RESUMO
The performance of blue quantum dot light-emitting diodes (QLEDs) is limited by unbalanced charge injection, resulting from insufficient holes caused by low mobility or significant energy barriers. Here, we introduce an angular-shaped heteroarene based on cyclopentane[b]thiopyran (C8-SS) to modify the hole transport layer poly-N-vinylcarbazole (PVK), in blue QLEDs. C8-SS exhibits high hole mobility and conductivity due to the π···π and S···π interactions. Introducing C8-SS to PVK significantly enhanced hole mobility, increasing it by 2 orders of magnitude from 2.44 × 10-6 to 1.73 × 10-4 cm2 V-1 s-1. Benefiting from high mobility and conductivity, PVK:C8-SS-based QLEDs exhibit a low turn-on voltage (Von) of 3.2 V. More importantly, the optimized QLEDs achieve a high peak power efficiency (PE) of 7.13 lm/W, which is 2.65 times that of the control QLEDs. The as-proposed interface engineering provides a novel and effective strategy for achieving high-performance blue QLEDs in low-energy consumption lighting applications.
RESUMO
Quantum-dot light-emitting diodes (QLEDs), a kind of promising optoelectronic device, demonstrate potential superiority in next-generation display technology. Thermal cross-linked hole transport materials (HTMs) have been employed in solution-processed QLEDs due to their excellent thermal stability and solvent resistance, whereas the unbalanced charge injection and high cross-linking temperature of cross-linked HTMs can inhibit the efficiency of QLEDs and limit their application. Herein, a low-temperature cross-linked HTM of 4,4'-bis(3-(((4-vinylbenzyl)oxy)methyl)-9H-carbazol-9-yl)-1,1'-biphenyl (DV-CBP) with a flexible styrene side chain is introduced, which reduces the cross-linking temperature to 150 °C and enhances the hole mobility up to 1.01 × 10-3 cm2 V-1 s-1. More importantly, the maximum external quantum efficiency of 21.35% is successfully obtained on the basis of the DV-CBP as a cross-linked hole transport layer (HTL) for blue QLEDs. The low-temperature cross-linked high-mobility HTL using flexible side chains could be an excellent alternative for future HTL development.
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Perovskite solar cell (PSC) is a promising photovoltaic technology that achieves over 26% power conversion efficiency (PCE). However, the high materials costs, complicated fabrication process, as well as poor long-term stability, are stumbling blocks for the commercialization of the PSCs in normal structures. The hole transport layer (HTL)-free carbon-based PSCs (C-PSCs) are expected to overcome these challenges. However, C-PSCs have suffered from relatively low PCE due to severe energy loss at the perovskite/carbon interface. Herein, the study proposes to boost the hole extraction capability of carbon electrode by incorporating functional manganese (II III) oxide (Mn3O4). It is found that the work function (WF) of the carbon electrode can be finely tuned with different amounts of Mn3O4 addition, thus the interfacial charge transfer efficiency can be maximized. Besides, the mechanical properties of carbon electrode can also be strengthened. Finally, a PCE of 19.03% is achieved. Moreover, the device retains 90% of its initial PCE after 2000 h of storage. This study offers a feasible strategy for fabricating efficient paintable HTL-free C-PSCs.
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BiVO4-based photoanode is one of the most promising photoanodes for photoelectrocatalytic water splitting. However, the serious problem of interface charge recombination limits its further development. Here, a Mo:BiVO4/NiOx/CPF-TCzB/NiCoBi photoanode is constructed with double hole transport layer and an energy level gradient to achieve an effective photo-generated holes extraction and accumulation at the surface electrocatalyst. The conjugated polycarbazole framework CPF-TCzB is used as hole transport layer to eliminate the charge recombination center between Mo:BiVO4 and NiCoBi electrocatalyst and realize the extraction and storage of photo-generated hole; NiOx nanoparticles are further inserted between Mo:BiVO4 and CPF-TCzB to form a gradient energy level, eliminating the energy level barrier and optimizing band alignment. As a result, Mo:BiVO4/NiOx/CPF-TCzB/NiCoBi achieves a much higher photocurrent densities of 3.14 mA cm-2 than that of Mo:BiVO4 (0.42 mA cm-2) at 0.6 V versus RHE. This work provides an specific way to adjust the band structure of BiVO4-based photoanodes and realize efficient hole extraction and storage for PEC water splitting.
