Mode Conversion Trimming in Asymmetric Directional Couplers Enabled by Silicon Ion Implantation.

An on-chip asymmetric directional coupler (DC) can convert fundamental modes to higher-order modes and is one of the core components of mode-division multiplexing (MDM) technology. In this study, we propose that waveguides of the asymmetric DC can be trimmed by silicon ion implantation to tune the effective refractive index and facilitate mode conversion into higher-order modes. Through this method of tuning, transmission changes of up to 18 dB have been realized with one ion implantation step. In addition, adjusting the position of the ion implantation on the waveguide can provide a further degree of control over the transmission into the resulting mode. The results of this work present a promising new route for the development of high-efficiency, low-loss mode converters for integrated photonic platforms, and aim to facilitate the application of MDM technology in emerging photonic neuromorphic computing.

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide.

The deterministic generation of individual color centers with defined orientations or types in solid-state systems is paramount for advancements in quantum technologies. Silicon vacancies in 4H-silicon carbide (4H-SiC) can be formed in V1 and V2 types. However, silicon vacancies are typically generated randomly between V1 and V2 types with similar probabilities. Here, we show that the preferred V2 centers can be selectively generated by focused ion beam (FIB) implantation on the m-plane in 4H-SiC. When implantation is on the m-plane (a-plane), the generation probability ratio between V1 and V2 centers increase exponentially (remains constant) with decreasing FIB fluences. With a fluence of 10 ions/spot, the probability to generate V2 centers is seven times higher than V1 centers. Our results represent a critical step toward the deterministic creation of specific defect types.

Deflecting Dendrites by Introducing Compressive Stress in Li7La3Zr2O12 Using Ion Implantation.

Lithium dendrites belong to the key challenges of solid-state battery research. They are unavoidable due to the imperfect nature of surfaces containing defects of a critical size that can be filled by lithium until fracturing the solid electrolyte. The penetration of Li metal occurs along the propagating crack until a short circuit takes place. It is hypothesized that ion implantation can be used to introduce stress states into Li6.4La3Zr1.4Ta0.6O12 which enables an effective deflection and arrest of dendrites. The compositional and microstructural changes associated with the implantation of Ag-ions are studied via atom probe tomography, electron microscopy, and nano X-ray diffraction indicating that Ag-ions can be implanted up to 1 µm deep and amorphization takes place down to 650-700 nm, in good agreement with kinetic Monte Carlo simulations. Based on diffraction results pronounced stress states up to -700 MPa are generated in the near-surface region. Such a stress zone and the associated microstructural alterations exhibit the ability to not only deflect mechanically introduced cracks but also dendrites, as demonstrated by nano-indentation and galvanostatic cycling experiments with subsequent electron microscopy observations. These results demonstrate ion implantation as a viable technique to design "dendrite-free" solid-state electrolytes for high-power and energy-dense solid-state batteries.

Site-Specific Emulation of Neuronal Synaptic Behavior in Au Nanoparticle-Decorated Self-Organized TiOx Surface.

Neuromorphic computing is a potential approach for imitating massive parallel processing capabilities of a bio-synapse. To date, memristors have emerged as the most appropriate device for designing artificial synapses for this purpose due to their excellent analog switching capacities with high endurance and retention. However, to build an operational neuromorphic platform capable of processing high-density information, memristive synapses with nanoscale footprint are important, albeit with device size scaled down, retaining analog plasticity and low power requirement often become a challenge. This paper demonstrates site-selective self-assembly of Au nanoparticles on a patterned TiOx layer formed as a result of ion-induced self-organization, resulting in site-specific resistive switching and emulation of bio-synaptic behavior (e.g., potentiation, depression, spike rate-dependent and spike timing-dependent plasticity, paired pulse facilitation, and post tetanic potentiation) at nanoscale. The use of local probe-based methods enables nanoscale probing on the anisotropic films. With the help of various microscopic and spectroscopic analytical tools, the observed results are attributed to defect migration and self-assembly of implanted Au atoms on self-organized TiOx surfaces. By leveraging the site-selective evolution of gold-nanostructures, the functionalized TiOx surface holds significant potential in a multitude of fields for developing cutting-edge neuromorphic computing platforms and Au-based biosensors with high-density integration.

Green to deep-red emissive carbon dot formation by C+ion implantation on nitrogen beam created self-masked nano-template.

