Meandering conduction channels and the tunable nature of quantized charge transport.

The discovery of the quantum Hall effect has established the foundation of the field of topological condensed matter physics. An amazingly accurate quantization of the Hall conductance, now enshrined in quantum metrology, is stable against any reasonable perturbation due to its topological protection. Conversely, the latter implies a form of censorship by concealing any local information from the observer. The spatial distribution of the current in a quantum Hall system is such a piece of information, which, thanks to spectacular recent advances, has now become accessible to experimental probes. It is an old question whether the original and intuitively compelling theoretical picture of the current, flowing in a narrow channel along the sample edge, is the physically correct one. Motivated by recent experiments locally imaging quantized current in a Chern insulator (Bi, Sb)[Formula: see text]Te[Formula: see text] heterostructure [Rosen et al., Phys. Rev. Lett. 129, 246602 (2022); Ferguson et al., Nat. Mater. 22, 1100-1105 (2023)], we theoretically demonstrate the possibility of a broad "edge state" generically meandering away from the sample boundary deep into the bulk. Further, we show that by varying experimental parameters one can continuously tune between the regimes with narrow edge states and meandering channels, all the way to the charge transport occurring primarily within the bulk. This accounts for various features observed in, and differing between, experiments. Overall, our findings underscore the robustness of topological condensed matter physics, but also unveil the phenomenological richness, hidden until recently by the topological censorship-most of which, we believe, remains to be discovered.

Engineering Gapless Edge States from Antiferromagnetic Chern Homobilayer.

We put forward that stacked Chern insulators with opposite chiralities offer a strategy to achieve gapless helical edge states in two dimensions. We employ the square lattice as an example and elucidate that the gapless chiral and helical edge states emerge in the monolayer and antiferromagnetically stacked bilayer, characterized by Chern number C=-1 and spin Chern number CS=-1, respectively. Particularly, for a topological phase transition to the normal insulator in the stacked bilayer, a band gap closing and reopening procedure takes place accompanied by helical edge states disappearing, where the Chern insulating phase in the monolayer vanishes at the same time. Moreover, EuO is revealed as a suitable candidate for material realization. This work is not only valuable to the research of the quantum anomalous Hall effect but also offers a favorable platform to realize magnetic topologically insulating materials for spintronics applications.

Robust Edge States of Quasi-1D Material Ta2NiSe7 and Applications in Saturable Absorbers.

The helical edge states (ESs) protected by underlying Z2 topology in two-dimensional topological insulators (TIs) arouse upsurges in saturable absorptions thanks to the strong photon-electron coupling in ESs. However, limited TIs demonstrate clear signatures of topological ESs at liquid nitrogen temperatures, hindering the applications of such exotic quantum states. Here, we demonstrate the existence of one-dimensional (1D) ESs at the step edge of the quasi-1D material Ta2NiSe7 at 78 K by scanning tunneling microscopy. Such ESs are rather robust against the irregularity of the edges, suggesting a possible topological origin. The exfoliated Ta2NiSe7 flakes were used as saturable absorbers (SAs) in an Er-doped fiber laser, hosting a mode-locked pulse with a modulation depth of up to 52.6% and a short pulse duration of 225 fs, far outstripping existing TI-based SAs. This work demonstrates the existence of robust 1D ESs and the superior SA performance of Ta2NiSe7.

Photonic Molecule Approach to Multiorbital Topology.

The concepts of topology provide a powerful tool to tailor the propagation and localization of the waves. While electrons have only two available spin states, engineered degeneracies of photonic modes provide novel opportunities resembling spin degrees of freedom in condensed matter. Here, we tailor such degeneracies for the array of femtosecond laser written waveguides in the optical range exploiting the idea of photonic molecules: clusters of strongly coupled waveguides. In our experiments, we observe unconventional topological modes protected by the Z3 invariant arising due to the interplay of interorbital coupling and geometric dimerization mechanism. We track multiple topological transitions in the system with the change in the lattice spacings and excitation wavelength. This strategy opens an avenue for designing novel types of photonic topological phases and states.

Coherent Control of Topological States in an Integrated Waveguide Lattice.