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Cu2ZnSnS4 (CZTS) is strong candidate for hole transport in perovskite light emitting diodes (PeLEDs) due to their cost-effectiveness, deep highest occupied molecular orbital (HOMO), and high hole mobility. However, its inherent polymetallic ions usually deteriorate the quality of the perovskite emission layer (EML) affecting device performance. In this study, a bidirectional anchoring strategy is proposed by adding 15-crown-5 ether (15C5) into CZTS hole transport layer (HTL) to suppress the reaction between HTL and EML. The 15C5 molecule interacts with Cu+, Zn2+ and Sn2+ cations forming host-guest complexes to impede their migration, which is elucidated by density functional theory calculations. Additionally, 15C5 can neutralize lead (Pb) defects by the abundant oxygen (O) and high electronegative cavities to reduce the nonradiative recombination of FAPbBr3 film. This bidirectional anchoring strategy effectively improves hole charge transport efficiency and suppresses nonradiative recombination at the HTL/EML interface. As a result, the optimized PeLEDs present a 3.5 times peak external quantum efficiency (EQE) from 3.12% to 11.08% and the maximum luminance (Lmax) increased from 24495 to 50584 cd m-2. These findings offer innovative insights into addressing the metal ion migration issue commonly observed in inorganic HTLs.
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Highly efficient perovskite optoelectronics (POEs) have been limited by nonradiative recombination. We report a strategy to inhibit the nonradiative recombination of 2D triphenylamine polymers in the hole transport layer (HTL) via introducing electron-donating groups to enhance the conjugation effect and electron cloud density. The conjugated systems with electron-donating groups present smaller energy level oscillation compared to the ones with electron-absorbing groups, as confirmed by nonadiabatic molecular dynamics (NAMD) calculation. Further study reveals that the introduction of low-frequency phonons in the electron-donating group systems shortens the nonadiabatic coupling and inhibits the nonradiative recombination. Such electron-donating groups can decrease the valence band maximum of 2D polymers and promote hole transport. Our report provides a new design strategy to suppress nonradiative recombination in HTL for application in efficient POEs.
RESUMO
Properties of the underlying hole transport layer (HTL) play a crucial role in determining the optoelectronic performance of perovskite light-emitting devices (PeLEDs). However, endowing the current HTL system with a deep highest occupied molecular orbital (HOMO) level concurrent with high hole mobility is still a big challenge, in particular being an open constraint toward high-efficiency blue PeLEDs. In this regard, employing the poly(9-vinylcarbazole) as a model, we perform efficient incorporation of the atomic-precision metal nanoclusters (NCs), [Ag6PL6, PL = (S)-4-phenylthiazolidine-2-thione], to achieve significant tailoring in both HOMO energy level and hole mobility. As a result, the as-modified PeLEDs exhibit an external quantum efficiency (EQE) of 14.29% at 488 nm. The presented study exemplifies the success of metal NC involved HTL engineering and offers a simple yet effective additive strategy to settle the blue PeLED HTL dilemma, which paves the way for the fabrication of highly efficient blue PeLEDs.
RESUMO
Copper(I) thiocyanate (CuSCN) is considered an efficient HTL of low cost and with high stability in perovskite solar cells (PSCs). However, the diethyl sulfide solvent used for CuSCN preparation is known to cause damage to the underlying perovskite layer in n-i-p PSCs. Antisolvent treatment of CuSCN during spin-coating can effectively minimize interfacial interactions. However, the effects of antisolvent treatment are not sufficiently understood. In this study, the effects of five different antisolvents were investigated. Scanning electron microscopy and X-ray diffraction analyses showed that the antisolvent treatment improved the crystallinity of the CuSCN layer on the perovskite layer and reduced damage to the perovskite layer. However, X-ray and ultraviolet photoelectron spectroscopy analyses showed that antisolvent treatment did not affect the chemical bonds or electronic structures of CuSCN. As a result, the power conversion efficiency of the PSCs was increased from 14.72% for untreated CuSCN to 15.86% for ethyl-acetate-treated CuSCN.
