Magnetic tunnel junction random number generators applied to dynamically tuned probability trees driven by spin orbit torque.

Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert equation solver the use of pMTJs driven by spin-orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probability tree. The tree operates by dynamically biasing sequences of pMTJ relaxation events, called 'coinflips', via an additional applied spin-transfer-torque current. Specifically, using a single, ideal pMTJ device we successfully draw integer samples on the interval [0, 255] from an exponential distribution based onp-value distribution analysis. In order to investigate device-to-device variations, the thermal stability of the pMTJs are varied based on manufactured device data. It is found that while repeatedly using a varied device inhibits ability to recover the probability distribution, the device variations average out when considering the entire set of devices as a 'bucket' to agnostically draw random numbers from. Further, it is noted that the device variations most significantly impact the highest level of the probability tree, with diminishing errors at lower levels. The devices are then used to draw both uniformly and exponentially distributed numbers for the Monte Carlo computation of a problem from particle transport, showing excellent data fit with the analytical solution. Finally, the devices are benchmarked against CMOS and memristor RNGs, showing faster bit generation and significantly lower energy use.

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions.

Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short- and long-term memory, nonlinear fast response, and relatively small footprint. Here we demonstrate experimentally how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions can emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two-terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic the neuron response in a dense neural network. The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks to sub-100 nm size elements.

Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current.

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicularly magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially nonuniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.

Engineering buffer layers to improve temperature resilience of magnetic tunnel junction sensors.

Improving the thermal resilience of magnetic tunnel junctions (MTJs) broadens their applicability as sensing devices and is necessary to ensure their operation under harsh environments. In this work, we are address the impact of temperature on the degradation of the magnetic reference in field sensor stacks based on MgO-MTJs. Our study starts by simple MnIr/CoFe bilayers to gather enough insights into the role of critical morphological and magnetic parameters and their impact in the temperature dependent behavior. The exchange bias coupling field (Hex), coercive field (Hc), and blocking temperature (Tb) distribution are tuned, combining tailored growth conditions of the antiferromagnet and different buffer layer materials and stackings. This is achieved by a unique combination of ion beam deposition and magnetron sputtering, without vaccum break. Then, the work then extends beyond bilayers into more complex state-of-the-art MgO MTJ stacks as those employed in commercial sensing applications. We systematically address their characteristic fields, such as the width of the antiferromagnetic coupling plateau ΔH, and study their dependence on temperature. Although, [Ta/CuN] buffers showed higher key performance indications (e.g.Hex) at room temperature in both bilayers and MTJs, [Ta/Ru] buffers showed an overall wider ΔHup to 200 °C, more suitable to push high temperature operations. This result highlights the importance of properly design a suitable buffer layer system and addressing the complete MTJ behavior as function of temperature, to deliver the best stacking design with highest resilience to high temperature environments.

Non-uniform superlattice magnetic tunnel junctions.

We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the linear, Gaussian, Lorentzian, and Pöschl-Teller width and height based profiles manifesting a sizable enhancement in the TMR (≈104- 106%) with a significant suppression in the switching bias (≈9 folds) owing to the physics of broad-band spin filtering. By exploring the negative differential resistance region in the current-voltage characteristics of the various Nu-SLTJs, we predict the Nu-SLTJs offer fastest spin transfer torque switching in the order of a few hundred picoseconds. We self-consistently employ the atomistic non-equilibrium Green's function formalism coupled with the Landau-Lifshitz-Gilbert-Slonczewski equation to evaluate the device performance of the various Nu-SLTJs. We also present the design of minimal three-barrier Nu-SLTJs having significant TMR (≈104%) and large spin current for the ease of device fabrication. We hope that the class of Nu-SLTJs proposed in this work may lay the bedrock to embark on the exhilarating voyage of exploring various non-uniform superlattices for the next generation of spintronic devices.

Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications.