Topological photonics holds the promise for enhanced robustness of light localization and propagation enabled by the global symmetries of the system. While traditional designs of topological structures rely on lattice symmetries, there is an alternative strategy based on accidentally degenerate modes of the individual meta-atoms. Using this concept, we experimentally realize topological edge state in an array of silicon nanostructured waveguides, each hosting a pair of degenerate modes at telecom wavelengths. Exploiting the hybrid nature of the topological mode, we implement its coherent control by adjusting the phase between the degenerate modes and demonstrating selective excitation of bulk or edge states. The resulting field distribution is imaged via third harmonic generation showing the localization of topological modes as a function of the relative phase of the excitations. Our results highlight the impact of engineered accidental degeneracies on the formation of topological phases, extending the opportunities stemming from topological nanophotonic systems.

Interaction Effects in a 1D Flat Band at a Topological Crystalline Step Edge.

Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the topological crystalline insulator. Using scanning tunneling microscopy and spectroscopy, we investigate the behavior of such edge channels in Pb1-xSnxSe under doping. Once the energy position of the step edge is brought close to the Fermi level, we observe the opening of a correlation gap. The experimental results are rationalized in terms of interaction effects which are enhanced since the electronic density is collapsed to a one-dimensional channel. This constitutes a unique system to study how topology and many-body electronic effects intertwine, which we model theoretically through a Hartree-Fock analysis.

Current-Phase Relation of a WTe2 Josephson Junction.

When a topological insulator is incorporated into a Josephson junction, the system is predicted to reveal the fractional Josephson effect with a 4π-periodic current-phase relation. Here, we report the measurement of a 4π-periodic switching current through an asymmetric SQUID, formed by the higher-order topological insulator WTe2. Contrary to the established opinion, we show that a high asymmetry in critical current and negligible loop inductance are not sufficient by themselves to reliably measure the current-phase relation. Instead, we find that our measurement is heavily influenced by additional inductances originating from the self-formed PdTex inside the junction. We therefore develop a method to numerically recover the current-phase relation of the system and find the 1.5 µm long junction to be best described in the short ballistic limit. Our results highlight the complexity of subtle inductance effects that can give rise to misleading topological signatures in transport measurements.

Uncovering Topological Edge States in Twisted Bilayer Graphene.

Twisted bilayer graphene (t-BLG) has recently been introduced as a rich physical platform displaying flat electronic bands, strongly correlated states, and unconventional superconductivity. Studies have hinted at an unusual Z2 topology of the moiré Dirac bands of t-BLG. However, direct experimental evidence of this moiré band topology and associated edge states is still lacking. Herein, using superconducting quantum interferometry, we reconstructed the spatial supercurrent distribution in t-BLG Josephson junctions and revealed the presence of edge states located in the superlattice band gaps. The absence of edge conduction in high resistance regions just outside the superlattice band gap confirms that the edge transport originates from the filling of electronic states located inside the band gap and further allows us to exclude several other edge conduction mechanisms. These results confirm the unusual moiré band topology of twisted bilayer graphene and will stimulate further research to explore its consequences.

Ultrafast Internal Exciton Dissociation through Edge States in MoS2 Nanosheets with Diffusion Blocking.

Edge states of two-dimensional transition-metal dichalcogenides (TMDCs) are crucial to quantum circuits and optoelectronics. However, their dynamics are pivotal but remain unclear due to the edge states being obscured by their bulk counterparts. Herein, we study the state-resolved transient absorption spectra of ball-milling-produced MoS2 nanosheets with 10 nm lateral size with highly exposed free edges. Electron energy loss spectroscopy and first-principles calculations confirm that the edge states are located in the range from 1.23 to 1.78 eV. Upon above bandgap excitations, excitons populate and diffuse toward the boundary, where the potential gradient blocks excitons and the edge states are formed through interband transitions within 400 fs. With below bandgap excitations, edge states are slowed down to 1.1 ps due to the weakened valence orbital coupling. These results shed light on the fundamental exciton dissociation processes on the boundary of functionalized TMDCs, enabling the ground work for applications in optoelectronics and light-harvesting.

Quantum Spin Hall Edge States and Interlayer Coupling in Twisted Bilayer WTe2.

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe2. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe2. At the tBL edges, we observe the characteristic spectroscopic signatures of the QSH edge states. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first-principles calculations, we quantify the interactions in tBL WTe2 and its topological edge states as a function of interlayer distance and conclude that it is possible to engineer the topology of WTe2 bilayers via the twist angle as well as interlayer interactions.