RESUMO
The doped organic hole transport layer (HTL) is crucial for achieving high-efficiency perovskite solar cells (PSCs). However, the traditional doping strategy undergoes a time-consuming and environment-dependent oxidation process, which hinders the technology upgrades and commercialization of PSCs. Here, we reported a new strategy by introducing a cascade reaction in traditional doped Spiro-OMeTAD, which can simultaneously achieve rapid oxidation and overcome the erosion of perovskite by 4-tert-butylpyridine (tBP) in organic HTL. The ideal dopant iodobenzene diacetate was utilized as the initiator that can react with Spiro to generate Spiroâ + radicals quickly and efficiently without the participation of ambient air, with the byproduct of iodobenzene (DB). Then, the DB can coordinate with tBP through a halogen bond to form a tBP-DB complex, minimizing the sustained erosion from tBP to perovskite. Based on the above cascade reaction, the resulting Spiro-based PSCs have a champion PCE of 25.76 % (certificated of 25.38 %). This new oxidation process of HTL is less environment-dependent and produces PSCs with higher reproducibility. Moreover, the PTAA-based PSCs obtain a PCE of 23.76 %, demonstrating the excellent applicability of this doping strategy on organic HTL.
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Formamidinium lead triiodide serves as the optimal light-absorbing layer in single-junction perovskite solar cells. However, achieving operational stability of high-efficiency n-i-p type devices at elevated temperatures remains challenging. In this work, we implemented effective surface modifications on microcrystalline perovskite films. This involved the nucleophilic addition of formamidinium cations and coordination of residual PbI2 with triphenylmethane triisocyanate as well as subsequent polymerization. The in situ growth of a cross-linking network chemically anchored on the perovskite film in this approach effectively reduced trap densities, favorably altered surface work function, suppressing interface charge recombination and thus enhancing cell efficiency. Coupled with a high-melting-point air-doping promoter, we fabricated n-i-p type perovskite solar cells surpassing 25 % efficiency, demonstrating excellent operational stability at 65 °C.
RESUMO
We have demonstrated a unique reductive coupling of 4-iodophenyl isocyanide, facilitated by a perimidine-based N-heterocyclic germylene (NHGe), which yields a bis-spirogerma compound featuring simultaneous CâC and CâN bond formation. This reaction, which leads to the oxidation of germanium from +2 to +4, represents a significant departure from previously documented isocyanide-germylene interactions. The product exhibits extensive conjugation across its bicyclic C4Ge2N2 framework, conferring distinct photophysical properties, including prominent orange luminescence in both solution and solid states. The photophysical properties are supported by the TD-DFT calculations confirming an nâπ* transition. The potential application of this compound in optoelectronic devices, particularly as a hole transport layer in PbS quantum dot solar cells, is also explored, with promising preliminary results.
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The severely insufficient operational lifetime of perovskite light-emitting diodes (LEDs) is incompatible with the rapidly increasing external quantum efficiency, even as it approaches the theoretical limit, thereby significantly impeding the commercialization of perovskite LEDs. In addition, Joule heating induces ion migration and surface defects, degrades the photoluminescence quantum yield and other optoelectronic properties of perovskite films, and induces the crystallization of charge transport layers with low glass transition temperatures, resulting in LED degradation under continuous operation. Here, a novel thermally crosslinked hole transport material, poly(FCA60 -co-BFCA20 -co-VFCA20 ) (poly-FBV), with temperature-dependent hole mobility is designed, which is advantageous for balancing the charge injection of the LEDs and limiting the generation of Joule heating. The optimised CsPbI3 perovskite nanocrystal LEDs with poly-FBV realise approximately a 2-fold external quantum efficiency increase over the LED with commercial hole transport layer poly(4-butyl-phenyl-diphenyl-amine) (poly-TPD), owing to the balanced carrier injection and suppressed exciton quenching. Moreover, because of the Joule heating control provided by the novel crosslinked hole transport material, the LED utilising crosslinked poly-FBV has a 150-fold longer operating lifetime (490 min) than that utilizing poly-TPD (3.3 min). The study opens a new avenue for the use of PNC LEDs in commercial semiconductor optoelectronic devices.
RESUMO
Bioinspired two-dimensional (2D) nanofluidic systems for photo-induced ion transport have attracted great attention, as they open a new pathway to enabling light-to-ionic energy conversion. However, there is still a great challenge in achieving a satisfactory performance. It is noticed that organic solar cells (OSCs, light-harvesting device based on photovoltaic effect) commonly require hole/electron transport layer materials (TLMs), PEDOT:PSS (PE) and PDINN (PD), respectively, to promote the energy conversion. Inspired by such a strategy, an artificial proton pump by coupling a nanofluidic system with TLMs is proposed, in which the PE- and PD-functionalized tungsten disulfide (WS2 ) multilayers construct a heterogeneous membrane, realizing an excellent output power of ≈1.13 nW. The proton transport is fine-regulated due to the TLMs-engineered band structure of WS2 . Clearly, the incorporating TLMs of OSCs into 2D nanofluidic systems offers a feasible and promising approach for band edge engineering and promoting the light-to-ionic energy conversion.