Magnetic sensors are key elements in many industrial, security, military, and biomedical applications. Heusler alloys are promising materials for magnetic sensor applications due to their high spin polarization and tunable magnetic properties. The dynamic field range of magnetic sensors is strongly related to the perpendicular magnetic anisotropy (PMA). By tuning the PMA, it is possible to modify the sensing direction, sensitivity and even the accuracy of the magnetic sensors. Here, we report the tuning of PMA in a Co2MnGa Heusler alloy film via argon (Ar) ion irradiation. MgO/Co2MnGa/Pd films with an initial PMA were irradiated with 30 keV 40Ar+ ions with fluences (ions·cm-2) between 1 × 1013 and 1 × 1015 Ar·cm-2, which corresponds to displacement per atom values between 0.17 and 17, estimated from Monte-Carlo-based simulations. The magneto optical and magnetization results showed that the effective anisotropy energy (Keff) decreased from ~153 kJ·m-3 for the un-irradiated film to ~14 kJ·m-3 for the 1 × 1014 Ar·cm-2 irradiated film. The reduced Keff and PMA are attributed to ion-irradiation-induced interface intermixing that decreased the interfacial anisotropy. These results demonstrate that ion irradiation is a promising technique for shaping the PMA of Co2MnGa Heusler alloy for magnetic sensor applications.

Probing Magnetism in Exfoliated VI3 Layers with Magnetotransport.

We perform magnetotransport experiments on VI3 multilayers to investigate the relation between ferromagnetism in bulk and in exfoliated layers. The magnetoconductance measured on field-effect transistors and tunnel barriers shows that the Curie temperature of exfoliated multilayers is TC = 57 K, larger than in bulk (TC,bulk = 50 K). Below T ≈ 40 K, we observe an unusual evolution of the tunneling magnetoconductance, analogous to the phenomenology observed in bulk. Comparing the magnetoconductance measured for fields applied in- or out-of-plane corroborates the analogy, allows us to determine that the orientation of the easy-axis in multilayers is similar to that in bulk, and suggests that the in-plane component of the magnetization points in different directions in different layers. Besides establishing that the magnetic state of bulk and multilayers are similar, our experiments illustrate the complementarity of magnetotransport and magneto-optical measurements to probe magnetism in 2D materials.

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review.

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices' radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV-vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

Recent advances in two-dimensional ferromagnetism: strain-, doping-, structural- and electric field-engineering toward spintronic applications.

Since the first report on truly two-dimensional (2D) magnetic materials in 2017, a wide variety of merging 2D magnetic materials with unusual physical characteristics have been discovered and thus provide an effective platform for exploring the associated novel 2D spintronic devices, which have been made significant progress in both theoretical and experimental studies. Herein, we make a comprehensive review on the recent scientific endeavors and advances on the various engineering strategies on 2D ferromagnets, such as strain-, doping-, structural- and electric field-engineering, toward practical spintronic applications, including spin tunneling junctions, spin field-effect transistors and spin logic gate, etc. In the last, we discuss on current challenges and future opportunities in this field, which may provide useful guidelines for scientists who are exploring the fundamental physical properties and practical spintronic devices of low-dimensional magnets.

Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions.

Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random number generation is of interest in the field of cryptography. For such applications, a device's uncorrelated fluctuation time-scale can determine the effective system speed. It has been theoretically proposed that a magnetic tunnel junction designed to have only easy-plane anisotropy provides fluctuation rates determined by its easy-plane anisotropy field and can perform on a nanosecond or faster time-scale as measured by its magnetoresistance's autocorrelation in time. Here, we provide experimental evidence of nanosecond scale fluctuations in a circular-shaped easy-plane magnetic tunnel junction, consistent with finite-temperature coupled macrospin simulation results and prior theoretical expectations. We further assess the degree of stochasticity of such a signal.

A thermodynamic core using voltage-controlled spin-orbit-torque magnetic tunnel junctions.

