Density functional theory for doped TiO2: current research strategies and advancements.

Since the inception of the density functional theory (DFT) by Hohenberg and Kohn in 1964, it rapidly became an indispensable theoretical tool across various disciplines, such as chemistry, biology, and materials science, among others. This theory has ushered in a new era of computational research, paving the way for substantial advancements in fundamental understanding. Today, DFT is routinely employed for a diverse range of applications, such as probing new material properties and providing a profound understanding of the mechanisms underlying physical, chemical, and biological processes. Even after decades of active utilization, the improvement of DFT principles has never been slowed down, meaning that more accurate theoretical results are continuously generated with time. This work highlights the latest achievements acquired by DFT in the specific research field, namely the theoretical investigations of doped TiO2systems, which have not been comprehensively reviewed and summarized yet. Successful progress in this niche is currently hard to imagine without the support by DFT. It can accurately reveal new TiO2properties after introducing the desired dopant and help to find the optimal system design for a specific application prior to proceeding to more time-consuming and expensive experimental research. Hence, by evaluating a selection of the most recent research studies, we aim to highlight the pertinent aspects of DFT as they relate to the study of doped TiO2systems. We also aim to shed light on the strengths and weaknesses of DFT and present the primary strategies employed thus far to predict the properties of various doped TiO2systems reliably.

Novel rod-like [Cu(phen)2(OAc)]·PF6 complex for high-performance visible-light-driven photocatalytic degradation of hazardous organic dyes: DFT approach, Hirshfeld and fingerprint plot analysis.

A novel octahedral distorted coordination complex was formed from a copper transition metal with a bidentate ligand (1,10-Phenanthroline) and characterized by Ultraviolet-visible spectroscopy, Ultraviolet-visible diffuse reflectance spectroscopy, Fourier-transform infrared spectroscopy, Brunauer-Emmett-Teller, Field emission scanning electron microscopy, and Single-crystal X-ray diffraction. The Hirshfeld surface and fingerprint plot analyses were conducted to determine the interactions between atoms in the Cu(II) complex. DFT calculations showed that the central copper ion and its coordinated atoms have an octahedral geometry. The Molecular electrostatic potential (MEP) map indicated that the copper (II) complex is an electrophilic compound that can interact with negatively charged macromolecules. The HOMO-LUMO analysis demonstrated the π nature charge transfer from acetate to phenanthroline. The band gap of [Cu(phen)2(OAc)]·PF6 photocatalyst was estimated to be 2.88 eV, confirming that this complex is suitable for environmental remediation. The photocatalytic degradation of erythrosine, malachite green, methylene blue, and Eriochrome Black T as model organic pollutants using the prepared complex was investigated under visible light. The [Cu(phen)2(OAc)]·PF6 photocatalyst exhibited degradation 94.7, 90.1, 82.7, and 74.3 % of malachite green, methylene blue, erythrosine, and Eriochrome Black T, respectively, under visible illumination within 70 min. The results from the Langmuir-Hinshelwood kinetic analysis demonstrated that the Cu(II) complex has a higher efficiency for the degradation of cationic pollutants than the anionic ones. This was attributed to surface charge attraction between photocatalyst and cationic dyes promoting removal efficiency. The reusability test indicated that the photocatalyst could be utilized in seven consecutive photocatalytic degradation cycles with an insignificant decrease in efficiency.

Optical band gap enhancements of chemically synthesized α-Ni(OH)2 nanoparticles by a novel technique: Precipitator molarity variation.

Nickel hydroxide nanoparticles (NHNPs) are extremely important semiconducting materials for applications in energy storage and energy harvesting devices. This study uses a novel variation in molarity of the sodium hydroxide (NaOH) precipitator solution to enhance the direct optical band gap in the NHNPs chemically synthesized by using nickel nitrate hexahydrate (Ni(NO3 )2 ·6H2 O) as the precursor. The simple, energy benign chemical precipitation route involved the usage of 1 M (Ni(NO3 )2 ·6H2 O) solutions as the precursor and 0.4 M, 0.6 M, and 0.8 M NaOH solutions as the precipitator solutions. The simple variation in precipitator molarity induces an increase in pH from about 6.9 to 7.5 of the reactant solution. As the molarity of the precursor solution does not change, the change in pH of the reactant solution is equivalent to the change in the pH of the precipitator solution. The NHNPs characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), dynamic light scattering (DLS), Fourier-transform infrared (FTIR) and ultraviolet-visible (UV-vis) techniques confirm a reduction of the nanocrystallite size from about 6.8 to 4.5 nm with a concomitant enhancement in the direct optical band gap energy from about 2.64 to 2.74 eV. The possible mechanisms that could be operative behind obtaining microstructurally tuned (MT)-NHNPs and band gap engineering (BGE) of the MT-NHNPs are discussed from both theoretical and physical process perspectives. Further, the implications of these novel results for possible future applications are briefly touched upon. The reported results might be useful to assess the material as an active electrode to improve the performance of batteries.

