Toward a 1550 nm InGaAs photoconductive switch for terahertz generation.
Opt Lett
; 34(20): 3068-70, 2009 Oct 15.
Article
en En
| MEDLINE
| ID: mdl-19838228
ABSTRACT
We report a terahertz (THz) photoconductive switch made from a composite of metal ErAs nanoparticles embedded in In(0.53)Ga(0.47)As and coupled to a square spiral antenna. The THz output power was measured in a 77 K cryostat by using a standard hyperhemisphere-lens package, a Golay cell outside the cryostat, and a quasi-optical filter bank for spot frequency spectral measurements. Results indicate an average output power of approximately 12 microW at 22 V bias using 140 mW of optical pump power from a subpicosecond fiber mode-locked laser. In addition, the THz spectra displayed invariance to bias voltage despite operating near impact ionization.
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Arsenicales
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Galio
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Indio
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Luz
Tipo de estudio:
Risk_factors_studies
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En
Año:
2009
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Article