Revealing the Unusual Rigid Boron Chain Substructure in Hard and Superconductive Tantalum Monoboride.

Poor electrical conductivity severely limits the diverse applications of high hardness materials in situations where electrical conductivities are highly desired. A "covalent metal" TaB with metallic electrical conductivity and high hardness has been fabricated by a high pressure and high temperature method. The bulk modulus, 302.0(4.9) GPa, and Vickers hardness, 21.3 GPa, approaches and even exceeds that of traditional insulating hard materials. Meanwhile, temperature-dependent electrical resistivity measurements show that TaB possesses metallic conductivity that rivals some widely-used conductors, and it will transform into a superconductor at Tc =7.8 K. Contrary to common understanding, the hardness of TaB is higher than that of TaB2 , which indicates that low boron concentration borides could be mechanically better than the higher boron concentration counterparts. Compression behavior and first principles calculations denote that the high hardness is associated with the ultra-rigid covalent boron chain substructure. The hardness of TaB with different topologies of boron substructure shows that besides incorporating higher boron content, manipulating light element backbone configurations is also critical for higher hardness amongst transition metal borides with identical boron content.

Diboryldiborenes: π-Conjugated B4 Chains Isoelectronic to the Butadiene Dication.

B(sp2 )-B(sp3 ) diborane species based on bis(catecholato)diboron and N-heterocyclic carbenes (NHCs) underwent catechol/bromide exchange selectively at the sp3 -hybridized boron atom. The reduction of the resulting 1,1-dibromodiborane adducts led to reductive coupling and isolation of doubly NHC-stabilized 1,2-diboryldiborenes. These compounds are the first examples of molecules exhibiting π-electron delocalization over an all-boron chain.