Design of a Narrow Band Filter Based on a Photonic Crystal Cavity for CO2 Sensing Application.

This paper investigates the use of a miniaturized filter based on a triangular lattice of holes in a photonic crystal (PhC) slab. The plane wave expansion method (PWE) and finite-difference time-domain (FDTD) techniques were utilized to analyze the dispersion and transmission spectrum, as well as the quality factor and free spectral range (FSR) of the filter. A 3D simulation has demonstrated that for the designed filter, an FSR of more than 550 nm and a quality factor of 873 can be attained by adiabatically coupling light from a slab waveguide into a PhC waveguide. This work designs a filter structure that is implemented into the waveguide and is suitable for a fully integrated sensor. The small size of the device provides a strong potential for the realization of large arrays of independent filters on a single chip. The fully integrated character of this filter has further advantages such as reducing power loss in coupling light from sources to filters and also from filters to waveguides. The ease of fabrication is another benefit of completely integrating the filter.

Adducing Knowledge Capabilities of Instrumental Techniques Through the Exploration of Heterostructures' Modification Methods.

The ongoing evolution of technology has facilitated the global research community to rapidly escalate the constant development of novel advancements in science. At the forefront of such achievements in the field of photocatalysis is the utilisation, and in oftentimes, the adaptation of modern instrumentation to understand photo-physical properties of complex heterostructures. For example, coupling in-situ X-ray Raman scattering spectroscopy for real-time degradation of catalytic materials.

Ultrawide Bandgap and Outstanding Second-Harmonic Generation Response by a Fluorine-Enrichment Strategy at a Transition-Metal Oxyfluoride Nonlinear Optical Material.

The development of nonlinear optical (NLO) materials has been hindered by competing microstructure requirements: the need to simultaneously engineer a large hyperpolarizability (a large second-harmonic generation (SHG)) and a wide HOMO-LUMO gap (a wide band gap). Herein, a non-centrosymmetric transition-metal (TM) oxyfluoride K5 (NbOF4 )(NbF7 )2 (KNOF) with an extremely high F/O ratio is constructed in high yield. KNOF exhibits an extremely wide band gap (5.88 eV) and a strong powder SHG response (4.0×KH2 PO4 )-both being the largest values for TM-centered oxyfluorides-as well as a birefringence sufficient for applications. The dominant roles of the partially fluorinated [NbO2 F4 ] and totally fluorinated [NbF7 ] groups in achieving the enlarged band gap in KNOF have been clarified by first-principles calculations. Our results suggest that maximizing the fluorine content of oxyfluorides may unlock the promise of short-wavelength-transparent materials with exceptional NLO performance.

On-Surface Synthesis of a Nitrogen-Doped Graphene Nanoribbon with Multiple Substitutional Sites.

Doped graphene nanoribbons (GNRs) with heteroatoms are a principal strategy to fine-tune the electronic structures of GNRs for future device applications. Here, we successfully synthesized the N=9 nitrogen-doped armchair GNR on the Au(111) surface. Due to the flexibility of precursor molecules, three different covalent bonds (C-C, C-N, N-N) are formed in the GNR backbone. Scanning tunneling spectroscopy analysis together with band structure calculations reveals that the band gap of the N-9-AGNRs (C-C) will be enlarged compared to pristine 9-AGNRs, and the C-N bond and N-N bond at the isolated site of N-9-AGNR (C-C) will introduce new defect states near the Fermi level. DFT calculations reveal that the electronic structure of N-9-AGNR (C-C) shows semiconductor character, while N-9-AGNR (C-N) and N-9-AGNR (N-N) display metallic character. Our results provide a promising route for creating more complex molecular heterostructures with tunable band gaps, which may be useful for future molecular electronics and memory device applications.

La3 Ga3 Ge2 S3 O10 : An Ultraviolet Nonlinear Optical Oxysulfide Designed by Anion-Directed Band Gap Engineering.

