning with excess Te fine-tunes the electronic band, resulting in a high power-factor of 0.35 × 10-3 W·m-1 K-2 at 300 K. Rapid volume change during sintering induces the formation of dislocation networks, significantly suppressing the lattice thermal conductivity (0.4 W·m-1 K-1). The developed n-type legs achieve a high maximum ZT of 1.0 at 450 K resulting in a 70% improvement in the output power of the thermoelectric device (7.7 W at a temperature difference of 250 K). This work highlights the synergy between melt-spinning and transient LPS, advancing the tailored control of both electronic and thermal properties in thermoelectric technology.

Intrinsic Defects and the Inducing Conduction Mechanism of Langasite-Type High-Temperature Piezoelectric Crystals.

Increasing the crystal resistivity is critically important for enhancing the signal-to-noise ratio and improving the sensing capability of high-temperature piezoelectric sensors based on langasite-type crystals. The resistivity of structural ordered langasite-type crystals is much higher compared to that of the disordered crystals. Here, we selected structural ordered Ca3TaGa3Si2O14 (CTGS) and disordered La3Ga5SiO14 (LGS) as representatives to investigate the microscopic conduction mechanism and further reveal the origin of the different resistivities of the ordered and disordered langasite-type crystals at elevated temperatures. By combining first-principles calculations and experimental investigations, we found that the different conductivity behaviors of the ordered and disordered crystals originate from different types of point defects formed in the crystal and their different contributions to the conductivity. For the disordered LGS crystal, the oxygen vacancies are apt to be formed at high temperatures, promoting the transition of valence electrons and yielding high conductivity. For the ordered CTGS crystal, the dominant TaGa antisite defects can introduce an electron-hole recombination center in the electronic band gap, significantly shortening the carrier lifetime and thus reducing the conductivity. This provides effective guidance to improve the resistivity performance of langasite-type crystals at high temperatures by optimizing the experimental conditions, such as oxygen atmosphere treatment, antisite defect modification, etc.

The effect of antisite defects on the mechanical and dynamic stability of Nb3Al.

The A15-type conventional superconductor Nb3Al alloys has been considered as an ideal candidate for next generation high field magnets due to its higher superconducting properties and less sensitivity to stain than that of industrialized Nb3Sn superconductor. First-principles methods are employed to study the potential point defects, vacancy and antisite defects in deviating stoichiometric Nb3Al alloys and their effect on structure and mechanical properties. Our results show that antisite defects are easier to be produced than vacancy defects, and NbAlantisite defects can keep the tetragonal structure of Nb3Al. Furthermore, the influence of antisite defects on dynamic stability of Nb3Al is investigated together with NbAldefects. With the increase of Nb antisite defect content and the formation of orderly arrangement, we found the phonon spectrum yields no more soft phonon modes, which is in contradiction with the dynamical instability of stoichiometric Nb3Al with no defects. Our calculations indicate Nb antisite defects play a crucial role on the dynamic stability of Nb3Al compounds.

Direct Observation of Room-Temperature Stable Magnetism in LaAlO3/SrTiO3 Heterostructures.

Along with an unexpected conducting interface between nonmagnetic insulating perovskites LaAlO3 and SrTiO3 (LaAlO3/SrTiO3), striking interfacial magnetisms have been observed in LaAlO3/SrTiO3 heterostructures. Interestingly, the strength of the interfacial magnetic moment is found to be dependent on oxygen partial pressures during the growth process. This raises an important, fundamental question on the origin of these remarkable interfacial magnetic orderings. Here, we report a direct evidence of room-temperature stable magnetism in a LaAlO3/SrTiO3 heterostructure prepared at high oxygen partial pressure by using element-specific soft X-ray magnetic circular dichroism at both Ti L3,2 and O K edges. By combining X-ray absorption spectroscopy at both Ti L3,2 and O K edges and first-principles calculations, we qualitatively ascribe that this strong magnetic ordering with dominant interfacial Ti3+ character is due to the coexistence of LaAlO3 surface oxygen vacancies and interfacial (TiAl-AlTi) antisite defects. On the basis of this new understanding, we revisit the origin of the weak magnetism in LaAlO3/SrTiO3 heterostructures prepared at low oxygen partial pressures. Our calculations show that LaAlO3 surface oxygen vacancies are responsible for the weak magnetism at the interface. Our result provides direct evidence on the presence of room-temperature stable magnetism and a novel perspective to understand magnetic and electronic reconstructions at such strategic oxide interfaces.

Elemental Precursor Solution Processed (Cu1-xAgx)2ZnSn(S,Se)4 Photovoltaic Devices with over 10% Efficiency.

The partial substitution of Cu+ with Ag+ into the host lattice of Cu2ZnSn(S,Se)4 thin films can reduce the open-circuit voltage deficit (Voc,deficit) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this paper, elemental Cu, Ag, Zn, Sn, S, and Se powders were dissolved in solvent mixture of 1,2-ethanedithiol (edtH2) and 1,2-ethylenediamine (en) and used for the formation of (Cu1-xAgx)2ZnSn(S,Se)4 (CAZTSSe) thin films with different Ag/(Ag + Cu) ratios. The key feature of this approach is that the impurity atoms can be absolutely excluded. Further results indicate that the variations of grain size, band gap, and depletion width of the CAZTSSe layer are generally determined by Ag substitution content. Benefiting from the Voc enhancement (∼50 mV), the power conversion efficiency is successfully increased from 7.39% (x = 0) to 10.36% (x = 3%), which is the highest efficiency of Ag substituted devices so far.

Ambient Carbon Dioxide Capture Using Boron-Rich Porous Boron Nitride: A Theoretical Study.

The development of highly efficient sorbent materials for CO2 capture under ambient conditions is of great importance for reducing the impact of CO2 on the environment and climate change. In this account, strong CO2 adsorption on a boron antisite (BN) in boron-rich porous boron nitrides (p-BN) was developed and studied. The results indicated that the material achieved larger adsorption energies of 2.09 eV (201.66 kJ/mol, PBE-D). The electronic structure calculations suggested that the introduction of BN in p-BN induced defect electronic states in the energy gap region, which strongly impacted the adsorption properties of the material. The bonding between the BN defect and the CO2 molecule was clarified, and it was found that the electron donation first occurred from CO2 to the BN double-acceptor state then, followed by electron back-donation from BN to CO2 accompanied by the formation of a BN-C bond. The thermodynamic properties indicated that the adsorption of CO2 on the BN defect to form anionic CO2δ- species was spontaneous at temperatures below 350 K. Both the large adsorption energies and the thermodynamic properties ensured that p-BN with a BN defect could effectively capture CO2 under ambient conditions. Finally, to evaluate the energetic stability, the defect formation energies were estimated. The formation energy of the BN defects was found to strongly depend on the chemical environment, and the selection of different reactants (B or N sources) would achieve the goal of reducing the formation energy. These findings provided a useful guidance for the design and fabrication of a porous BN sorbent for CO2 capture.