We report the formation of green to red emissive arrays of carbon dot on silicon-nitride nano-templates by successive implantation of nitrogen and carbon broad ion beams. The patterned nano-templates are formed by 14 keV N2+ion-bombardment at grazing incident (70°) on Si. Subsequently, 5 keV C+ions are implanted at the selective sites of the pyramidal nano-template by taking advantage of the self-masking effect. The nano-pyramidal pattern and the implanted carbon dots at the specific sites are confirmed by atomic force microscopy and cross sectional transmission electron microscopy measurements. The developed carbon dots (CDs) are mostly amorphous and consists of SiC and graphitic nitrogen (CN). G-band and D-band carbons are identified by Raman spectroscopy, while the presence of SiC and CN are detected by XPS measurements. A change of band-gap is observed for C-implanted templates by the UV-vis spectroscopy. Excitation wavelength-dependent photoemission from the dots is found in the green to red region. Maximum intense PL is observed in the green-orange region for excitation wavelength of 425 nm and a redshift of PL with decreasing intensity is observed with the increase of excitation wavelength. The observed photoluminescence is described in terms of the combined effects of quantum confinement, graphitic nitrogen and defect induced additional states formation in the carbon dots. The potential applications of CDs are also addressed.

Nano-cutting mechanism of ion implantation-modified SiC: reducing subsurface damage expansion and abrasive wear.

This study utilized ion implantation to modify the material properties of silicon carbide (SiC) to mitigate subsurface damage during SiC machining. The paper analyzed the mechanism of hydrogen ion implantation on the machining performance of SiC at the atomic scale. A molecular dynamics model of nanoscale cutting of an ion-implanted SiC workpiece using a non-rigid regular tetrakaidecahedral diamond abrasive grain was established. The study investigated the effects of ion implantation on crystal structure phase transformation, dislocation nucleation, and defect structure evolution. Results showed ion implantation modification decreased the extension depth of amorphous structures in the subsurface layer, thereby enhancing the surface and subsurface integrity of the SiC workpiece. Additionally, dislocation extension length and volume within the lattice structure were lower in the ion-implanted workpiece compared to non-implanted ones. Phase transformation, compressive pressure, and cutting stress of the lattice in the shear region per unit volume were lower in the ion-implanted workpiece than the non-implanted one. Taking the diamond abrasive grain as the research subject, the mechanism of grain wear under ion implantation was explored. Grain expansion, compression, and atomic volumetric strain wear rate were higher in the non-implanted workpiece versus implanted ones. Under shear extrusion of the SiC workpiece, dangling bonds of atoms in the diamond grain were unstable, resulting in graphitization of the diamond structure at elevated temperatures. This study established a solid theoretical and practical foundation for realizing non-destructive machining at the atomic scale, encompassing both theoretical principles and practical applications.

Plasmon-enhanced multi-photon excited photoluminescence of Au, Ag, and Pt nanoclusters.

In this work, we have studied the multi-photon excited photoluminescence from metal nanoclusters (NCs) of Au, Ag and Pt embedded in Al2O3matrix by ion implantation. The thermal annealing process allows to obtain a system composed of larger plasmonic metal nanoparticles (NPs) surrounded by photoluminescent ultra-small metal NCs. By exciting at 1064 nm, visible emission, ranging from 450 to 800 nm, was detected. The second and fourth-order nature of the multiphoton process was verified in a power-dependent study measured for each sample below the damage threshold. Experiments show that Au and Ag NCs exhibit a four-fold enhanced multiphoton excited photoluminescence with respect to that observed for Pt NCs, which can be explained as a result of a plasmon-mediated near-field process that is of less intensity for Pt NPs. These findings provide new opportunities to combine plasmonic nanoparticles and photoluminescent nanoclusters inside a robust inorganic matrix to improve their optical properties. Plasmon-enhanced multiphoton excited photoluminescence from metal nanoclusters may find potential application as ultrasmall fluorophores in multiphoton sensing, and in the development of solar cells with highly efficient energy conversion modules.

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process.

Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000.

Biocompatible gelatin/carbon dot nanocomposite based urea sensor and the effect of nitrogen ion implantation.