Chalcogenide-containing compounds have been widely studied as infrared nonlinear optical (NLO) materials. However, they have never been applied in the ultraviolet (UV) region owing to the high energy levels of chalcogen anions, leading to band gap narrowing. We report the synthesis of a new UV NLO oxysulfide La3 Ga3 Ge2 S3 O10 with an exceptionally wide band gap of 4.70 eV due to from the unique anion-ordered frameworks comprising 1D 1 ∞ [(Ga3/5 Ge2/5 )3 S3 O3 ] triangular tubes and 0D (Ga3/5 Ge2/5 )2 O7 dimers of corner-sharing (Ga/Ge)S2 O2 and (Ga/Ge)O4 tetrahedra, respectively. Second harmonic generation (SHG) measurements revealed that La3 Ga3 Ge2 S3 O10 was phase matchable with twice the SHG response of KH2 PO4 . The results of theoretical calculations suggest that the strong SHG response is mainly attributable to the S-3p and O-2p orbitals in the occupied states. The anion-directed band-gap engineering may give insights into the application of NLO oxychalcogenides in the UV regions.

Band-Gap and Charge Transfer Engineering in Red Phosphorus-Based Composites for Enhanced Visible-Light-Driven H2 Evolution.

It is known that the low lifetime of photogenerated carriers is the main drawback of elemental photocatalysts. Therefore, a facile and versatile one-step strategy to simultaneously achieve the oxygen covalent functionalization of amorphous red phosphorus (RP) and in situ modification of CdCO3 is reported. This strategy endows RP with enhanced charge carrier separation ability and photocatalytic activity by coupling band-gap engineering and heterojunction construction. The as-prepared nCdCO3 /SO-RP (n=0.1, 0.25, 0.5, 1.0) composites exhibited excellent photocatalytic H2 evolution activity (up to 516.3 µmol g-1 h) from visible-light-driven water splitting (λ>400 nm), which is about 17.6 times higher than that of pristine RP. By experimental and theoretical investigations, the roles of surface oxygen covalent functionalization, that is, prolonging the lifetime of photogenerated carriers and inducing the negative shift of the conduction band potential, were studied in detail. Moreover, the charge transfer mechanism of these composites has also been proposed. In addition, these composites are stable and can be reused at least for three times without significant activity loss. This work may provide a good example of how to promote the activity of elemental photocatalysts by decorating their atomic structure.

Isotope Effect in Bilayer WSe2.

Isotopes of an element have the same electron number but differ in neutron number and atomic mass. However, due to the thickness-dependent properties in MX2 (M = Mo, W; X = S, Se, Te) transition metal dichalcogenides (TMDs), the isotopic effect in atomically thin TMDs still remains unclear especially for phonon-assisted indirect excitonic transitions. Here, we report the first observation of the isotope effect on the electronic and vibrational properties of a TMD material, using naturally abundant NAWNASe2 and isotopically pure 186W80Se2 bilayer single crystals over a temperature range of 4.4-300 K. We demonstrate a higher optical band gap energy in 186W80Se2 than in NAWNASe2 (3.9 ± 0.7 meV from 4.41 to 300 K), which is surprising as isotopes are neutral impurities. Phonon energies decrease in the isotopically pure crystal due to the atomic mass dependence of harmonic oscillations, with correspondingly longer E2g and A21g phonon lifetimes than in the naturally abundant sample. The change in electronic band gap renormalization energy is postulated as being the dominant mechanism responsible for the change in optical emission spectra.

Lead-Free Halide Double Perovskite Cs2 AgBiBr6 with Decreased Band Gap.

Environmentally friendly halide double perovskites with improved stability are regarded as a promising alternative to lead halide perovskites. The benchmark double perovskite, Cs2 AgBiBr6 , shows attractive optical and electronic features, making it promising for high-efficiency optoelectronic devices. However, the large band gap limits its further applications, especially for photovoltaics. Herein, we develop a novel crystal-engineering strategy to significantly decrease the band gap by approximately 0.26 eV, reaching the smallest reported band gap of 1.72 eV for Cs2 AgBiBr6 under ambient conditions. The band-gap narrowing is confirmed by both absorption and photoluminescence measurements. Our first-principles calculations indicate that enhanced Ag-Bi disorder has a large impact on the band structure and decreases the band gap, providing a possible explanation of the observed band-gap narrowing effect. This work provides new insights for achieving lead-free double perovskites with suitable band gaps for optoelectronic applications.

Giant Mechano-Optoelectronic Effect in an Atomically Thin Semiconductor.