We present a magnetic implementation of a thermodynamic computing fabric. Magnetic devices within computing cores harness thermodynamics through its voltage-controlled thermal stability; while the evolution of network states is guided by the spin-orbit-torque effect. We theoretically derive the dynamics of the cores and show that the computing fabric can successfully compute ground states of a Boltzmann Machine. Subsequently, we demonstrate the physical realization of these devices based on a CoFeB-MgO magnetic tunnel junction structure. The results of this work pave the path towards the realization of highly efficient, high-performance thermodynamic computing hardware. Finally, this paper will also give a perspective of computing beyond thermodynamic computing.

Development and Research of a Theoretical Model of the Magnetic Tunnel Junction.

Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic these layers. The strong effect of an inhomogeneous magnetic field on the magnetoresistive layers' interaction was demonstrated. The magnetostatic coupling coefficient is also calculated.

EE-ACML: Energy-Efficient Adiabatic CMOS/MTJ Logic for CPA-Resistant IoT Devices.

Internet of Things (IoT) devices have strict energy constraints as they often operate on a battery supply. The cryptographic operations within IoT devices consume substantial energy and are vulnerable to a class of hardware attacks known as side-channel attacks. To reduce the energy consumption and defend against side-channel attacks, we propose combining adiabatic logic and Magnetic Tunnel Junctions to form our novel Energy Efficient-Adiabatic CMOS/MTJ Logic (EE-ACML). EE-ACML is shown to be both low energy and secure when compared to existing CMOS/MTJ architectures. EE-ACML reduces dynamic energy consumption with adiabatic logic, while MTJs reduce the leakage power of a circuit. To show practical functionality and energy savings, we designed one round of PRESENT-80 with the proposed EE-ACML integrated with an adiabatic clock generator. The proposed EE-ACML-based PRESENT-80 showed energy savings of 67.24% at 25 MHz and 86.5% at 100 MHz when compared with a previously proposed CMOS/MTJ circuit. Furthermore, we performed a CPA attack on our proposed design, and the key was kept secret.

Voltage-Driven Magnetization Switching Controlled by Microwave Electric Field Pumping.

We study the dynamic switching properties of a nanomagnet under microwave electric field pumping. The periodic modulation of an anisotropy field induced by microwave electric field pumping efficiently excites the uniform magnetization oscillation, allowing for precise control of magnetization switching. Accurate shaping of the pumping voltage waveform also enables us to investigate the transient reaction of magnetization to the relative phase difference of the pumping signal. We demonstrate both experimentally and theoretically the existence of a dead angle in which the uniform oscillation of magnetization is inhibited even though the microwave frequency itself satisfies the conditions of parametric excitation. Our results provide an energy-efficient way of manipulating ultrafast magnetization dynamics in nanomagnetic devices.

Magnetic Domain Wall Based Synaptic and Activation Function Generator for Neuromorphic Accelerators.

Magnetic domain walls are information tokens in both logic and memory devices and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is ≤16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons.

Detection of Small Magnetic Fields Using Serial Magnetic Tunnel Junctions with Various Geometrical Characteristics.

Thanks to their high magnetoresistance and integration capability, magnetic tunnel junction-based magnetoresistive sensors are widely utilized to detect weak, low-frequency magnetic fields in a variety of applications. The low detectivity of MTJs is necessary to obtain a high signal-to-noise ratio when detecting small variations in magnetic fields. We fabricated serial MTJ-based sensors with various junction area and free-layer electrode aspect ratios. Our investigation showed that their sensitivity and noise power are affected by the MTJ geometry due to the variation in the magnetic shape anisotropy. Their MR curves demonstrated a decrease in sensitivity with an increase in the aspect ratio of the free-layer electrode, and their noise properties showed that MTJs with larger junction areas exhibit lower noise spectral density in the low-frequency region. All of the sensors were able detect a small AC magnetic field (Hrms = 0.3 Oe at 23 Hz). Among the MTJ sensors we examined, the sensor with a square-free layer and large junction area exhibited a high signal-to-noise ratio (4792 ± 646). These results suggest that MTJ geometrical characteristics play a critical role in enhancing the detectivity of MTJ-based sensors.