RESUMO
We report on the formation of bendable and edge-on poly[3-(4-carboxybutyl)thiophene-2,5-diyl] (P3CT) polymers thin layer used as a hole modification layer (HML) in the inverted perovskite solar cell. The aggregations of 2D layer-like P3CT polymers in dimethylformamide (DMF) solution can be formed via aromaticπ-πstacking interactions and/or hydrogen-bonding interactions with the different concentration from 0.01 to 0.02 wt%, which highly influences the photovoltaic performance of the inverted perovskite solar cells. The atomic-force microscopic images and water droplet contact angle images show that the P3CT polymers modify the surface properties of the transparent conductive substrate and thereby dominating the formation of perovskite crystalline thin films, which play important roles in the highly efficient and stable perovskite solar cells. It is noted that theVOC(JSC) of the encapsulated solar cells values are maintained to be higher than 1.115 V (22 mA cm-2) after 104 d when an optimizedπ-πstacked and hydrogen-bonded P3CT polymer is used as the HML. On the other hand, the solar cell showed a high long-term stability by maintaining 85% of the initial power conversion efficiency in the ambient air for 103 d.
RESUMO
The use of dopant-free hole transport layers (HTLs) is critical in stabilizing n-i-p perovskite solar cells (pero-SCs). However, these HTL materials are often processed with toxic solvents, which is not ideal for industrial production. Upon substituting them with green solvents, a trade-off emerges between maintaining the high crystallinity of the HTL materials and ensuring high solubility in the new solvents. In this paper, we designed a novel, linear, organic small molecule, BDT-C8-3O, by introducing an asymmetric polar oligo(ethylene glycol) side chain. This method not only overcomes the solubility limitations in green solvents but also enables stacking the conjugated main chains in two patterns, which further enhances crystallinity and hole mobility. As a result, the n-i-p pero-SCs based on chlorobenzene- or green (natural compound) solvent 3-methylcyclohexanone-processed BDT-C8-3O HTL that without any dopant delivered world-recorded power conversion efficiencies of 24.11 % (certified of 23.82 %) and 23.53 %, respectively. The devices also demonstrated remarkable operational and high-temperature stabilities, maintaining over 84 % and 79.5 % of their initial efficiency for 2000â h, respectively. Encouragingly, dopant-free BDT-C8-3O HTL exhibits significant advantages in large-area fabrication, achieving state-of-the-art PCEs exceeding 20 % for 5×5â cm2 modules (active area: 15.64â cm2 ), even when processed using green solvents.
RESUMO
Lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) has been identified as the most used and effective p-dopant for hole transport layer (HTL) in perovskite solar cells (PSCs). However, the migration and agglomeration of Li-TFSI in HTL negatively impact PSCs performance and stability. Herein, we report an effective strategy for adding a liquid crystal organic small molecule (LQ) into Li-TFSI doped (2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'- spirobifluorene (Spiro-OMeTAD) HTL. It was found that the introduction of LQ into Spiro-OMeTAD HTL can efficiently enhance the charge carrier extraction and transportation in device, which can strongly retard the charge carrier recombination in device. Consequently, the PSCs efficiency is significantly enhanced to 24.42 % (Spiro-OMeTAD+LQ) from 21.03 % (Spiro-OMeTAD). The chemical coordination between LQ and Li-TFSI can strongly confine Li+ ions migration and agglomeration of Li-TFSI, thus, achieving the enhanced device stability. Only a 9 % efficiency degradation is observed for un-encapsulated device prepared with Spiro-OMeTAD and LQ after 1700â h under air environment, while the efficiency drops by 30 % for the reference device. This work provides an effective strategy for improving the efficiency and stability of PSCs, and gives some important insights for understanding intrinsic hot carriers dynamics for perovskite-based optoelectronic devices.