Transition metal dichalcogenides (TMDs) are particularly sensitive to mechanical strain because they are capable of experiencing high atomic displacements without nucleating defects to release excess energy. Being promising for photonic applications, it has been shown that as certain phases of layered TMDs MX2 (M = Mo or W; X = S, Se, or Te) are scaled to a thickness of one monolayer, the photoluminescence response is dramatically enhanced due to the emergence of a direct electronic band gap compared with their multilayer or bulk counterparts, which typically exhibit indirect band gaps. Recently, mechanical strain has also been predicted to enable direct excitonic recombination in these materials, in which large changes in the photoluminescence response will occur during an indirect-to-direct band gap transition brought on by elastic tensile strain. Here, we demonstrate an enhancement of 2 orders of magnitude in the photoluminescence emission intensity in uniaxially strained single crystalline WSe2 bilayers. Through a theoretical model that includes experimentally relevant system conditions, we determine this amplification to arise from a significant increase in direct excitonic recombination. Adding confidence to the high levels of elastic strain achieved in this report, we observe strain-independent, mode-dependent Grüneisen parameters over the entire range of tensile strain (1-3.59%), which were obtained as 1.149 ± 0.027, 0.307 ± 0.061, and 0.357 ± 0.103 for the E2g, A1g, and A21g optical phonon modes, respectively. These results can inform the predictive strain-engineered design of other atomically thin indirect semiconductors, in which a decrease in out-of-plane bonding strength may lead to an increase in the strength of strain-coupled optoelectronic effects.

The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures.

The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer, the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric heteromultilayered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. An analytic treatment is used to provide further insight into how the interlayer gap influences different excitonic transitions. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances and shed light on the effect of temperature annealing.

Band-Gap Engineering of Graphene Heterostructures by Substitutional Doping with B3 N3.

We investigated the energetics and electronic structure of B3 N3 -doped graphene employing density functional theory calculations with the generalized gradient approximation. Our calculations reveal that all of the B3 N3 -doped graphene structures are semiconducting, irrespective of the periodicity of the B3 N3 embedded into the graphene network. This is in contrast to graphene nanomeshes, which are either semiconductors or metals depending on the mesh arrangement. In B3 N3 -doped graphene, the effective masses for both electrons and holes are small. The band gap in the B3 N3 -doped graphene networks and the total energy of the B3 N3 -doped graphene are inversely proportional to the B3 N3 spacing. Furthermore, both properties depend on whether or not the graphene region possesses a Clar structure. In particular, the sheets with a Clar structure exhibit a wider band gap and a slightly lower total energy than those without a Clar structure.

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides.

van der Waals two-dimensional (2D) semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic band gap. For realistic applications, the ideal is to modify the band gap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable band gap in the family of bulk 2H transition metal dichalcogenides (TMDs) by in situ surface doping of Rb atoms. A series of angle-resolved photoemission spectra unexceptionally shows that the band gap of TMDs at the zone corners is modulated in the range of 0.8-2.0 eV, which covers a wide spectral range from visible to near-infrared, with a tendency from indirect to direct band gap. A key clue to understanding the mechanism of this band-gap engineering is provided by the spectroscopic signature of symmetry breaking and resultant spin-splitting, which can be explained by the formation of 2D electric dipole layers within the surface bilayer of TMDs. Our results establish the surface Stark effect as a universal mechanism of band-gap engineering on the basis of the strong 2D nature of van der Waals semiconductors.

Chemical Engineering of Photoactivity in Heterometallic Titanium-Organic Frameworks by Metal Doping.

We report a new family of titanium-organic frameworks that enlarges the limited number of crystalline, porous materials available for this metal. They are chemically robust and can be prepared as single crystals at multi-gram scale from multiple precursors. Their heterometallic structure enables engineering of their photoactivity by metal doping rather than by linker functionalization. Compared to other methodologies based on the post-synthetic metallation of MOFs, our approach is well-fitted for controlling the positioning of dopants at an atomic level to gain more precise control over the band-gap and electronic properties of the porous solid. Changes in the band-gap are also rationalized with computational modelling and experimentally confirmed by photocatalytic H2 production.

Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications.

The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.

Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.

III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap.

Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.

We demonstrate the selective area growth of GaN-(Al,Ga)N core-shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. Raman measurements relate this shift to compressive strain within the GaN core. On the nanoscale, cathodoluminescence spectroscopy and scanning transmission electron microscopy prove the homogeneity of strain-related luminescence along the nanowire axis and the absence of significant fluctuations within the shell, respectively. A comparison of the experimental findings with numerical simulations indicates the absence of a significant defect-related strain relaxation for all investigated structures, with a maximum compressive strain of -3.4% for a shell thickness of 50 nm. The accurate control of the nanowire dimensions, namely, core diameter, shell thickness, and nanowire period, via selective area growth allows a specific manipulation of the resulting strain within individual nanowires on the same sample. This, in turn, enables a spatially resolved adjustment of the GaN band gap with an energy range of 240 meV in a one-step growth process.