In this study, we have fabricated a novel platform for sensing of urea using gelatin/carbon dots nanocomposite system. The sensor electrode was created by depositing the nanocomposite gel onto thin glass plates coated with indium tin oxide (ITO) using the drop casting technique. The behavior of these electrodes was investigated against a number of bioanalytes in the concentration range of 2-20 mM by cyclic voltammetry. The system was observed to be highly selective for urea with a sensitivity of 1.65 µA/mM/cm in the experimental linear range of 2-20 mM. Furthermore, the gelatin/CD-ITO electrode were also subjected to 50 KeV N2+ ion beam irradiation with varying fluence in the range of 1012 to 1016 ions/cm2. Sensing profile of the irradiated samples for urea suggested enhancement in sensitivity to 2 µA/mM cm2, when the ion fluence was 5 × 1015 ions/cm2. This enhancement after irradiation suggests a clear dependence of detection on the fluence of the ion beam. The observed excellent sensitivity of radiation processed nanocomposite material can be used as an enzyme-free platform for urea detection. Additionally, the CDs showed fluorescence quenching on treatment with mere 50 µM urea suggesting the high sensitivity of the platform.

Gold-carbon dot (Au@Cd) nanoconjugates based electrochemical sensing of cholesterol and effect of nitrogen ion implantation on sensitivity.

Serum cholesterol dysregulation is associated with prognosis and diagnosis of many diseases and effective biosensor will improvise their management. A novel electrochemical biosensor was fabricated based on gelatin-Au@CD nanoconjugate films for cholesterol detection. Initially, the surface of indium titanium oxide (ITO) coated glass was modified by drop casting of gelatin-Au@CD nanoconjugates to prepare the electrodes. Electrochemical studies for detection of bioanalytes(such as urea (U), ascorbic acid (AA), oxalic acid (OA), gallic acid (GA), cholesterol (Chox), dextrose (D), l-cysteine (Cys) and citric acid (CA)) were performed using cyclic voltammetry. The presence of nanoconjugates provided an appropriate environment for enhanced electrochemical response for cholesterol. These electrodes exhibited a linear response towards the presence of cholesterol in the linear concentration range of 2-20 mM with a correlation coefficient of 0.95, and the superior sensitivity of 1.36 µA/mM/cm2. Additionally, enhanced sensitivity (2.99 µA/mM/cm2) of nitrogen ion irradiated films up to a fluence of 1016 ions/cm2 was noticed because of morphological changes in the electrode surface brought about by irradiation. Approximately 54% enhancement was found when the ion fluence was 1016 ions/cm2. The designed nanoconjugate electrode showed excellent response towards cholesterol sensing and eliminates the requirement of any enzymes making the overall process simpler, cost-effective and allows for room temperature storage.

Incorporating zinc ion into titanium surface promotes osteogenesis and osteointegration in implantation early phase.

The objective of this study is to further investigate the feasibility of Zinc-Titanium implant as a potential implantable material in oral application in aspects of osteoblast biocompatibility, osteogenesis and osseointegration ability. First, we used plasma immersion ion implantation and deposition (PIIID) technology to introduce Zinc ion into pure Titanium surface, then we used X-ray photoelectron spectroscopy to analyze the chemical composition of modified surface layer; next, we used in vitro studies including immunological fluorescence assay and western blotting to determine responses between MG-63 osteoblast-like cell and implant. In vivo studies adopted pig model to check the feasibility of Zn-Ti implant. Results showed that in vitro and in vivo were consistent, showing that Zn ion was successfully introduced into Ti surface by PIIID technique. The chemical and physical change on modified plant resulted in the more active expressions of mRNA and protein of Type I collagen in MG-63 cells compared with non-treated implant, and the better integration ability of bones with modified implant. We confirmed the Zn-Ti implant owns the ability in promoting osteogenesis and osteointegration in early phase of implantation and is a qualified candidate in dentistry. The overview of our study can be depicted as follows.

Gate-Tunable Resonance State and Screening Effects for Proton-Like Atomic Charge in Graphene.

The ability to create a robust and well-defined artificial atomic charge in graphene and understand its carrier-dependent electronic properties represents an important goal toward the development of graphene-based quantum devices. Herein, we devise a new pathway toward the atomically precise embodiment of point charges into a graphene lattice by posterior (N) ion implantation into a back-gated graphene device. The N dopant behaves as an in-plane proton-like charge manifested by formation of the characteristic resonance state in the conduction band. Scanning tunneling spectroscopy measurements at varied charge carrier densities reveal a giant energetic renormalization of the resonance state up to 220 meV with respect to the Dirac point, accompanied by the observation of gate-tunable long-range screening effects close to individual N dopants. Joint density functional theory and tight-binding calculations with modified perturbation potential corroborate experimental findings and highlight the short-range character of N-induced perturbation.