Surface-Anchored Acetylcholine Regulates Band-Edge States and Suppresses Ion Migration in a 21%-Efficient Quadruple-Cation Perovskite Solar Cell.

Although incorporating multiple halogen (bromine) anions and alkali (rubidium) cations can improve the open-circuit voltage (Voc ) of perovskite solar cells (PSCs), severe voltage loss and poor stability have remained pivotal limitations to their further commercialization. In this study, acetylcholine (ACh+ ) is anchored to the surface of a quadruple-cation perovskite to provide additional electron states near the valence band maximum of the perovskite surface, thereby enhancing the band alignment and minimizing the Voc loss significantly. Moreover, the quaternary ammonium and carbonyl units of ACh+ passivate the antisite and vacancy defects of the organic/inorganic hybrid perovskite. Because of strong interactions between ACh+ and the perovskite, the formation of lead clusters and the migration of halogen anions in the perovskite film are suppressed. As a result, the device prepared with ACh+ post-treatment delivers a power conversion efficiency (PCE) (21.56%) and a value of Voc (1.21 V) that are much higher than those of the pristine device, along with a twofold decrease in the hysteresis index. After storage for 720 h in humid air, the device subjected to ACh+ treatment maintained 70% of its initial PCE. Thus, post-treatment with ACh+ appears to be a useful strategy for preparing efficient and stable PSCs.

Layer Edge States Stabilized by Internal Electric Fields in Two-Dimensional Hybrid Perovskites.

Two-dimensional (2D) organic-inorganic hybrid perovskites have been intensively explored in recent years due to their tunable band gaps and exciton binding energies and increased stability with respect to three-dimensional (3D) hybrid perovskites. Experimental observations suggest the existence of localized edge states in 2D hybrid perovskites which facilitate extremely efficient electron-hole dissociation and long carrier lifetimes, while multiple origins for their formation have been proposed. Using first-principles calculations, we demonstrate that layer edge states are stabilized by internal electric fields created by polarized molecular alignment of organic cations in 2D hybrid perovskites when they are two layers or thicker. Our study gives a simple physical explanation of the edge state formation, and facilitating the design and manipulation of layer edge states for optoelectronic applications.

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4.

MnBi2Te4, a van der Waals magnet, is an emergent platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer number dependent topological states. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish one-to-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi2Te4 devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk band gap, corresponding to the concurrent topological phase transition in both even- and odd-layer-number devices. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet.

Tomonaga-Luttinger Liquid in the Topological Edge Channel of Multilayer FeSe.

A two-dimensional topological insulator exhibits helical edge states topologically protected against single-particle backscattering. Such protection breaks down, however, when electron-electron interactions are significant or when edge reconstruction occurs, leading to a suppressed density of states (DOS) at the Fermi level that follows universal scaling with temperature and energy, characteristic of Tomonaga-Luttinger liquid (TLL). Here, we grow multilayer FeSe on SrTiO3 by molecular beam epitaxy and observe robust edge states at both the {100}Se and the {110}Se steps using scanning tunneling microscopy/spectroscopy. We determine the DOS follows a power law, resulting in the Luttinger parameter K of 0.26 ± 0.02 and 0.43 ± 0.07 for the {100}Se and {110}Se edges, respectively. The smaller K for the {100}Se edge also indicates strong correlations, attributed to ferromagnetic ordering likely present due to checkerboard antiferromagnetic fluctuations in FeSe. These results demonstrate TLL in FeSe helical edge channels, providing an exciting model system for novel topological excitations arising from superconductivity and interacting helical edge states.

One-Dimensional Edge Transport in Few-Layer WTe2.

WTe2 is a layered transitional-metal dichalcogenide (TMD) with a number of intriguing topological properties. Recently, WTe2 has been predicted to be a higher-order topological insulator (HOTI) with topologically protected hinge states along the edges. The gapless nature of WTe2 complicates the observation of one-dimensional (1D) topological states in transport due to their small contribution relative to the bulk. Here, we study the behavior of the Josephson effect in magnetic field to distinguish edge from bulk transport. The Josephson effect in few-layer WTe2 reveals 1D states residing on the edges and steps. Moreover, our data demonstrates a combination of Josephson transport properties observed solely in another HOTI-bismuth, including Josephson transport over micrometer distances, extreme robustness in a magnetic field, and nonsinusoidal current-phase relation (CPR). Our observations strongly suggest the topological origin of the 1D states and that few-layer WTe2 is a HOTI.

