Electrical characterization of composition modulated In(1-x)Sb(x) nanowire field effect transistors by scanning gate microscopy.

Martinez-Morales, A A; Penchev, M; Zhong, J; Jing, X; Singh, K V; Yengel, E; Khan, M I; Ozkan, C S; Ozkan, M.

Martinez-Morales AA; Department of Electrical Engineering, University of California, Riverside, California 92521, USA.

J Nanosci Nanotechnol ; 10(10): 6779-82, 2010 Oct.

Article en En | MEDLINE | ID: mdl-21137796

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Banco de datos: MEDLINE Idioma: En Año: 2010 Tipo del documento: Article

Banco de datos: MEDLINE Idioma: En Año: 2010 Tipo del documento: Article