RESUMO
Hole transport layer (HTL) plays a critical role in perovskite solar cells (PSCs). We focus on the improvement of PSCs performance with MoS2nanosheets as the anode buffer layer in the inverted photovoltaic structure. PSC with single MoS2buffer layer shows poor performance in power conversion efficiency (PCE) and the long-term stability. By combination of MoS2and Poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA) as double-layer HTL, the PCE is improved to 18.47%, while the control device with PTAA alone shows a PCE of 14.48%. The same phenomenon is also found in 2D PSCs. For double-layer HTL devices, the PCE reaches 13.19%, and the corresponding PCE of the control group using PTAA alone is 10.13%. This significant improvement is attributed to the reduced interface resistance and improved hole extraction ability as shown by the electric impedance spectroscopy and fluorescence spectroscopy. In addition, the improved device exhibits better stability because the PCE still maintains 66% of the initial value after 500 h of storage, which is higher than the 47% of the remaining PCE from device based on single PTAA or MoS2. Our results demonstrate the potential of polymer/inorganic nanomaterial as a double-layer buffer material for PSCs.
RESUMO
The synergistic effect of high-quality NiOxhole transport layers (HTLs) deposited by ion beam sputtering on ITO substrates and the Ti3C2TxMXene doping of CH3NH3PbI3(MAPI) perovskite layers is investigated in order to improve the power conversion efficiency (PCE) of p-i-n perovskite solar cells (PSCs). The 18 nm thick NiOxlayers are pinhole-free and exhibit large-scale homogeneous surface morphology as revealed by the atomic force microscopy (AFM). The grazing-incidence x-ray diffraction showed a 0.75% expansion of the face-centered cubic lattice, suggesting an excess of oxygen as is typical for non-stoichiometric NiOx. The HTLs were used to fabricate the PSCs with MXene-doped MAPI layers. A PSC with undoped MAPI layer served as a control. The size of MAPI polycrystalline grains increased from 430 ± 80 nm to 620 ± 190 nm on the doping, as revealed by AFM. The 0.15 wt% MXene doping showed a 14.3% enhancement in PCE as compared to the PSC with undoped MAPI. The energy-resolved electrochemical impedance spectroscopy revealed one order of magnitude higher density of defect states in the band gap of MXene-doped MAPI layer, which eliminated beneficial effect of reduced total area of larger MAPI grain boundaries, decreasing short-circuit current. The PCE improvement is attributed to a decrease of the work function from -5.26 eV to -5.32 eV on the MXene doping, which increased open-circuit voltage and fill factor.
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Hole transporting layer-free organic solar cells with simplified device structures are desirable for their mass production. In this work, a p-dopant of organic molybdenum peroxide (OMP) to dope nonfullerene active layers to produce p-doped surface on the active layer is adopted. The OMP can effectively dope widely used polymer donors of nonfullerene organic solar cells, i.e., PTB7-Th, PBDB-T, and even PBDB-T-2F that has a very deep highest occupied molecular orbital (HOMO) energy level of -5.47 eV. The doping mechanism lies in the strong oxidizing property of peroxide groups of the OMP leading to superior doping properties. In the end, hole transporting layer-free nonfullerene organic solar cells with the device structure of ITO/PEI-Zn/PBDB-T-2F:IT-4F/Ag are fabricated. The cells show a power conversion efficiency of 12.2% and good thermal stability.
RESUMO
Perovskite solar cells (PSCs) offer advantages over widely deployed silicon solar cells in terms of ease of fabrication; however, the device is still under rigorous materials optimization for cell performance, stability, and cost. In this work, we explore a version of a PSC by replacing the polymeric hole transport layer (HTL) such as Spiro-OMeTAD, P3HT, and PEDOT: PSS with a more air-stable metal oxide, viz., nitrogen-doped titanium dioxide (TiO2:N). Numerical simulations on formamidinium (FA)-based PSCs in the FTO/TiO2/FAPbI3/Ag configuration have been carried out to depict the behaviour of the HTL as well as the effect of absorber layer thickness (∆t) on photovoltaic parameters. The results show that the cell output increases when the HTL bandgap increases from 2.5 to 3.0 eV. By optimizing the absorber layer thickness and the gradient in defect density (Nt), the device structure considered here can deliver a maximum power conversion efficiency of ~21.38% for a lower HTL bandgap (~2.5 eV) and ~26.99% for a higher HTL bandgap of ~3.0 eV. The results are validated by reproducing the performance of PSCs employing commonly used polymeric HTLs, viz. Spiro-OMeTAD, P3HT, and PEDOT: PSS as well as high power conversion efficiency in the highly crystalline perovskite layer. Therefore, the present study provides high-performing, cost-effective PSCs using TiO2:N.