Coherent Resonant Tunneling through Double Metallic Quantum Well States.

Study of resonant tunneling through multimetallic quantum well (QW) structure is not only important for the fundamental understanding of quantum transport but also for the great potential to generate advanced functionalities of spintronic devices. However, it remains challenging to engineer such a structure due to the short electron phase coherence length in metallic QW system. Here, we demonstrate the successful fabrication of double-QW structure in a single fully epitaxial magnetic tunnel junction (MTJ) heterostructure, where two Fe QW layers are sandwiched between three MgAlO x tunnel barriers. We show clear evidence of the coherent resonant tunneling through the discrete QW states in the two QWs. The coherent resonant tunneling condition is fulfilled only when the middle barrier between the two QWs is thin enough and available QW states are present simultaneously in both QWs under a certain bias. Compared to the single QW structure, the resonant tunneling in double-QW MTJ produces strong conductivity oscillations with much narrower peak width (about half) owing to the enhanced energy filtering effect. This study presents a comprehensive understanding of the resonant tunneling mechanism in MTJ with multiple QWs, which is essential for future development of new spintronic devices operating in the quantum tunneling regime.

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution.

Magnetic tunnel junctions (MTJs) capable of electrical read and write operations have emerged as a canonical building block for nonvolatile memory and logic. However, the cause of the widespread device properties found experimentally in various MTJ stacks, including tunneling magnetoresistance (TMR), perpendicular magnetic anisotropy (PMA), and voltage-controlled magnetic anisotropy (VCMA), remains elusive. Here, using high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy, we found that the MTJ crystallization quality, boron diffusion out of the CoFeB fixed layer, and minimal oxidation of the fixed layer correlate with the TMR. As with the CoFeB free layer, seed layer diffusion into the free layer/MgO interface is negatively correlated with the interfacial PMA, whereas the metal-oxides concentrations in the free layer correlate with the VCMA. Combined with formation enthalpy and thermal diffusion analysis that can explain the evolution of element distribution from MTJ stack designs and annealing temperatures, we further established a predictive materials design framework to guide the complex design space explorations for high-performance MTJs. On the basis of this framework, we demonstrate experimentally high PMA and VCMA values of 1.74 mJ/m2 and 115 fJ/V·m-1 with annealing stability above 400 °C.

Atomically Thin CrCl3: An In-Plane Layered Antiferromagnetic Insulator.

The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date, the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is, the polarization is in the plane of each layer and has no preferred direction within it. Ligand-field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl3/graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance, we obtain an effective magnetic phase diagram for the bilayer. Our result shows that CrCl3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices.

Investigation of a Magnetic Tunnel Junction Based Sensor for the Detection of Defects in Reinforced Concrete at High Lift-Off.

Magnetic flux leakage (MFL) testing is a method of non-destructive testing (NDT), whereby the material is magnetized, and when a defect is present, the magnetic flux lines break out of the material. The magnitude of the leaked magnetic flux decreases as the lift-off (distance from the material) increases. Therefore, for detection at high lift-off, a sensitive magnetic sensor is required. To increase the output sensitivity, this paper proposes the application of magnetic tunnel junction (MTJ) sensors in a bridge circuit for the NDT of reinforced concrete at high lift-off. MTJ sensors were connected to a full-bridge circuit, where one side of the arm has two MTJ sensors connected in series, and the other contains a resistor and a variable resistor. Their responses towards a bias magnetic field were measured, and, based on the results, the sensor circuit sensitivity was 0.135 mV/mT. Finally, a reinforced concrete specimen with a 1 cm gap in the center was detected. The sensor module (with an amplifier and low pass filter circuits) could determine the gap even at 50 cm, suggesting that MTJ sensors have the potential to detect defects at high lift-off values and have a promising future in the field of NDT.