Compact SQUID Realized in a Double-Layer Graphene Heterostructure.

2D systems that host 1D helical states are advantageous from the perspective of scalable topological quantum computation when coupled to a superconductor. Graphene is particularly promising for its high electronic quality, its versatility in van der Waals heterostructures, and its electron- and hole-like degenerate 0th Landau level. Here we study a compact double-layer graphene SQUID (superconducting quantum interference device), where the superconducting loop is reduced to the superconducting contacts connecting two parallel graphene Josephson junctions. Despite the small size of the SQUID, it is fully tunable by the independent gate control of the chemical potentials in both layers. Furthermore, both Josephson junctions show a skewed current-phase relationship, indicating the presence of superconducting modes with high transparency. In the quantum Hall regime, we measure a well-defined conductance plateau of 2e2/h indicative of counter-propagating edge channels in the two layers.

Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

Atom-Dependent Edge-Enhanced Second-Harmonic Generation on MoS2 Monolayers.

Edge morphology and lattice orientation of single-crystal molybdenum disulfide (MoS2) monolayers, a transition metal dichalcogenide (TMD), possessing a triangular shape with different edges grown by chemical vapor deposition are characterized by atomic force microscopy and transmission electron microscopy. Multiphoton laser scanning microscopy is utilized to study one-dimensional atomic edges of MoS2 monolayers with localized midgap electronic states, which result in greatly enhanced optical second-harmonic generation (SHG). Microscopic S-zigzag edge and S-Mo Klein edge (bare Mo atoms protruding from a S-zigzag edge) terminations and the edge-atom dependent resonance energies can therefore be deduced based on SHG images. Theoretical calculations based on density functional theory clearly explain the lower energy of the S-zigzag edge states compared to the corresponding S-Mo Klein edge states. Characterization of the atomic-scale variation of edge-enhanced SHG is a step forward in this full-optical and high-yield technique of atomic-layer TMDs.

Energy-Resolved Photoconductivity Mapping in a Monolayer-Bilayer WSe2 Lateral Heterostructure.

Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band-structure engineering. Because electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and heterojunction of these two-dimensional (2D) systems may exhibit novel physical properties, which can be fully revealed only by spatially resolved probes. Here, we report the spatial mapping of photoconductivity in a monolayer-bilayer WSe2 lateral heterostructure under multiple excitation lasers. As the photon energy increases, the light-induced conductivity detected by microwave impedance microscopy first appears along the heterointerface and bilayer edge, then along the monolayer edge, inside the bilayer area, and finally in the interior of the monolayer region. The sequential emergence of mobile carriers in different sections of the sample is consistent with the theoretical calculation of local energy gaps. Quantitative analysis of the microscopy and transport data also reveals the linear dependence of photoconductivity on the laser intensity and the influence of interlayer coupling on carrier recombination. Combining theoretical modeling, atomic-scale imaging, mesoscale impedance microscopy, and device-level characterization, our work suggests an exciting perspective for controlling the intrinsic band gap variation in 2D heterostructures down to a regime of a few nanometers.

Recipe for Dirac Phonon States with a Quantized Valley Berry Phase in Two-Dimensional Hexagonal Lattices.

The topological quantum states in two-dimensional (2D) materials are fascinating subjects of research, which usually highlight electron-related systems. In this work, we present a recipe that leads to Dirac phonon states with a quantized valley Berry phase in 2D hexagonal lattices by first-principles calculations. We show that candidates possessing the 3-fold rotational symmetry at the corners of the hexagonal Brillouin zone host valley Dirac phonons, which are guaranteed to remain intact with respect to perturbations. We identify that such special topological features populated by Dirac phonons can be realized in various 2D materials. In particular, the monolayer CrI3, an attractive 2D magnetic semiconductor with exotic applications in spintronics, is an ideal platform to investigate nontrivial phonons in experiments. We further confirm that the phonon Berry phase is quantized to ± π at two inequivalent valleys. The phonon edge states terminated at the projection of phonon Dirac cones are clearly visible. This work demonstrates that 2D hexagonal lattices with attractive valley Dirac phonons will extend the knowledge of valley physics, providing wide applications of topological phonons.