Sub-10 nm Precision Engineering of Solid-State Defects via Nanoscale Aperture Array Mask.

Engineering a strongly interacting uniform qubit cluster would be a major step toward realizing a scalable quantum system for quantum sensing and a node-based qubit register. For a solid-state system that uses a defect as a qubit, various methods to precisely position defects have been developed, yet the large-scale fabrication of qubits within the strong coupling regime at room temperature continues to be a challenge. In this work, we generate nitrogen vacancy (NV) color centers in diamond with sub-10 nm scale precision using a combination of nanoscale aperture arrays (NAAs) with a high aspect ratio of 10 and a secondary E-beam hole pattern used as an ion-blocking mask. We perform optical and spin measurements on a cluster of NV spins and statistically investigate the effect of the NAAs during an ion-implantation process. We discuss how this technique is effective for constructing a scalable system.

The Use of Electrochemical Methods to Determine the Effect of Nitrides of Alloying Elements on the Electrochemical Properties of Titanium ß-Alloys.

Titanium beta alloys represent the new generation of materials for the manufacturing of joint implants. Their Young's modulus is lower and thus closer to the bone tissue compared to commonly used alloys. The surface tribological properties of these materials should be improved by ion implantation. The influence of this surface treatment on corrosion behaviour is unknown. The surface of Ti-36Nb-6Ta, Ti-36Nb-4Zr, and Ti-39Nb titanium ß-alloys was modified using nitrogen ion implantation. X-ray photoelectron spectroscopy was used for surface analysis, which showed the presence of titanium, niobium, and tantalum nitrides in the treated samples and the elimination of less stable oxides. Electrochemical methods, electrochemical impedance spectra, polarisation resistance, and Mott-Schottky plot were measured in a physiological saline solution. The results of the measurements showed that ion implantation does not have a significant negative effect on the corrosion behaviour of the material. The best results of the alloys investigated were achieved by the Ti-36Nb-6Ta alloy. The combination of niobium and tantalum nitrides had a positive effect on the corrosion resistance of this alloy. After surface treatment, the polarization resistance of this alloy increased, 2.3 × 106 Ω·cm2, demonstrating higher corrosion resistance of the alloy. These results were also supported by the results of electrochemical impedance spectroscopy.

High Dielectric Transparent Film Tailored by Acceptor and Donor Codoping.

High dielectric constant materials are of particular current interests as indispensable components in transistors, capacitors, etc. In this context, there are emerging trends to exploit defect engineering in dielectric ceramics for enhancing the performance. However, demonstrations of similar high dielectric performance in integration-compatible crystalline films are rare. Herein, such a breakthrough via the functionalization of donor-acceptor dipoles by compositional tuning in GaCu codoped ZnO films is reported. The dielectric constant reaches ~200 at 1 kHz and the optical transmittance in visible light reaches ~80%. Importantly, by analyzing the impedance spectroscopy data, prominent relaxation mechanisms in correlation with the dipole properties, enabling consistent explanations of the dielectric constant as a function of frequency are discriminated. The atomistic nature of the dipoles is revealed by the systematic X-ray spectroscopy analysis. Spectacularly, similar trends for the dielectric properties are observed, while synthesizing samples by pulsed laser deposition and ion implantation, indicating the general character of the phenomena.

Xenon Ion Implantation Induced Surface Compressive Stress for Preventing Dendrite Penetration in Solid-State Electrolytes.

Solid-state electrolytes (SSEs) have been thrust into the limelight for the revival of energy-dense lithium metal batteries, but still face the challenge of failure caused by the dendrite penetration. Mounting evidence indicates that dendrite penetration is related to the mechanical failure in SSEs, which calls for mechanical engineering to tackle this problem. This work reports a proof of concept that ion implantation induced surface compressive stress enables resistance in the dendrite penetration. A deterministic sequential multiple ion energies implantation is used to generate compressive stress, with implanted Xe ions distributed in a range of 160-600 Å from the surface. The symmetric lithium cells show that pellets with an implantation dose of 1013 Xe cm-2 exhibit stable stripping/plating cycles and extended lifespan, while a lower dose of 1012 Xe cm-2 cannot create sufficient stress to prevent dendrite penetration, and an excessive dose of 1014 Xe cm-2 leads to structural destruction and a decrease in stress. This improved performance is attributed to the induced surface compressive stress balanced over crystal grains, which is confirmed by grazing incidence diffraction techniques. The author's efforts demonstrate the usefulness of surface compressive stress to suppress dendrite penetration, offering more insight into rational stress-strain engineering as opposed to empirical optimization.

Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoids.

Highly porous Germanium surfaces with uniformly distributed columnar nanovoid structures are fabricated over a large area (wafer scale) by large fluence Sn+irradiation through a thin silicon nitride layer. The latter represents a one-step highly reproducible approach with no material loss to strongly increase photon harvesting into a semiconductor active layer by exploiting the moth-eye antireflection effect. The ion implantation through the nitride cap layer allows fabricating porous nanostructures with high aspect ratio, which can be tailored by varying ion fluence. By comparing the reflectivity of nanoporous Ge films with a flat reference we demonstrate a strong and omnidirectional reduction in the optical reflectivity by a factor of 96% in the selected spectral regions around 960 nm and by a factor of 67.1% averaged over the broad spectral range from 350 to 1800 nm. Such highly anti-reflective nanostructured Ge films prepared over large-areas with a self-organized maskless approach have the potential to impact real world applications aiming at energy harvesting.

Tailored ion beam for precise colour centre creation.

We present an invariant-based quantum control scheme leading to a highly monochromatic ion beam from a Paul trap. Our protocol is implementable by supplying the segmented electrodes in the trap with voltages of the order of volts. This mitigates the impact of fluctuations in previous designs and leads to a low-dispersion beam of ions. Moreover, our proposal does not rely on sympathetically cooling ions, which bypasses the need of loading different species in the trap-namely, the propelled ion and, e.g. a [Formula: see text] to exert sympathetic cooling-significantly incrementing the repetition rate of the launching procedure. Our scheme is based on an invariant operator linear in position and momentum, which enables us to control the average extraction energy and the outgoing momentum spread. In addition, we propose a sequential operation to tailor the transversal properties of the beam before the ejection to minimize the impact spot and to increase the lateral resolution of the implantation. This article is part of the theme issue 'Shortcuts to adiabaticity: theoretical, experimental and interdisciplinary perspectives'.

Gold-implanted plasmonic quartz plate as a launch pad for laser-driven photoacoustic microfluidic pumps.

Enabled initially by the development of microelectromechanical systems, current microfluidic pumps still require advanced microfabrication techniques to create a variety of fluid-driving mechanisms. Here we report a generation of micropumps that involve no moving parts and microstructures. This micropump is based on a principle of photoacoustic laser streaming and is simply made of an Au-implanted plasmonic quartz plate. Under a pulsed laser excitation, any point on the plate can generate a directional long-lasting ultrasound wave which drives the fluid via acoustic streaming. Manipulating and programming laser beams can easily create a single pump, a moving pump, and multiple pumps. The underlying pumping mechanism of photoacoustic streaming is verified by high-speed imaging of the fluid motion after a single laser pulse. As many light-absorbing materials have been identified for efficient photoacoustic generation, photoacoustic micropumps can have diversity in their implementation. These laser-driven fabrication-free micropumps open up a generation of pumping technology and opportunities for easy integration and versatile microfluidic applications.

Quantification of Ion-Implanted Single-Atom Dopants in Monolayer MoS2 via HAADF STEM Using the TEMUL Toolkit.

In recent years, atomic resolution imaging of two-dimensional (2D) materials using scanning transmission electron microscopy (STEM) has become routine. Individual dopant atoms in 2D materials can be located and identified using their contrast in annular dark-field (ADF) STEM. However, in order to understand the effect of these dopant atoms on the host material, there is now the need to locate and quantify them on a larger scale. In this work, we analyze STEM images of MoS2 monolayers that have been ion-implanted with chromium at ultra-low energies. We use functions from the open-source TEMUL Toolkit to create and refine an atomic model of an experimental image based on the positions and intensities of the atomic columns in the image. We then use the refined model to determine the likely composition of each atomic site. Surface contamination stemming from the sample preparation of 2D materials can prevent accurate quantitative identification of individual atoms. We disregard atomic sites from regions of the image with hydrocarbon surface contamination to demonstrate that images acquired using contaminated samples can give significant atom statistics from their clean regions, and can be used to calculate the retention rate of the implanted ions within the host lattice. We find that some of the implanted chromium ions have been successfully integrated into the MoS2 lattice, with 4.1% of molybdenum atoms in the transition metal sublattice replaced with chromium.